Buffer circuits with changeable drive characteristic

Claim 3

The method of claim 1, wherein the step of adjusting the input circuit comprises adjusting a composite drive capability of a plurality of transistors within the buffer circuit.

Claim 4

The method of claim 2, wherein the step of adjusting the composite drive capability comprises modifying a composite channel length of the plurality of transistors.

Claim 5

The method of claim 2, wherein the step of adjusting the composite drive capability comprises modifying a composite channel width of the plurality of transistors.

Claim 6

The method of claim 1, further comprising modifying a composite transistor size within the buffer circuit to obtain the gain constant ratio β N /β P for a desired input inversion voltage V INV .

Claim 7

The method of claim 5 wherein the step of modifying the composite transistor size comprises adjusting a composite channel length or width of a plurality of NMOS transistors.

Claim 8

The method of claim 5 wherein the step of modifying the composite transistor size comprises adjusting a composite channel length or width of a plurality of PMOS transistors.

Claim 9

The method of claim 1 wherein a method for forming the buffer circuit for adjusting a gain constant ratio β N /β P to achieve a desired input inversion voltage V INV over processing variations comprises the steps of: forming the one or more NMOS transistors in parallel with each other, wherein each NMOS transistor has a source terminal coupled to a ground potential, a drain terminal coupled to an output terminal, and a gate terminal; forming the one or more PMOS transistors in parallel with each other, wherein each PMOS transistor has a source terminal coupled to a supply potential, a drain terminal coupled to an output terminal, and a gate terminal; coupling the gate terminal of at least one of the one or more NMOS transistors to the input terminal via a first fuse element which can be selectively and independently disconnected and any remaining gate terminals to the input terminal; and coupling the gate terminal of at least one of the one or more PMOS transistors to the input terminal via a second fuse element which can be selectively and independently disconnected and any remaining gate terminals to the input terminal, wherein the one or more NMOS transistors form an effective NMOS transistor having an effective device dimension which is a function of the device dimensions of the NMOS transistors collectively, and wherein the one or more PMOS transistors form an effective PMOS transistor having an effective device dimension which is a function of the device dimensions of the PMOS transistors collectively.

Claim 10

The method of claim 8, further comprising adjusting the gain constant ratio β N /β P by selectively disconnecting one or more first fuses, thereby disconnecting NMOS transistors coupled to the disconnected one or more first fuses and thereby altering the effective device dimension of the NMOS transistors collectively.

Claim 11

The method of claim 8, further comprising adjusting the gain constant ratio β N /β P by selectively disconnecting one or more second fuses, thereby disconnecting PMOS transistors coupled to the disconnected one or more second fuses and thereby altering the effective device dimension of the PMOS transistors collectively.

Claim 12

The method of claim 1 wherein a method for forming the adjustable buffer circuit for adjusting a gain constant ratio β N /β P to achieve a desired input inversion voltage V INV over processing variations comprises the steps of: forming the one or more NMOS transistors, wherein each NMOS transistor has a source terminal coupled to a ground potential, a gate terminal connected to an input terminal, and a drain terminal; forming the one or more PMOS transistors, wherein each PMOS transistor has a source terminal coupled to a supply potential, a gate terminal connected to the input terminal, and a drain terminal; coupling one or more first fuses between an output terminal and at least one or more corresponding drain terminals of the one or more NMOS transistors; coupling one or more second fuses between the output terminal and at least one or more corresponding drain terminals of the one or more PMOS transistors; coupling drain terminals of the NMOS transistors that are not coupled to one or more first fuses to the output terminal; coupling drain terminals of the PMOS transistors that are not coupled to one or more second fuses to the output terminal; wherein the one or more NMOS transistors form an effective NMOS transistor having an effective device dimension which is a function of the device dimensions of the NMOS transistors collectively, and wherein the one or more PMOS transistors form an effective PMOS transistor having an effective device dimension which is a function of the device dimensions of the PMOS transistors collectively.

Claim 13

The method of claim 11, further comprising adjusting the gain constant ratio β N /β P by selectively disconnecting one or more first fuses, thereby disconnecting NMOS transistors coupled to the disconnected one or more first fuses and altering the effective device dimension of the NMOS transistors collectively.

Claim 14

The method of claim 11, further comprising adjusting the gain constant ratio β N /β P by selectively disconnecting one or more second fuses, thereby disconnecting PMOS transistors coupled to the disconnected one or more second fuses and altering the effective device dimension of the PMOS transistors collectively.

Claim 15

The method of claim 1 wherein a method for forming the adjustable buffer circuit for adjusting a gain constant ratio β N /β P to achieve a desired input inversion voltage V INV over processing variations comprises the steps of: forming the one or more NMOS transistors, wherein each NMOS transistor has a source terminal coupled to a ground potential, a gate terminal connected to an input terminal, and a drain terminal; forming the one or more PMOS transistors, wherein each PMOS transistor has a source terminal coupled to a supply potential, a gate terminal connected to the input terminal, and a drain terminal; coupling one or more first fuses between an output terminal and at least one or more corresponding drain terminals of the one or more NMOS transistors; coupling one or more second fuses between the output terminal and at least one or more corresponding drain terminals of the one or more PMOS transistors; coupling drain terminals of the NMOS transistors that are not coupled to one or more first fuses to the output terminal; coupling drain terminals of the PMOS transistors that are not coupled to one or more second fuses to the output terminal; wherein the one or more NMOS transistors form an effective NMOS transistor having an effective device dimension which is a function of the device dimensions of the NMOS transistors collectively, and wherein the one or more PMOS transistors form an effective PMOS transistor having an effective device dimension which is a function of the device dimensions of the PMOS transistors collectively.

Claim 16

The method of claim 14, further comprising adjusting the gain constant ratio β N /β P by selectively disconnecting one or more first fuses, thereby disconnecting NMOS transistors coupled to the disconnected one or more first fuses and thereby altering the effective device dimension of the NMOS transistors collectively.

Claim 17

The method of claim 14, further comprising adjusting the gain constant ratio β N /β P by selectively disconnecting one or more second fuses, thereby disconnecting PMOS transistors coupled to the disconnected one or more second fuses and thereby altering the effective device dimension of the PMOS transistors collectively.

Claim 18

The method of claim 1 wherein a method for forming the adjustable buffer circuit for adjusting a gain constant ratio β N /β P to achieve a desired input inversion voltage V INV over processing variations comprises the steps of: forming the one or more NMOS transistors, wherein each NMOS transistor has a source terminal coupled to a ground potential, a gate terminal connected to an input terminal, and a drain terminal; forming the one or more PMOS transistors, wherein each PMOS transistor has a source terminal coupled to a supply potential, a gate terminal connected to the input terminal, and a drain terminal; coupling the drain terminals of the one or more NMOS transistors together via a plurality of first fuses, wherein a junction between each first fuse connects to a corresponding drain terminal; coupling the drain terminals of the one or more PMOS transistors together via a plurality of second fuses, wherein a junction between each second fuse connects to a corresponding drain terminal; wherein the one or more NMOS transistors form an effective NMOS transistor having an effective device dimension which is a function of the device dimensions of the NMOS transistors collectively, and wherein the one or more PMOS transistors form an effective PMOS transistor having an effective device dimension which is a function of the device dimensions of the PMOS transistors collectively.

Claim 19

The method of claim 17, further comprising adjusting the gain constant ratio β N /β P by selectively disconnecting one of the first fuses, thereby disconnecting one or more NMOS transistors from the effective NMOS transistor, thereby altering the effective device dimension of the NMOS transistors collectively.

Claim 20

The method of claim 17, further comprising adjusting the gain constant ratio β N /β P by selectively disconnecting one of the second fuses, thereby disconnecting one or more PMOS transistors from the effective PMOS transistor, thereby altering the effective device dimension of the PMOS transistors collectively.

Claim 21

The method of claim 1 wherein a method for forming the adjustable buffer circuit for adjusting a gain constant ratio β N /β P to achieve a desired input inversion voltage V INV over processing variations comprises the steps of: forming the one or more NMOS transistors in series, wherein one or more of the NMOS transistors has a first fuse coupled between a drain terminal and a ground potential and a gate terminal connected to an input terminal; forming the one or more PMOS transistors in series, wherein one or more of the PMOS transistors has a second fuse coupled between a drain terminal and a supply potential and a gate terminal connected to an input terminal; wherein the one or more series connected NMOS transistors form an effective NMOS transistor having an effective device dimension which is a function of the device dimensions of the NMOS transistors collectively, and wherein the one or more series connected PMOS transistors form an effective PMOS transistor having an effective device dimension which is a function of the device dimensions of the PMOS transistors collectively.

Claim 22

The method of claim 20, further comprising adjusting the gain constant ratio β N /β P by selectively disconnecting one or more of the first fuses, thereby altering the effective device dimension of the NMOS transistors collectively.

Claim 23

The method of claim 20, further comprising adjusting the gain constant ratio β N /β P by selectively disconnecting one or more of the second fuses, thereby altering the effective device dimension of the PMOS transistors collectively.

Claim 24

The method of claim 1, further comprising a plurality of fuses, wherein at least one of the plurality fuses is connected and/or disconnected to adjust the characteristics of the input circuit.