Oxynitride GTE dielectrics using NH3 gas

Abstract

Abstract A semiconductor manufacturing process in which a single crystal silicon semiconductor substrate is immersed in an oxidation chamber maintained at a first temperature preferably between 400° and 700° C. for a first duration. During the first duration, the oxidation chamber comprises a first ambient gas of N 2 or Argon. Thereafter, the ambient temperature within the oxidation chamber is ramped to a second temperature in the range of approximately 600° to 1100° C. NH 3 is then introduced into the oxidation chamber simultaneously with either NO or N 2 O to form an oxynitride layer. Thereafter, a conductive gate structure is formed on the oxynitride layer and a source/drain impurity distribution is introduced into a pair of source/drain regions laterally displaced on either side of the channel region of the semiconductor substrate. The channel region is aligned with the conductive gate. Preferably, the resistivity of an epitaxial layer of the semiconductor substrate is in the range of approximately 10 to 15 Ω-cm. In one embodiment, the first ambient gas further includes 1 to 10% oxygen and the first temperature is in the range of approximately 600° C. to 700° C. In one embodiment, a thin base oxide film consisting essentially of silicon an oxygen is formed on the upper surface of the semiconductor substrate prior to the oxynitride formation. In one embodiment of the invention, the oxynitride layer is annealed in an N 2 ambient at an anneal temperature in the range of approximately 600° C. to 1100° C. for a duration in the range of 30 seconds to 20 minutes.

Inventors

• 👤 Mark C. Gilmer
• 👤 Mark I. Gardner

Bibliographic Details