Patent US5818076A successfully refreshed from Google Patents.
US5818076A
Expired / Lapsed
US
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Transistor and semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1996-01-30
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Granted: 1998-10-06
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Expires: 2016-01-30
Abstract
Abstract A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic 110! axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.
Inventors
- 👤 Hongyong Zhang
- 👤 Toru Takayama
- 👤 Yasuhiko Takemura
- 👤 Akiharu Miyanaga
- 👤 Hisashi Ohtani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 05:38
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/3466; H10P14/3806
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
58 words
A semiconductor device comprising a polycrystalline semiconductor film formed on a insulating surface, said polycrystalline semiconductor film including at least a source region, a drain region, and a channel region therein and having crystals extending in one direction completely through said channel region, wherein carriers flow through said channel region in the direction in which said crystals extend.
Claim 2
Dependent Claim
58 words
A semiconductor device comprising a polycrystalline semiconductor film formed on a insulating surface, said polycrystalline semiconductor film including at least a source region, a drain region, and a channel region therein and having crystals extending in one direction completely through said channel region, wherein carriers flow through said channel region in the direction in which said crystals extend.
Claim 3
Dependent Claim
13 words
A semiconductor device according to claim 1 wherein said semiconductor film comprises silicon.
Claim 4
Dependent Claim
17 words
A semiconductor device according to claim 1 wherein said crystals extend in parallel with said insulating surface.
Claim 5
Dependent Claim
26 words
A semiconductor device according to claim 1 wherein said semiconductor film has a direction of the crystallographic (111) plane approximately in parallel with said insulating surface.
Claim 6
Dependent Claim
13 words
A semiconductor device according to claim 1 wherein said semiconductor film contains hydrogen.
Claim 7
Dependent Claim
36 words
A semiconductor device according to claim 1 wherein said semiconductor film contains a catalytic metal at a concentration not higher than 5×10 19 atoms/cm 3 , said catalytic metal being capable of promoting crystallization of silicon.
Claim 8
Dependent Claim
21 words
A semiconductor device according to claim 1 wherein said semiconductor film is formed over an insulating substrate having said insulating surface.
Claim 9
Dependent Claim
111 words
A semiconductor device having at least first and second thin film transistors formed on an insulating surface of a substrate, each of said first and second thin film transistors comprising: a crystalline semiconductor film including at least source, drain and channel regions, said semiconductor film comprising at least one silicon crystal extending between said source and drain region completely through said channel region; a gate insulating film formed on said semiconductor film, and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, wherein said at least one silicon crystal has a columnar shape extending in one direction along which carriers of the associated transistor flow.
Claim 10
Dependent Claim
111 words
A semiconductor device having at least first and second thin film transistors formed on an insulating surface of a substrate, each of said first and second thin film transistors comprising: a crystalline semiconductor film including at least source, drain and channel regions, said semiconductor film comprising at least one silicon crystal extending between said source and drain region completely through said channel region; a gate insulating film formed on said semiconductor film, and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, wherein said at least one silicon crystal has a columnar shape extending in one direction along which carriers of the associated transistor flow.
Claim 11
Dependent Claim
13 words
A semiconductor device according to claim 8 wherein said semiconductor film comprises silicon.
Claim 12
Dependent Claim
17 words
A semiconductor device according to claim 8 wherein said crystal extends in parallel with said insulating surface.
Claim 13
Dependent Claim
26 words
A semiconductor device according to claim 8 wherein said semiconductor film has a direction of the crystallographic (111) plane approximately in parallel with said insulating surface.
Claim 14
Dependent Claim
13 words
A semiconductor device according to claim 8 wherein said semiconductor film contains hydrogen.
Claim 15
Dependent Claim
36 words
A semiconductor device according to claim 8 wherein said semiconductor film contains a catalytic metal at a concentration not higher than 5×10 19 atoms/cm 3 , said catalytic metal being capable of promoting crystallization of silicon.
Claim 16
Dependent Claim
14 words
A semiconductor device according to claim 8 wherein said substrate is a glass substrate.
Claim 17
Dependent Claim
58 words
A semiconductor device comprising a crystalline semiconductor film formed on an insulating surface, said crystalline semiconductor film having at least a source region a drain region, and a channel region and comprising a columnar silicon crystal, wherein said columnar silicon crystal extends completely through said channel region in a direction in which carriers flow through said channel region.
Claim 18
Dependent Claim
58 words
A semiconductor device comprising a crystalline semiconductor film formed on an insulating surface, said crystalline semiconductor film having at least a source region a drain region, and a channel region and comprising a columnar silicon crystal, wherein said columnar silicon crystal extends completely through said channel region in a direction in which carriers flow through said channel region.
Claim 19
Dependent Claim
13 words
A semiconductor device according to claim 15 wherein said semiconductor film comprises silicon.
Claim 20
Dependent Claim
16 words
A semiconductor device according to claim 15 wherein said crystal-extends in parallel with said insulating surface.
Claim 21
Dependent Claim
26 words
A semiconductor device according to claim 15 wherein said semiconductor film has a direction of the crystallographic (111) plane approximately in parallel with said insulating surface.
Claim 22
Dependent Claim
13 words
A semiconductor device according to claim 15 wherein said semiconductor film contains hydrogen.
Claim 23
Dependent Claim
36 words
A semiconductor device according to claim 15 wherein said semiconductor film contains a catalytic metal at a concentration not higher than 5×10 19 atoms/cm 3 , said catalytic metal being capable of promoting crystallization of silicon.
Claim 24
Dependent Claim
21 words
A semiconductor device according to claim 15 wherein said semiconductor film is formed over an insulating substrate having said insulating surface.
Claim 25
Dependent Claim
104 words
A semiconductor device having at least first and second thin film transistors formed on an insulating surface of a substrate, each of said first and second thin film transistors comprising: a crystalline semiconductor film including at least source, drain and channel regions, said semiconductor film comprising silicon crystals extending between said source and drain region in a uniform direction; a gate insulating film formed on said semiconductor film; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, wherein a direction in which carriers of the transistors flow through said channel region is coincident with said uniform direction.
Claim 26
Dependent Claim
104 words
A semiconductor device having at least first and second thin film transistors formed on an insulating surface of a substrate, each of said first and second thin film transistors comprising: a crystalline semiconductor film including at least source, drain and channel regions, said semiconductor film comprising silicon crystals extending between said source and drain region in a uniform direction; a gate insulating film formed on said semiconductor film; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, wherein a direction in which carriers of the transistors flow through said channel region is coincident with said uniform direction.
Claim 27
Dependent Claim
13 words
A semiconductor device according to claim 22 wherein said semiconductor film comprises silicon.
Claim 28
Dependent Claim
17 words
A semiconductor device according to claim 22 wherein said cystals extend in parallel with said insulating surface.
Claim 29
Dependent Claim
26 words
A semiconductor device according to claim 22 wherein said semiconductor film has a direction of the crystallographic (111) plane approximately in parallel with said insulating surface.
Claim 30
Dependent Claim
13 words
A semiconductor device according to claim 22 wherein said semiconductor film contains hydrogen.
Claim 31
Dependent Claim
36 words
A semiconductor device according to claim 22 wherein said semiconductor film contains a catalytic metal at a concentration not higher than 5×10 19 atoms/cm 3 , said catalytic metal being capable of promoting, crystallization of silicon.
Claim 32
Dependent Claim
153 words
A semiconductor device having at least one thin film transistor formed on an insulating surface of a substrate, said thin film transistor comprising: a crystalline semiconductor film including at least source, drain and channel regions, said semiconductor film comprising at least one silicon crystal extending between said source and drain region completely through said channel region in parallel with said insulating surface; a gate insulating film formed on said semiconductor film, and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, wherein said at least one silicon crystal has a columnar shape extending in one direction along which carriers of the associated transistor flow. and wherein a direction in which carriers of the transistor flow is in coincidence with a direction in which said at least one silicon crystal extends, and said semiconductor film contains nickel at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 33
Dependent Claim
153 words
A semiconductor device having at least one thin film transistor formed on an insulating surface of a substrate, said thin film transistor comprising: a crystalline semiconductor film including at least source, drain and channel regions, said semiconductor film comprising at least one silicon crystal extending between said source and drain region completely through said channel region in parallel with said insulating surface; a gate insulating film formed on said semiconductor film, and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, wherein said at least one silicon crystal has a columnar shape extending in one direction along which carriers of the associated transistor flow. and wherein a direction in which carriers of the transistor flow is in coincidence with a direction in which said at least one silicon crystal extends, and said semiconductor film contains nickel at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 34
Dependent Claim
114 words
A semiconductor device having at least one thin film transistor formed on an insulating surface of a substrate, said thin film transistor comprising: a crystalline semiconductor film including at least source, drain and channel regions, and comprising at least one silicon crystal; a gate insulating film formed on said semiconductor film, and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, wherein said at least one silicon crystal has a columnar shape extending in one direction along which carriers of the associated transistor flow, and wherein said at least one silicon crystal extends from said source region into said drain region or vice versa through said channel region.
Claim 35
Dependent Claim
114 words
A semiconductor device having at least one thin film transistor formed on an insulating surface of a substrate, said thin film transistor comprising: a crystalline semiconductor film including at least source, drain and channel regions, and comprising at least one silicon crystal; a gate insulating film formed on said semiconductor film, and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, wherein said at least one silicon crystal has a columnar shape extending in one direction along which carriers of the associated transistor flow, and wherein said at least one silicon crystal extends from said source region into said drain region or vice versa through said channel region.
Claim 36
Dependent Claim
24 words
A semiconductor device according to claim 29 wherein said semiconductor film contains nickel at a concentration not higher than 5×10 19 atoms/cm 3 .
Claim 37
Dependent Claim
89 words
A semiconductor device having at least one thin film transistor formed on an insulating surface of a substrate, said thin film transistor comprising: a crystalline semiconductor film including at least source, drain and channel regions, and comprising silicon crystals having a columnar shape; a gate insulating film formed on said semiconductor film, and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, wherein said silicon crystals extend uniformly from said source region into said drain region or vice versa through said channel region.
Claim 38
Dependent Claim
89 words
A semiconductor device having at least one thin film transistor formed on an insulating surface of a substrate, said thin film transistor comprising: a crystalline semiconductor film including at least source, drain and channel regions, and comprising silicon crystals having a columnar shape; a gate insulating film formed on said semiconductor film, and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, wherein said silicon crystals extend uniformly from said source region into said drain region or vice versa through said channel region.
Claim 39
Dependent Claim
24 words
A semiconductor device according to claim 31 wherein said semiconductor film contains nickel at a concentration not higher than 5×10 19 atoms/cm 3 .
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