US5810937A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Using ceramic wafer to protect susceptor during cleaning of a processing chamber
Assignee: Applied Materials Inc
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Filing: 1996-03-13
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Granted: 1998-09-22
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Expires: 2016-03-13
Abstract
Abstract A method and apparatus for protecting a susceptor during a cleaning operation by loading a ceramic wafer onto the susceptor before introducing the cleaning agent into the chamber is provided. In particular, the ceramic wafer is chosen to have a dielectric value sufficient to alter the electromagnetic field of a plasma to spread the plasma away from the susceptor during a cleaning operation, directing more of the plasma towards the walls of the chamber.
Inventors
- 👤 Anand Gupta
- 👤 Srihari Ponnekanti
- 👤 Gana A. Rimple
- 👤 Laxman Murugesh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:54
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32862; H10; H10P; H10P14/00; H10P14/20; B; B08; B08B; B08B7/00; B08B7/0035; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4405
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
72 words
A method for cleaning a semiconductor processing chamber including a susceptor for supporting wafers, comprising steps of: (a) loading a wafer onto said susceptor; (b) flowing a cleaning gas into said chamber; and (c) forming a plasma in said chamber from said cleaning gas, wherein said wafer has a dielectric constant that causes said plasma in said chamber to spread to a greater degree than said plasma would spread without said wafer.
Claim 2
Independent Claim
72 words
A method for cleaning a semiconductor processing chamber including a susceptor for supporting wafers, comprising steps of: (a) loading a wafer onto said susceptor; (b) flowing a cleaning gas into said chamber; and (c) forming a plasma in said chamber from said cleaning gas, wherein said wafer has a dielectric constant that causes said plasma in said chamber to spread to a greater degree than said plasma would spread without said wafer.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said wafer directs said plasma away from said susceptor and toward walls of said chamber.
Claim 4
Dependent Claim
38 words
The method of claim 1 wherein said chamber includes walls lined with a ceramic liner, and further comprising a step of selecting said wafer to have a dielectric constant sufficient to direct said plasma toward said ceramic liner.
Claim 5
Dependent Claim
49 words
The method of claim 3 wherein said chamber further includes a ceramic shield over said susceptor, and further comprising a step of selecting said wafer to have a dielectric constant, which, when combined with a second dielectric constant of said ceramic shield, directs said plasma toward said ceramic liner.
Claim 6
Dependent Claim
16 words
The method of claim 1 wherein said susceptor comprises aluminum and said cleaning gas comprises fluorine.
Claim 7
Dependent Claim
66 words
The method of claim 1 further comprising a step of unloading said wafer from said susceptor wherein a first time period required to clean said chamber, including said step (a) of loading said wafer and said step of unloading said wafer, is less than a second time period, said second time period being required to clean said chamber using a similar cleaning process without said wafer.
Claim 8
Dependent Claim
14 words
The method of claim 1 wherein said wafer comprises Al 2 O 3 .
Claim 9
Dependent Claim
52 words
The method of claim 1 further comprising a step of storing said wafer in a wafer elevator adjacent to said chamber prior to said step (a) of loading said wafer onto said susceptor, and a step of transferring said wafer from said wafer elevator to said processing chamber by a robot arm.
Claim 10
Dependent Claim
68 words
The method of claim 1 further comprising the steps of: setting said susceptor a first distance from a gas discharge head after the step (a) of loading said wafer onto said susceptor; removing said wafer from said processing chamber after said step (c) of forming a plasma; and setting said susceptor a second distance from said gas discharge head, said second distance being less than said first distance.
Claim 11
Independent Claim
88 words
A method for cleaning a chemical vapor deposition chamber including a susceptor for supporting wafers, said method comprising the steps of: selecting a ceramic wafer; loading said ceramic wafer onto said susceptor; flowing a cleaning gas including fluorine into said chamber; and forming a plasma between a gas discharge head and said susceptor and walls of said chamber, wherein said ceramic wafer has a dielectric constant sufficient to spread said plasma in said chamber toward said walls of said chamber to efficiently clean said walls of said chamber.
Claim 12
Independent Claim
88 words
A method for cleaning a chemical vapor deposition chamber including a susceptor for supporting wafers, said method comprising the steps of: selecting a ceramic wafer; loading said ceramic wafer onto said susceptor; flowing a cleaning gas including fluorine into said chamber; and forming a plasma between a gas discharge head and said susceptor and walls of said chamber, wherein said ceramic wafer has a dielectric constant sufficient to spread said plasma in said chamber toward said walls of said chamber to efficiently clean said walls of said chamber.
Claim 13
Dependent Claim
13 words
The method of claim 7 wherein said wafer is about 40 mils thick.
Claim 14
Dependent Claim
17 words
The method of claim 1 wherein said wafer has a diameter essentially equal to a process-wafer diameter.
Claim 15
Dependent Claim
14 words
The method of claim 1 wherein said dielectric constant is less than about 12.
Claim 16
Dependent Claim
40 words
The method of claim 1 wherein said wafer has a selected thickness chosen according to whether said chamber is lined or unlined with a ceramic liner, said selected thickness being greater for a lined chamber than for an unlined chamber.
Claim 17
Dependent Claim
40 words
The method of claim 10 wherein said wafer has a selected thickness chosen according to whether said chamber is lined or unlined with a ceramic liner, said selected thickness being greater for a lined chamber than for an unlined chamber.
References Cited (Backward Citations)
US4786352A
Cited
US5024748A
Cited
US5098245A
Cited
US5041311A
Cited
US5304248A
Cited
JPH04312248A
Cited
US5269881A
Cited
US5240555A
Cited
US5366585A
Cited
US5405491A
Cited
US5558717A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-21 | 2002-03-23 | 2002-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-21 | 2006-03-23 | 2006-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-21 | 2010-03-23 | 2010-09-22 | $7700.00 | Window Closed / Lapsed |