US5024748A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave plasma processing apparatus
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1990-01-22
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Granted: 1991-06-18
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Expires: 2010-01-22
Abstract
Abstract A microwave plasma processing apparatus used for etching or ashing processes of a semiconductor substrate, comprising a plasma generation chamber, into which a reactive gas and microwave power are introduced, a reaction chamber in which the substrate is disposed for processing, and a plasma shield plate separating the reaction chamber from the plasma generation chamber, the plasma shield plate being of electrically conductive material and having at least a hole for flowing the plasma into the reaction chamber and forming a portion of the plasma generation chamber. The microwave plasma processing apparatus of the invention further comprises a cover member disposed on a surface of the plasma shield plate facing the plasma generation chamber and made of inactive material with active species included in the plasma such as quartz and alumina ceramic.
Inventors
- 👤 Shuzo Fujimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:22
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; H01J37/32009; H01J37/32357; H01J37/32623; Y; Y10; Y10S; Y10S156/00; Y10S156/914
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
143 words
A microwave plasma processing apparatus, comprising: a plasma generation chamber for generating plasma by irradiating microwave power to a reactive gas introduced therein, a reaction chamber disposed on a downstream side of the reactive gas for receiving a substrate to be processed therein, a plasma shield plate separating the reaction chamber from the plasma generation chamber, the plasma shield plate being of electrically conductive material and having at least a hole for allowing the plasma to flow into the reaction chamber and forming a portion of the plasma generation chamber, and a separate cover member disposed on the surface of said plasma shield plate facing the plasma generation chamber, said cover member being of a sufficient thickness to prevent cracking or peeling phenomena due to thermal stresses, and made of an inactive material with respect to the active species included in the plasma.
Claim 2
Dependent Claim
143 words
A microwave plasma processing apparatus, comprising: a plasma generation chamber for generating plasma by irradiating microwave power to a reactive gas introduced therein, a reaction chamber disposed on a downstream side of the reactive gas for receiving a substrate to be processed therein, a plasma shield plate separating the reaction chamber from the plasma generation chamber, the plasma shield plate being of electrically conductive material and having at least a hole for allowing the plasma to flow into the reaction chamber and forming a portion of the plasma generation chamber, and a separate cover member disposed on the surface of said plasma shield plate facing the plasma generation chamber, said cover member being of a sufficient thickness to prevent cracking or peeling phenomena due to thermal stresses, and made of an inactive material with respect to the active species included in the plasma.
Claim 3
Dependent Claim
42 words
A microwave plasma processing apparatus as recited in claim 1, wherein said cover member is of the material with which the active species of the plasma have a smaller recombination coefficient than that with said conductive material of the plasma shield plate.
Claim 4
Dependent Claim
25 words
A microwave plasma processing apparatus as recited in claim 1, wherein said electrically conductive material of the plasma shield plate is a metal comprising aluminum.
Claim 5
Dependent Claim
19 words
A microwave plasma processing apparatus as recited in claim 1, wherein the material of said cover member is quartz.
Claim 6
Dependent Claim
20 words
A microwave plasma processing apparatus as recited in claim 1, wherein the material of said cover member is alumina ceramic.
Claim 7
Dependent Claim
20 words
A microwave plasma processing apparatus as recited in claim 1, wherein said reactive gas to generate the plasma includes oxygen.
Claim 8
Dependent Claim
26 words
A microwave plasma processing apparatus as recited in claim 6, wherein said reactive gas to generate the plasma further includes fluoride containing gas or/and nitrogen gas.
Claim 9
Dependent Claim
71 words
A microwave plasma processing apparatus as recited in claim 1, wherein said reaction chamber is partitioned forming a diffusion chamber located on the bottom side of the plasma shield plate, and the plasma shield plate including said hole forms an upper portion of the diffusion chamber and a diffusion plate forms a lower portion thereof, the diffusion plate having a plurality of another holes facing the substrate in the reaction chamber.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-17 | 1994-12-17 | 1995-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-17 | 1998-12-17 | 1999-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-17 | 2002-12-17 | 2003-06-18 | $7700.00 | Window Closed / Lapsed |