Patent US5800877A successfully refreshed from Google Patents.
US5800877A
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Method for forming a fluorine containing silicon oxide film
Assignee: Semiconductor Process Laboratory Co Ltd
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Filing: 1996-08-09
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Granted: 1998-09-01
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Expires: 2016-08-09
Abstract
Abstract In a method for forming a film by thermal CVD, a fluorine-containing silicon oxide film is formed on a substrate by thermal reaction of a mixed gas while heating the substrate. The mixed gas includes an organic silane having a Si-F bond, an organic silane having no Si-F bond, and ozone.
Inventors
- 👤 Kazuo Maeda
- 👤 Noboru Tokumasu
- 👤 Yoshiaki Yuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:17
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/69215
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
109 words
A method for forming a film on a substrate comprising: providing a mixed gas including an organic silane having a Si-F bond, an organic silane having no Si-F bond and ozone; contacting said mixed gas with the substrate; heating the substrate while in contact with said mixed gas to thermally react said mixed gas and to thereby form a fluorine-containing silicon oxide film on the substrate; discontinuing contact between the substrate and said mixed gas; then contacting said fluorine-containing silicon oxide film with a plasma of at least one of oxygen and nitrogen; and heating said substrate while said fluorine-containing silicon oxide film is in contact with said plasma.
Claim 2
Independent Claim
109 words
A method for forming a film on a substrate comprising: providing a mixed gas including an organic silane having a Si-F bond, an organic silane having no Si-F bond and ozone; contacting said mixed gas with the substrate; heating the substrate while in contact with said mixed gas to thermally react said mixed gas and to thereby form a fluorine-containing silicon oxide film on the substrate; discontinuing contact between the substrate and said mixed gas; then contacting said fluorine-containing silicon oxide film with a plasma of at least one of oxygen and nitrogen; and heating said substrate while said fluorine-containing silicon oxide film is in contact with said plasma.
Claim 3
Dependent Claim
21 words
A method for forming a film according to claim 1, wherein said fluorine-containing silicon oxide film is formed at atmospheric pressure.
Claim 4
Dependent Claim
143 words
A method for forming a film according to claim 1, wherein said organic silane having a Si-F bond is selected from the group consisting of: fluoroalkoxysilanes of the formula SiF n (OR) 4-n , wherein n=1 to 3, R is an alkyl group, an aryl group, or a derivative thereof; fluoroalkylsilanes of the formula SiF n R 4-n , wherein n=1 to 3, R is an alkyl group, an aryl group, or a derivative thereof; chain fluorosiloxanes of the formula R n F 3-n SiO(R k F 2-k SiO) m SiF 3-n R n , wherein n=1 to 2, k=0 to 2, m≧0, R is an alkyl group, an aryl group, or a derivative thereof; and ring fluorosiloxanes of the formula (R k F 2-k SiO) m , wherein k=1, m≧2, R is an alkyl group, an aryl group, or a derivative thereof.
Claim 5
Dependent Claim
143 words
A method for forming a film according to claim 3, wherein said organic silane having no Si-F bond is selected from the group consisting of: alkoxysilanes of the formula SiH n (OR) 4-n , wherein n=1 to 3, R is an alkyl group, an aryl group, or a derivative thereof; alkylsilanes of the formula SiH n R 4-n , wherein n=1 to 3, R is an alkyl group, an aryl group, or a derivative thereof; chain siloxanes of the formula R n H 3-n SiO(R k H 2-k SiO) m SiH 3-n R n , wherein n=1 to 2, k=0 to 2, m≧0, R is an alkyl group, an aryl group, or a derivative thereof; and ring siloxanes of the formula (R k H 2-k SiO) m , wherein k=1, m≧2, R is an alkyl group, an aryl group, or a derivative thereof.
Claim 6
Dependent Claim
143 words
A method for forming a film according to claim 1, wherein said organic silane having no Si-F bond is selected from the group consisting of: alkoxysilanes of the formula SiH n (OR) 4-n , wherein n=1 to 3, R is an alkyl group, an aryl group, or a derivative thereof; alkylsilanes of the formula SiH n R 4-n , wherein n=1 to 3, R is an alkyl group, an aryl group, or a derivative thereof; chain siloxanes of the formula R n H 3-n SiO(R k H 2-k SiO) m SiH 3-n R n , wherein n=1 to 2, k=0 to 2, m≧0, R is an alkyl group, an aryl group, or a derivative thereof; and ring siloxanes of the formula (R k H 2-k SiO) m , wherein k=1, m≧2, R is an alkyl group, an aryl group, or a derivative thereof.
Claim 7
Dependent Claim
17 words
A method for forming a film according to claim 1, wherein said mixed gas additionally includes oxygen.
Claim 8
Dependent Claim
27 words
A method for forming a film according to claim 1, wherein said plasma is formed from O 2 , NO, NO 2 , or N 2 O.
Claim 9
Dependent Claim
34 words
A method for forming a film according to claim 1 wherein said contacting with a plasma is conducted at a temperature higher than the temperature at which the fluorine-containing silicon oxide film is formed.
Claim 10
Dependent Claim
30 words
A method for forming a film according to claim 1, wherein a dielectric constant for said fluorine-containing silicon oxide film is set by adjusting the temperature of said thermal reaction.
Claim 11
Dependent Claim
35 words
A method for forming a film according to claim 1, wherein a dielectric constant for said fluorine-containing silicon oxide film is set by adjusting the flow rate of said organic silane having a Si-F bond.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-08-31 | 2002-03-02 | 2002-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-31 | 2006-03-02 | 2006-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-31 | 2010-03-02 | 2010-09-01 | $7700.00 | Window Closed / Lapsed |