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US5796149A
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Semiconductor memory using different concentration impurity diffused layers
Assignee: Intellectual Ventures I LLC
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Filing: 1995-09-08
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Granted: 1998-08-18
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Expires: 2015-09-08
Abstract
Abstract A semiconductor memory which includes first and second memory cells, wherein the first memory cells include first MOS transistors each having impurity diffused layers provided inside of both of a source and a drain to expanding source and drain regions, the second memory cells include second or third MOS transistors each having an impurity diffused layer provided inside of one of a source and a drain or include fourth MOS transistors each having no impurity diffused layer provided inside of either thereof, as well as a method for fabricating the semiconductor memory. Differences in threshold voltage between the first and second to fourth MOS transistors are utilized as differences in storage status between the first and second memory cells so that data "0" or "1" is stored in each memory cell. There are also provided a semiconductor memory wherein differences between the first to fourth MOS transistors in the drain-source current flowing through the transistors when subjected to application of an identical gate voltage thereto are utilized to store four sorts of data in one memory cell, and provided a method for fabricating the semiconductor memory.
Inventors
- 👤 Fumitaka Sugaya
- 👤 Yasuo Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:42
CPC Classifications
H; H10; H10B; H10B20/00; H10B20/27; H10B20/30; H10B20/38; H10B20/387; H10D; H10D30/00; H10D30/60; H10D30/601; H10D30/603
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
144 words
A semiconductor memory comprising: a first memory cell including a first MOS transistor having a pair of first impurity diffused layers of a second electric conduction type, which have relatively high concentration and are provided within a semiconductor substrate of a first electric conduction type at both sides of a gate electrode, and also having a pair of second impurity diffused layers of the second electric conduction type which have relatively low concentration and are provided within the semiconductor substrate inside said pair of first impurity diffused layers; a second memory cell including a second MOS transistor having said pair of first impurity diffused layers and only one of said pair of second impurity diffused layers; and a third memory cell including a third MOS transistor having said pair of first impurity diffused layers and neither of said pair of second impurity diffused layers.
Claim 2
Dependent Claim
144 words
A semiconductor memory comprising: a first memory cell including a first MOS transistor having a pair of first impurity diffused layers of a second electric conduction type, which have relatively high concentration and are provided within a semiconductor substrate of a first electric conduction type at both sides of a gate electrode, and also having a pair of second impurity diffused layers of the second electric conduction type which have relatively low concentration and are provided within the semiconductor substrate inside said pair of first impurity diffused layers; a second memory cell including a second MOS transistor having said pair of first impurity diffused layers and only one of said pair of second impurity diffused layers; and a third memory cell including a third MOS transistor having said pair of first impurity diffused layers and neither of said pair of second impurity diffused layers.
Claim 3
Dependent Claim
43 words
A semiconductor memory as set forth in claim 1, wherein said first impurity diffused layer has an impurity concentration of 10 20 /cm 3 or more and said second impurity diffused layer has an impurity concentration of 10 19 /cm 3 or less.
Claim 4
Dependent Claim
19 words
A semiconductor memory as set forth in claim 1, wherein said first to third MOS transistors are n-channel transistors.
Claim 5
Dependent Claim
19 words
A semiconductor memory as set forth in claim 1, wherein said first to third MOS transistors are p-channel transistors.
Claim 6
Dependent Claim
55 words
A semiconductor memory as set forth in claim 1, wherein said first impurity diffused layer of said first to third MOS transistors has impurity concentration of 10 20 /cm 3 or more and said second impurity diffused layer of said first to second MOS transistors has impurity concentration of 10 19 /cm 3 or less.
Claim 7
Dependent Claim
36 words
A semiconductor memory as set forth in claim 1, wherein said first MOS transistor represents 2-bit data "11", said second MOS transistor represents 2-bit data "10" or "01", said third MOS transistor represents 2-bit data "00".
Claim 8
Dependent Claim
104 words
A multivalued semiconductor memory comprising: a first transistor having a low concentration impurity diffused layer only in a source side of a channel region; a second transistor having a low concentration impurity diffused layer only in a drain side of a channel region; a third transistor having low concentration impurity diffused layers in source and drain sides of a channel region; and a fourth transistor not having any low concentration impurity diffused layer in either of source and drain sides of a channel region; wherein one of said first to fourth transistors is selected to make up a memory cell which stores 2-bit data.
Claim 9
Dependent Claim
104 words
A multivalued semiconductor memory comprising: a first transistor having a low concentration impurity diffused layer only in a source side of a channel region; a second transistor having a low concentration impurity diffused layer only in a drain side of a channel region; a third transistor having low concentration impurity diffused layers in source and drain sides of a channel region; and a fourth transistor not having any low concentration impurity diffused layer in either of source and drain sides of a channel region; wherein one of said first to fourth transistors is selected to make up a memory cell which stores 2-bit data.
Claim 10
Dependent Claim
28 words
A multivalued semiconductor memory as set forth in claim 7, wherein said low concentration impurity diffused layer has impurity concentration lower than that of a source or drain.
Claim 11
Dependent Claim
19 words
A multivalued semiconductor memory as set forth in claim 7, wherein said first to fourth transistors are n-channel transistors.
Claim 12
Dependent Claim
19 words
A multivalued semiconductor memory as set forth in claim 7, wherein said first to fourth transistors are p-channel transistors.
Claim 13
Dependent Claim
54 words
A multivalued semiconductor memory as set forth in claim 7, wherein said low concentration impurity diffused layer of said first to third transistors has impurity concentration of 10 19 /cm 3 or less and source and drain regions of said first to fourth transistors have impurity concentration of 10 20 /cm 3 or more.
Claim 14
Dependent Claim
40 words
A multivalued semiconductor memory as set forth in claim 7, wherein said first transistor represents 2-bit data "01", said second transistor represents 2-bit data "10", said third transistor represents 2-bit data "11", and said fourth transistor represents 2-bit data "00".
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-08-17 | 2002-02-16 | 2002-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-17 | 2006-02-16 | 2006-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-17 | 2010-02-16 | 2010-08-18 | $7700.00 | Window Closed / Lapsed |