Patent US5792261A successfully refreshed from Google Patents.
US5792261A
Expired / Lapsed
US
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Plasma process apparatus
Assignee: Tokyo Electron Ltd
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Filing: 1996-03-29
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Granted: 1998-08-11
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Expires: 2016-03-29
Abstract
Abstract A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH4 and H2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH4 and H2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.
Inventors
- 👤 Kiichi Hama
- 👤 Jiro Hata
- 👤 Toshiaki Hongoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:18
CPC Classifications
H; H10; H10P; H10P50/00; C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/4401; C23C16/4404; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586; C23C16/46; C23C16/463; C23C16/466; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/3211; H01J37/32431; H01J37/3244; H01J37/32449
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
220 words
An apparatus for processing a process region of a substrate; using a plasma, comprising: a container substantially formed of a conductive material; a partition plate dividing said container into an air-tight process chamber and an air-tight auxiliary chamber, and having a window plate made of dielectric; a main pump exhaust for exhausting and setting said process chamber to a vacuum; a work table arranged in said process chamber and having a support face facing said window plate, said substrate being mounted on said support face, with said process region facing said window plate; a main supply for supplying a process gas between said window plate and said substrate mounted on said support face, at least part of said process gas being transformed into said plasma; an induction electrode, for generating electromagnetic field between (1) said window plate and (2) said substrate mounted on said support face, to induce generation of said plasma, and including a coil arranged in said auxiliary chamber and facing said window plate; a power supply section for applying a high frequency voltage to said coil; an auxiliary exhaust pump for exhausting and setting said auxiliary chamber to a vacuum; and a pressure controller connected to said auxiliary exhaust pump for keeping a pressure difference between pressures in said process and auxiliary chambers at a minimum value.
Claim 2
Independent Claim
220 words
An apparatus for processing a process region of a substrate; using a plasma, comprising: a container substantially formed of a conductive material; a partition plate dividing said container into an air-tight process chamber and an air-tight auxiliary chamber, and having a window plate made of dielectric; a main pump exhaust for exhausting and setting said process chamber to a vacuum; a work table arranged in said process chamber and having a support face facing said window plate, said substrate being mounted on said support face, with said process region facing said window plate; a main supply for supplying a process gas between said window plate and said substrate mounted on said support face, at least part of said process gas being transformed into said plasma; an induction electrode, for generating electromagnetic field between (1) said window plate and (2) said substrate mounted on said support face, to induce generation of said plasma, and including a coil arranged in said auxiliary chamber and facing said window plate; a power supply section for applying a high frequency voltage to said coil; an auxiliary exhaust pump for exhausting and setting said auxiliary chamber to a vacuum; and a pressure controller connected to said auxiliary exhaust pump for keeping a pressure difference between pressures in said process and auxiliary chambers at a minimum value.
Claim 3
Dependent Claim
14 words
The apparatus according to claim 1, further comprising grounding means for grounding said container.
Claim 4
Dependent Claim
17 words
The apparatus according to claim 1, wherein said pressure controller is connected to said main exhaust pump.
Claim 5
Dependent Claim
14 words
The apparatus according to claim 1, further comprising a cooler for cooling said coil.
Claim 6
Dependent Claim
20 words
The apparatus according to claim 1, further comprising an auxiliary supply for supplying an inactive gas into said auxiliary chamber.
Claim 7
Dependent Claim
24 words
The apparatus according to claim 5, wherein said inactive gas supplied into said auxiliary chamber is a coolant, by which said coil is cooled.
Claim 8
Dependent Claim
29 words
The apparatus according to claim 6, wherein said auxiliary supply comprises a shower head arranged above said coil and having a plurality of gas supply holes facing said coil.
Claim 9
Dependent Claim
19 words
The apparatus according to claim 1, further comprising a seat arranged on said window plate and supporting said coil.
Claim 10
Dependent Claim
19 words
The apparatus according to claim 8, wherein a passage through which coolant is circulated is formed in said seat.
Claim 11
Dependent Claim
30 words
The apparatus according to claim 1, further comprising a lower electrode arranged in said work table and a power supply for applying a high frequency potential to said lower electrode.
Claim 12
Dependent Claim
37 words
The apparatus according to claim 10, wherein said apparatus is a plasma CVD apparatus to form a film on said process region of said substrate, said process gas is decomposed to provide a material of said film.
Claim 13
Dependent Claim
53 words
The apparatus according to claim 11, wherein said process gas comprises first and second gases, and said main supply comprises first and second supply members respectively supplying said first and second gases, and wherein said second gas is transformed into said plasma while said first gas is excited and decomposed by said plasma.
Claim 14
Dependent Claim
47 words
The apparatus according to claim 12, wherein said first supply member includes a supply port arranged between said window plate and said support face, and said second supply member includes a supply port arranged between said window plate and said supply port of said first supply member.
Claim 15
Dependent Claim
69 words
The apparatus according to claim 13, wherein said first supply member comprises a first supply head arranged between said window plate and said support face and made of dielectric, and said supply port of said first supply member comprises a plurality of supply holes formed on said first supply member and arranged to uniformly cover the whole of said process region of said substrate mounted on said support face.
Claim 16
Dependent Claim
27 words
The apparatus according to claim 14, wherein said first supply head comprises a lattice formed of a combination of pipe elements through which said first gas flows.
Claim 17
Dependent Claim
67 words
The apparatus according to claim 15, wherein said second supply member comprises a second supply head arranged between said window plate and said first supply head, made of dielectric, and comprising continuous frame formed of a combination of pipe elements through which said second gas flows, and said supply port of said second supply member comprises a plurality of supply holes formed on said second supply member.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-10 | 2002-02-09 | 2002-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-10 | 2006-02-09 | 2006-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-10 | 2010-02-09 | 2010-08-11 | $7700.00 | Window Closed / Lapsed |