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US5494522A
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US
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Plasma process system and method
Assignee: Tokyo Electron Ltd
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Filing: 1994-03-17
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Granted: 1996-02-27
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Expires: 2014-03-17
Abstract
Abstract A plasma process system for producing gas plasma in an air-tight chamber by high frequency power to process a substrate with the gas plasma comprising a lower electrode on which the substrate to be plasma-processed is mounted, an upper electrode arranged above the lower electrode, a plasma generator circuit for generating plasma between the upper and the lower electrode, a power source for supplying high frequency power to the plasma generator circuit, and bias generator for generating negative voltage in the upper or lower electrode when high frequency power is supplied from the power source to the upper or lower electrode, wherein the plasma generator circuit includes transformer for supplying a part of high frequency power, which is supplied from the power source, to the bias generator.
Inventors
- 👤 Shuji Moriya
- 👤 Masahiro Ogasawara
- 👤 Jun Yashiro
- 👤 Yoshifumi Tahara
- 👤 Satoru Kawakami
- 👤 Susumu Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 05:36
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/02; H01J37/18; H01J37/185; C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45568; C23C16/4401; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586; C23C16/50; C23C16/505; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32431; H01J37/3244; H01J37/32697; H01J37/32706; H01J37/32798; H01J37/32853; H01J37/32871; H10; H10P; H10P72/00; H10P72/04; H10P72/0451; H10P72/0466; H01J2237/00; H01J2237/02; H01J2237/022; H01J2237/18; H01J2237/184
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
141 words
A plasma process system comprising: a process chamber in which a gas plasma created under vacuum acts on a substrate; a load lock chamber located adjacent to the process chamber; gate valve means for communicating and shielding the load lock chamber with and from the process chamber; carrier means for carrying the substrate into and out of the load lock chamber; exhaust means for exhausting said load lock chamber to lower the inner pressure of the load lock chamber to a level substantially equal to the inner pressure of the process chamber; and gas introducing means, arranged in an upper portion within the load lock chamber and provided with a porous member, for introducing gas into the load lock chamber through said porous member; wherein a gas is blown substantially uniformly from above onto the substrate surface through said porous member.
Claim 2
Dependent Claim
141 words
A plasma process system comprising: a process chamber in which a gas plasma created under vacuum acts on a substrate; a load lock chamber located adjacent to the process chamber; gate valve means for communicating and shielding the load lock chamber with and from the process chamber; carrier means for carrying the substrate into and out of the load lock chamber; exhaust means for exhausting said load lock chamber to lower the inner pressure of the load lock chamber to a level substantially equal to the inner pressure of the process chamber; and gas introducing means, arranged in an upper portion within the load lock chamber and provided with a porous member, for introducing gas into the load lock chamber through said porous member; wherein a gas is blown substantially uniformly from above onto the substrate surface through said porous member.
Claim 3
Dependent Claim
18 words
The plasma process system according to claim 1, wherein said porous member is made of a ceramic material.
Claim 4
Dependent Claim
17 words
The plasma process system according to claim 1, wherein said porous member is made of a metal.
Claim 5
Dependent Claim
23 words
The plasma process system according to claim 1, wherein said porous member has pores with an average pore diameter of about 0.2 μm.
Claim 6
Dependent Claim
19 words
The plasma process system according to claim 1, wherein said porous member has a porosity of 10 to 50%.
Claim 7
Dependent Claim
28 words
The plasma process system according to claim 1, wherein an exhaust passage communicating with said exhaust means is open in a lower portion of said load lock chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-26 | 1999-08-28 | 2000-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-26 | 2003-08-28 | 2004-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-26 | 2007-08-28 | 2008-02-27 | $7700.00 | Window Closed / Lapsed |