Etching method of gas plasma

Abstract

Abstract PURPOSE: To keep a high etching speed and a high etching speed ratio with an under coating by a method wherein, in a parallel flat plate type gas plasma etching method, a high frequency electric oscillation is used and an article to be processed is arranged at a place approached to a high frequency electrode of a high voltage side. CONSTITUTION: In the parallel flat plate type gas plasma etching method comprising a reaction chamber 1, flat plate like electrodes 2, 3, a vacuum pump 7, a high frequency power source 10, a gas introducing pipe 8 or the like, an SiO 2 coating 5 which is a layer to be etched is formed on an Si base plate 4 and the article 6 to be processed having a photoresist film 27 selectively coated on the surface thereof is arranged and a lower electrode 3 connected to the high voltage side 11 of the power source 10. A CHF 3 gas is introduced from the gas introducing pipe 8 while a gas exhaust speed is controlled and a high frequency electric power is applied by using a high frequency electric power with a frequency of 10MHz or less to carry out the etching. Thereby, while the etching speed of the layer to be etched is held to a practically sufficient level, the etching speed ratio of the layer to be etched and the under coating can be made sufficiently high. COPYRIGHT: (C)1981,JPO&Japio

Inventors

• 👤 Hiroyasu Toyoda
• 👤 Hiroyoshi Komiya
• 👤 Hideaki Itakura

Bibliographic Details