Patent US2439741A successfully refreshed from Google Patents.
US5776557A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a film on a substrate by activating a reactive gas
Assignee: Toshiba Corp
•
Filing: 1996-10-10
•
Granted: 1998-07-07
•
Expires: 2016-10-10
Abstract
Abstract A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure of the deposit species in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
Inventors
- 👤 Haruo Okano
- 👤 Sadahisa Noguchi
- 👤 Makoto Sekine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:55
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/44; C23C16/46; C23C16/463; H10P14/6338; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/694; H10P14/6943; H10P14/69433; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10P14/6684; H10P14/6686; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
166 words
A thin film forming method, comprising the steps of: supporting a substrate in a reaction chamber, said substrate having a trench or unevenness thereon; activating a first reactive gas including oxygen in an activating chamber; introducing said activated first reactive gas including oxygen into said reaction chamber; introducing a second reactive gas into said reaction chamber, said second reactive gas including an organic silicon compound; reacting said activated first reactive gas including oxygen and said second reactive gas in said reaction chamber to form a deposit species comprising Si--O--Si bonds and characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a silicon oxide film on the substrate while retaining a pressure in the reaction chamber higher than the triple point of the phase diagram of the deposit species, and maintaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
Claim 2
Dependent Claim
166 words
A thin film forming method, comprising the steps of: supporting a substrate in a reaction chamber, said substrate having a trench or unevenness thereon; activating a first reactive gas including oxygen in an activating chamber; introducing said activated first reactive gas including oxygen into said reaction chamber; introducing a second reactive gas into said reaction chamber, said second reactive gas including an organic silicon compound; reacting said activated first reactive gas including oxygen and said second reactive gas in said reaction chamber to form a deposit species comprising Si--O--Si bonds and characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a silicon oxide film on the substrate while retaining a pressure in the reaction chamber higher than the triple point of the phase diagram of the deposit species, and maintaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
Claim 3
Dependent Claim
24 words
The thin film forming method of claim 1 wherein said second reactive gas is directly supplied to the reaction chamber in an inactivated state.
Claim 4
Dependent Claim
20 words
The thin film forming method of claim 1 wherein said activated first reactive gas including oxygen includes an oxygen radical.
Claim 5
Dependent Claim
31 words
The thin film forming method of claim 1 wherein said silicon oxide film preferentially accumulates in a bottom portion of said trench or unevenness until said trench or unevenness is filled.
Claim 6
Dependent Claim
15 words
The thin film forming method of claim 1 wherein said substrate is a semiconductor substrate.
Claim 7
Dependent Claim
15 words
The thin film forming method of claim 5 wherein said substrate is a silicon substrate.
Claim 8
Dependent Claim
56 words
The thin film forming method of claim 1 wherein said substrate has an unevenness thereon and comprises a first insulating layer and a wiring pattern, said first insulating layer and wiring pattern defining at least a portion of said unevenness, and said silicon oxide film is formed on said first insulating layer and said wiring pattern.
Claim 9
Dependent Claim
26 words
The thin film forming method of claim 1 wherein the step of activating said first reactive gas including oxygen includes the step of creating electric discharge.
Claim 10
Dependent Claim
26 words
The thin film forming method of claim 1 wherein the step of activating said first reactive gas including oxygen includes the step of generating a plasma.
Claim 11
Dependent Claim
31 words
The thin film forming method of claim 1, wherein the step of activating said first reactive gas including oxygen includes the step of thermally activating said first reactive gas including oxygen.
Claim 12
Dependent Claim
31 words
The thin film forming method of claim 1 wherein the step of activating said first reactive gas including oxygen includes the step of light activating said first reactive gas including oxygen.
Claim 13
Dependent Claim
32 words
The thin film forming method of claim 1 wherein the step of activating said first reactive gas including oxygen includes the step of electron beam activating said first reactive gas including oxygen.
Claim 14
Dependent Claim
27 words
The thin film forming method of claim 11 wherein the step of light activating includes the step of laser beam activating said first reactive gas including oxygen.
Claim 15
Dependent Claim
26 words
The thin film forming method of claim 5 wherein the first or second reactive gas includes an impurity to change the conductivity of the semiconductor substrate.
Claim 16
Dependent Claim
25 words
The thin film forming method of claim 1 wherein the substrate has a trench and the aspect ratio of the trench is one or more.
Claim 17
Dependent Claim
14 words
The thin film forming method of claim 1 wherein the deposit species is heated.
Claim 18
Dependent Claim
15 words
The thin film forming method of claim 16 wherein the deposit species heating is instantaneous.
Claim 19
Dependent Claim
21 words
The thin film forming method of claim 1 wherein the supporting step comprises electrostatically supporting the substrate with a sample holder.
Claim 20
Dependent Claim
18 words
The thin film forming method of claim 1 wherein the substrate and the reactive gases are vibrated relatively.
Claim 21
Dependent Claim
22 words
The thin film forming method of claim 1 wherein the step of maintaining the temperature includes the step of cooling the substrate.
Claim 22
Dependent Claim
22 words
The thin film forming method of claim 1 wherein the step of maintaining the temperature includes the step of heating the substrate.
Claim 23
Dependent Claim
28 words
The thin film forming method of claim 1 wherein said second reactive gas is tetra methyl silane, and said deposit species is one of hexamethyldisiloxane or trimethyl silanol.
Claim 24
Dependent Claim
54 words
The thin film forming method of claim 22 wherein the flow ratio of the first reactive gas to the second reactive gas is 2 or more, the temperature of the substrate is between 20° C. and -100° C., and the total internal pressure of the reaction chamber is maintained at less than 10 Torr.
Claim 25
Dependent Claim
31 words
The thin film forming method of claim 1 wherein the step of activating includes the step of radiating a laser beam with a wave length of approximately 200 nm or less.
Claim 26
Dependent Claim
30 words
The thin film forming method of claim 24 wherein the step of activating includes the step of radiating a laser beam with a power of approximately 330 Joule/cm 2 sec.
Claim 27
Dependent Claim
43 words
The thin film forming method of claim 1 wherein a pressure in the reaction chamber and a temperature of the substrate are set at a condition where a contact angle of a liquefied globule of the deposit species and the substrate becomes acute.
Claim 28
Dependent Claim
32 words
The thin film forming method of claim 1 wherein after the deposit species is formed, the substrate is heated at approximately 300° C. or more with flowing oxygen or an oxygen radical.
References Cited (Backward Citations)
FR2154664A1
Cited
GB1407222A
Cited
US4009680A
Cited
US4743570A
Cited
EP0049586A1
Cited
US4501225A
Cited
US4673592A
Cited
JPS59163831A
Cited
US4675205A
Cited
US4645564A
Cited
US4747928A
Cited
US4800174A
Cited
JPS6358925A
Cited
JPS63125680A
Cited
US5156881A
Cited
US5385763A
Cited
US5458919A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-06 | 2002-01-05 | 2002-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-06 | 2006-01-05 | 2006-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-06 | 2010-01-05 | 2010-07-07 | $7700.00 | Window Closed / Lapsed |