Patent US5773355A successfully refreshed from Google Patents.
US5773355A
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Method for manufacturing semiconductor substrate
Assignee: Canon Inc
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Filing: 1997-05-29
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Granted: 1998-06-30
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Expires: 2017-05-29
Abstract
Abstract A semiconductor substrate includes a semiconductor layer, where the density of an impurity is reduced by out diffusion, provided on an insulating layer. In a method for manufacturing such a semiconductor substrate, a semiconductor substrate including a high-density impurity layer at the side of its surface is bonded to another substrate having an insulating layer. Thereafter, the semiconductor substrate is removed, and the impurity density of the remaining high-density impurity layer is reduced by out diffusion.
Inventors
- 👤 Shunsuke Inoue
- 👤 Mamoru Miyawaki
- 👤 Yoshihiko Fukumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:59
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136277; G02F1/136281; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
72 words
A method for manufacturing a semiconductor substrate consisting essentially of the steps of: forming a semiconductor substrate including an impurity layer with an impurity density at the side of its surface; bonding the impurity layer of the semiconductor substrate and an insulating layer provided on another substrate; removing the semiconductor substrate except the impurity layer; and reducing the impurity density of the remaining impurity layer by out diffusion under a reduced pressure.
Claim 2
Independent Claim
72 words
A method for manufacturing a semiconductor substrate consisting essentially of the steps of: forming a semiconductor substrate including an impurity layer with an impurity density at the side of its surface; bonding the impurity layer of the semiconductor substrate and an insulating layer provided on another substrate; removing the semiconductor substrate except the impurity layer; and reducing the impurity density of the remaining impurity layer by out diffusion under a reduced pressure.
Claim 3
Dependent Claim
20 words
A method according to claim 1, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon oxide.
Claim 4
Dependent Claim
20 words
A method according to claim 1, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon nitride.
Claim 5
Dependent Claim
21 words
A method according to claim 1, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon nitride oxide.
Claim 6
Dependent Claim
31 words
A method according to claim 1, wherein a thin oxide film is formed on the impurity layer before the bonding step, and the bonding is performed after removing the oxide film.
Claim 7
Dependent Claim
30 words
A method according to claim 1, wherein a thin oxide film is formed on the impurity layer before the bonding step, and the bonding is performed via the oxide film.
Claim 8
Independent Claim
83 words
A method for manufacturing a semiconductor substrate consisting essentially of the steps of: forming a semiconductor substrate including an insulating layer in contact with an impurity layer with an impurity density at the side of its surface; bonding the surface of the insulating layer of the semiconductor substrate and a surface of another substrate; removing the semiconductor substrate except the impurity layer and the insulating layer; and reducing the impurity density of the remaining impurity layer by out diffusion under a reduced pressure.
Claim 9
Independent Claim
83 words
A method for manufacturing a semiconductor substrate consisting essentially of the steps of: forming a semiconductor substrate including an insulating layer in contact with an impurity layer with an impurity density at the side of its surface; bonding the surface of the insulating layer of the semiconductor substrate and a surface of another substrate; removing the semiconductor substrate except the impurity layer and the insulating layer; and reducing the impurity density of the remaining impurity layer by out diffusion under a reduced pressure.
Claim 10
Dependent Claim
20 words
A method according to claim 7, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon oxide.
Claim 11
Dependent Claim
20 words
A method according to claim 7, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon nitride.
Claim 12
Dependent Claim
21 words
A method according to claim 7, wherein the semi-conductor substrate comprises silicon, and wherein the insulating layer comprises silicon nitride oxide.
References Cited (Backward Citations)
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US4939101A
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US5098861A
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US5453394A
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US5213986A
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US5234535A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-29 | 2001-12-29 | 2002-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-29 | 2005-12-29 | 2006-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-29 | 2009-12-29 | 2010-06-30 | $7700.00 | Window Closed / Lapsed |