US5767574A
Expired / Lapsed
US
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Semiconductor lead frame
Assignee: Haesung DS Co Ltd
•
Filing: 1997-01-31
•
Granted: 1998-06-16
•
Expires: 2017-01-31
Abstract
Abstract A semiconductor lead frame having an improved structure formed of plated layers is provided. The semiconductor lead frame has the structure of multi-plated layers in which a Ni plated layer, a Pd strike plated layer, and a Pd--X alloy plated layer are deposited on a substrate in the described order. In such a multi-plated layer structure, the Pd strike plated layer covers the porous surface of the Ni plated layer and decreases the surface roughness. Since the thickness of the outer Pd--X alloy plated layer can be maintained uniform due to the Pd strike plated layer, corrosion durability and bonding characteristics are enhanced, thus minimizing the generation and progress of cracks.
Inventors
- 👤 Joong-do Kim
- 👤 Young-ho Baek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:21
CPC Classifications
C; C23; C23C; C23C28/00; C23C28/02; C23C28/021; H; H10; H10W; H10W72/00; C23C28/023; C25; C25D; C25D5/00; C25D5/10; C25D5/12; C25D5/60; C25D5/623; H10W70/00; H10W70/40; H10W70/456; H10W70/457; H10W72/071; H10W72/075; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/90; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
47 words
A semiconductor lead frame, comprising: a metal substrate forming a semiconductor lead frame; a Ni alloy plated layer formed on said substrate; a Pd strike plated layer formed on said Ni alloy plated layer; and a Pd--X alloy plated layer formed on said Pd strike plated layer.
Claim 2
Dependent Claim
47 words
A semiconductor lead frame, comprising: a metal substrate forming a semiconductor lead frame; a Ni alloy plated layer formed on said substrate; a Pd strike plated layer formed on said Ni alloy plated layer; and a Pd--X alloy plated layer formed on said Pd strike plated layer.
Claim 3
Dependent Claim
23 words
A semiconductor lead frame as claimed in claim 1, wherein said substrate is formed of one of Cu, Cu alloy, and Ni alloy.
Claim 4
Dependent Claim
23 words
A semiconductor lead frame as claimed in claim 1, wherein said substrate is formed to have a thickness of 0.1 to 3.0 mm.
Claim 5
Dependent Claim
23 words
A semiconductor lead frame as claimed in claim 2, wherein said substrate is formed to have a thickness of 0.1 to 3.0 mm.
Claim 6
Dependent Claim
33 words
A semiconductor lead frame as claimed in claim 1, wherein said Pd--X alloy layer is formed of Pd as a main component and one of Au, Co, W, Ag, Ti, Mo, and Sn.
Claim 7
Dependent Claim
26 words
A semiconductor lead frame as claimed in claim 1, wherein said Pd--X alloy plated layer is formed to have a thickness of 0.1 to 2.0 μm.
Claim 8
Dependent Claim
26 words
A semiconductor lead frame as claimed in claim 4, wherein said Pd--X alloy plated layer is formed to have a thickness of 0.1 to 2.0 μm.
Claim 9
Dependent Claim
26 words
A semiconductor lead frame as claimed in claim 1, wherein said Ni alloy plated layer is formed to have a thickness of 0.1 to 2.0 μm.
Claim 10
Dependent Claim
26 words
A semiconductor lead frame as claimed in claim 1, wherein said Pd strike plated layer is formed to have a thickness of 0.005 to 0.05 μm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |