Lead frame for semiconductor device
Abstract
Abstract The present invention relates to a lead frame for the formation of a frame structure of an integrated circuit, more particularly, to a lead frame, for a semiconductor device, having a structure possessing excellent bondability, solder wettability, and Ag paste adhesion. A lead frame for a semiconductor device comprises a lead frame substrate; a first intermediate layer, of a Ni plating or a Ni alloy plating, provided on the lead frame substrate; a second intermediate layer, of a Ag plating or a Ag alloy plating, provided on the first intermediate layer; and an outermost layer, of a Pd plating or a Pd alloy plating, provided on the second intermediate layer, wherein the Ag alloy constituting the second intermediat layer is at least one alloy selected from Ag-Co, Ag-Fe, Ag-Pd, Ag-Au, and Ag-Pt.
Inventors
- 👤 Seiichi Serizawa
Bibliographic Details
Claims Analysis
Total Claims: 6References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-03 | 2001-05-05 | 2001-11-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-03 | 2005-05-05 | 2005-11-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-03 | 2009-05-05 | 2009-11-04 | $7700.00 | Window Closed / Lapsed |