US5766972A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making resin encapsulated semiconductor device with bump electrodes
Assignee: Mitsubishi Electric Corp
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Filing: 1995-05-17
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Granted: 1998-06-16
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Expires: 2015-05-17
Abstract
Abstract A semiconductor device includes a semiconductor chip attached to a lead frame with recesses on the rear surface of the semiconductor chip opposite the lead frame. These recesses increase the heat radiation area of the semiconductor chip. In a method of producing a semiconductor device, the height of a cavity between upper and lower dies is smaller than the height of the semiconductor chip including bump electrodes. During a molding process, the bump electrodes contact the upper die or a dam surrounding the bump electrodes so that no thin burrs are produced on the surfaces of the bump electrodes in the molding process.
Inventors
- 👤 Yoshiharu Takahashi
- 👤 Jiro Oseto
- 👤 Teru Hirata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 00:42
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10D; H10D62/00; H10D62/10; H10D62/117; H10W74/01; H10W74/016; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W90/00; H10W90/701; H10W90/721; H10W90/726; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
106 words
A method of producing a semiconductor device comprising: placing a semiconductor chip having a bump electrode and a total thickness including a thickness of said semiconductor chip and a height of said bump electrode in a cavity between a plurality of dies, the cavity having, between said dies, a height smaller than the total thickness of said semiconductor chip and said bump electrode, said semiconductor chip and said bump electrode contacting respective inner surfaces of said dies; and injecting a molten resin into the cavity and curing said resin to encapsulate said semiconductor chip with said bump electrode exposed at and not covered by said resin.
Claim 2
Independent Claim
106 words
A method of producing a semiconductor device comprising: placing a semiconductor chip having a bump electrode and a total thickness including a thickness of said semiconductor chip and a height of said bump electrode in a cavity between a plurality of dies, the cavity having, between said dies, a height smaller than the total thickness of said semiconductor chip and said bump electrode, said semiconductor chip and said bump electrode contacting respective inner surfaces of said dies; and injecting a molten resin into the cavity and curing said resin to encapsulate said semiconductor chip with said bump electrode exposed at and not covered by said resin.
Claim 3
Dependent Claim
25 words
The method of producing a semiconductor device according to claim 1 comprising, after curing said resin, applying an additional bump electrode to said bump electrode.
Claim 4
Independent Claim
122 words
A method of producing a semiconductor device from a semiconductor chip having a continuous dam peripherally surrounding part of a surface of said semiconductor chip and a bump electrode on the surface of said semiconductor chip by placing said semiconductor chip in a cavity between a plurality of dies with said dam in contact with an inner surface of one of said dies, injecting a molten resin into the cavity, said dam preventing said molten resin from reaching part of the cavity, the part of the surface of said semiconductor chip, and said bump electrode, and curing said resin to partially encapsulate said semiconductor chip, the part of the surface and said bump electrode being exposed and not covered by said resin.
Claim 5
Independent Claim
122 words
A method of producing a semiconductor device from a semiconductor chip having a continuous dam peripherally surrounding part of a surface of said semiconductor chip and a bump electrode on the surface of said semiconductor chip by placing said semiconductor chip in a cavity between a plurality of dies with said dam in contact with an inner surface of one of said dies, injecting a molten resin into the cavity, said dam preventing said molten resin from reaching part of the cavity, the part of the surface of said semiconductor chip, and said bump electrode, and curing said resin to partially encapsulate said semiconductor chip, the part of the surface and said bump electrode being exposed and not covered by said resin.
Claim 6
Dependent Claim
45 words
The method of producing a semiconductor device according to claim 3 wherein at least one of said dies has a cut-out forming portion thereby forming a cut-out portion in a part of an outer wall of said resin upon injecting and curing of said resin.
Claim 7
Independent Claim
95 words
A method of producing a semiconductor device from a semiconductor chip having a discontinuous dam peripherally surrounding part of a surface of said semiconductor chip and a bump electrode on the surface of said semiconductor chip by placing said semiconductor chip in a cavity between a plurality of dies with said bump electrode and said dam in contact with an inner surface of one of said dies, injecting a molten resin into the cavity, and curing said resin to encapsulate said semiconductor chip with said bump electrode exposed from and not covered by said resin.
Claim 8
Independent Claim
95 words
A method of producing a semiconductor device from a semiconductor chip having a discontinuous dam peripherally surrounding part of a surface of said semiconductor chip and a bump electrode on the surface of said semiconductor chip by placing said semiconductor chip in a cavity between a plurality of dies with said bump electrode and said dam in contact with an inner surface of one of said dies, injecting a molten resin into the cavity, and curing said resin to encapsulate said semiconductor chip with said bump electrode exposed from and not covered by said resin.
Claim 9
Dependent Claim
45 words
The method of producing a semiconductor device according to claim 5 wherein at least one of said dies has a cut-out forming portion thereby forming a cut-out portion in a part of an outer wall of said resin upon injecting and curing of said resin.
Claim 10
Dependent Claim
25 words
The method of producing a semiconductor device according to claim 5 including, after curing the resin, applying an additional bump electrode on said bump electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |