Method of fabricating LDD spacers in MOS devices with double spacers and device manufactured thereby

Abstract

Abstract In MOSFET devices with a pair of gate conductor stacks formed of a gate oxide layer, a gate electrode layer and a dielectric cap layer, LDD regions are formed by ion implanting lightly doped regions in the surface of the substrate. The LDD regions are self-aligned with the gate conductor stacks. Then form first dielectric spacers of a first dielectric material on the sidewalls of the gate conductor stacks; and form second dielectric spacers of a second dielectric material on the sidewalls of the first dielectric spacers adjacent to the gate conductor stacks thereby forming double sidewall spacers. Form fully doped regions ion implanted into the surface of the substrate self-aligned with the double sidewall spacers. The fully doped regions are self-aligned with the first and second dielectric spacers formed on the gate conductor stacks. The device is covered with a blanket dielectric layer formed by LPCVD from a TEOS source. Above the new dielectric layer, a mask is formed with a contact opening therethrough over a contact region. Then etch away the second dielectric spacers below the contact opening to form self-aligned contact regions reaching down to the substrate between the first dielectric spacers.

Inventors

• 👤 Erik S. Jeng
• 👤 Ing-Ruey Liaw

Bibliographic Details