US5757715A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for initializing and reprogramming a control operation feature of a memory device
Assignee: Round Rock Research LLC
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Filing: 1996-12-02
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Granted: 1998-05-26
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Expires: 2016-12-02
Abstract
Abstract A method for initially programming a synchronous dynamic random access memory (SDRAM) device to have a first control operating option in response to a first command and for reprogramming the SDRAM device to have a second control operating option in response to a second command.
Inventors
- 👤 Brett Williams
- 👤 Scott Schaefer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:56
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4096; G11C11/4072; G11C7/00; G11C7/10; G11C7/1015; G11C7/1045; G11C7/1072
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
100 words
A method for operating a memory device, comprising the following steps: a) providing a first command to the memory device; b) programming a control operation feature of the memory device to have one of a plurality of operating options, said step of programming performed in response to said first command; c) providing a second command to the memory device, wherein said first and second commands are different; and d) reprogramming said control operation feature of the memory device to have a further one of said plurality of operating options, said step of reprogramming performed in response to said second command.
Claim 2
Independent Claim
100 words
A method for operating a memory device, comprising the following steps: a) providing a first command to the memory device; b) programming a control operation feature of the memory device to have one of a plurality of operating options, said step of programming performed in response to said first command; c) providing a second command to the memory device, wherein said first and second commands are different; and d) reprogramming said control operation feature of the memory device to have a further one of said plurality of operating options, said step of reprogramming performed in response to said second command.
Claim 3
Dependent Claim
67 words
The method as specified in claim 1, further comprising the following steps: a) providing a signal on a first input node, said signal determining which of said operating options of said plurality is selected during said step of programming; and b) providing a signal on a second input node, said signal determining which of said operating options of said plurality is selected during said step of reprogramming.
Claim 4
Dependent Claim
106 words
The method as specified in claim 1, further comprising the following steps: a) performing said steps of programming and reprogramming in a programming circuit; b) providing a selection signal on a first input node of said programming circuit, said selection signal determining which of said operating options of said plurality is programmed by said-programming circuit during said step of programming; and c) toggling a value of said selection signal from a first logic state to a second logic state in response to said second command, said step of toggling thereby selecting said further one of said plurality of said operating options during said step of reprogramming.
Claim 5
Dependent Claim
47 words
The method as specified in claim 3, further comprising the following steps: a) providing a third command to said memory device; and b) toggling said selection signal of said programming circuit from said second logic state to said first logic state in response to said third command.
Claim 6
Dependent Claim
38 words
The method as specified in claim 1, further comprising the following steps: a) generating a bank activate signal to activate a memory bank of the memory device; and b) providing said second command during said step of generating.
Claim 7
Dependent Claim
23 words
The method as specified in claim 1, wherein said step of providing said first command comprises applying an external set mode register command.
Claim 8
Dependent Claim
23 words
The method as specified in claim 1, wherein said step of providing said second command comprises applying a column address strobe registration command.
Claim 9
Dependent Claim
21 words
The method as specified in claim 1, wherein said step of providing said second command comprises applying an activate row command.
Claim 10
Dependent Claim
35 words
The method of claim 6 wherein the step of applying the external set mode register command comprises applying active Chip Select, Row Address Strobe, Column Address Strobe, and Write Enable signals to the memory device.
Claim 11
Dependent Claim
107 words
The method of claim 1 wherein the step of programming the control operation feature of the memory device comprises: a) generating an internal set mode register command signal in said memory device in response to said first command; b) receiving an operational code associated with a selected one of the plurality of operating options; c) latching the operational code through a D-flip-flip mode register in the memory device in response to the internal set mode register command signal; and d) programming the control operation feature to have the selected operating option associated with the latched operational code in response to the internal set mode register command signal.
Claim 12
Dependent Claim
49 words
The method of claim 10 wherein the step of generating an internal set mode register command signal comprises generating said signal in response to said first command and in response to an internal control state machine of said memory device indicating the memory device is in an idle state.
Claim 13
Dependent Claim
36 words
The method of claim 10 wherein the step of receiving an operational code comprises receiving an operational code associated with a control operation feature selected from a group comprising burst length, burst type, and read latency.
Claim 14
Dependent Claim
31 words
The method of claim 12 wherein the step of receiving an operational code comprises receiving an operational code specifying a burst length of one of two, four, and eight memory cycles.
Claim 15
Dependent Claim
28 words
The method of claim 12 wherein the step of receiving an operational code comprises receiving an operational code specifying a burst type of one of sequential and interleaved.
Claim 16
Dependent Claim
31 words
The method of claim 12 wherein the step of receiving an operational code comprises receiving an operational code specifying a read latency of one of one, two, and three clock cycles.
Claim 17
Dependent Claim
37 words
The method of claim 7 wherein the step of applying the Column Address Strobe registration command comprises applying active Chip Select and Column Address Strobe signals and an inactive Row Address Strobe signal to the memory device.
Claim 18
Dependent Claim
37 words
The method of claim 8 wherein the step of applying the active row command comprises applying active Chip Select, Row Address Strobe, and Column Address Strobe signals and an inactive Write Enable signal to the memory device.
Claim 19
Dependent Claim
107 words
The method of claim 1 wherein the step of reprogramming the control operation feature of the memory device comprises: a) generating an internal set mode register command signal in said memory device in response to said second command; b) receiving an operational code associated with a selected one of the plurality of operating options; c) latching the operational code through a D-flip-flip mode register in the memory device in response to the internal set mode register command signal; and d) reprogramming the control operation feature to have the selected operating option associated with the latched operational code in response to the internal set mode register command signal.
Claim 20
Dependent Claim
49 words
The method of claim 18 wherein the step of generating an internal set mode register command signal comprises generating said signal in response to said second command and in response to an internal control state machine of said memory device indicating the memory device is in an active state.
Claim 21
Independent Claim
112 words
A method for operating a memory device, comprising the following steps: a) providing a first command to the memory device; b) providing a first signal indicative of a selected operating option to the memory device; c) programming a control operation feature of the memory device in response to said first command to have said selected operating option; d) providing a second signal indicative of another selected operating option to the memory device; e) reprogramming said control operation feature of the memory device in response to said second command to have said other selected operating option; and f) providing a second command to the memory device, said first and second commands being different.
Claim 22
Independent Claim
112 words
A method for operating a memory device, comprising the following steps: a) providing a first command to the memory device; b) providing a first signal indicative of a selected operating option to the memory device; c) programming a control operation feature of the memory device in response to said first command to have said selected operating option; d) providing a second signal indicative of another selected operating option to the memory device; e) reprogramming said control operation feature of the memory device in response to said second command to have said other selected operating option; and f) providing a second command to the memory device, said first and second commands being different.
Claim 23
Independent Claim
112 words
A method for operating a memory device, comprising the following steps: a) providing a first command to the memory device; b) programming a control operation feature of the memory device to have one of a plurality of operating options, said step of programming performed in response to said first command; c) generating a bank activate signal to activate a memory bank of the memory device; d) providing a second command to the memory device during said step of generating; and e) reprogramming said control operation feature of the memory device to have a further one of said plurality of operating options, said step of reprogramming performed in response to said second command.
Claim 24
Independent Claim
112 words
A method for operating a memory device, comprising the following steps: a) providing a first command to the memory device; b) programming a control operation feature of the memory device to have one of a plurality of operating options, said step of programming performed in response to said first command; c) generating a bank activate signal to activate a memory bank of the memory device; d) providing a second command to the memory device during said step of generating; and e) reprogramming said control operation feature of the memory device to have a further one of said plurality of operating options, said step of reprogramming performed in response to said second command.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-25 | 2001-11-24 | 2002-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-25 | 2005-11-24 | 2006-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-25 | 2009-11-24 | 2010-05-26 | $7700.00 | Window Closed / Lapsed |