Self-aligned dual gate MOSFET with an ultranarrow channel

Claim 2

A vertical dual gate field effect transistor comprising: a first region of a first semiconductor material having a first conductivity type forming a source; a second region of a second semiconductor material having a second conductivity type forming a channel extending vertically from said first region to a third region of a third semiconductor material, said second region having first and second opposed sidewalls, said first and second opposed sidewalls being spaced apart substantially uniformly to form said channel having a width in the range from 2.5 to 100 nm, said second semiconductor material being different from said first semiconductor material; said third semiconductor material having said first conductivity type forming a drain, said third semiconductor material being different from said second semiconductor material; and first and second gate regions positioned on said first and second sidewalls respectively of said second region.

Claim 3

The dual gate field effect transistor of claim 1, wherein said first region of semiconductor material comprises silicon.

Claim 4

The dual gate field effect transistor of claim 1, wherein said first region of semiconductor material comprises silicon germanium alloy.

Claim 5

The dual gate field effect transistor of claim 1, wherein said first region of semiconductor material is doped to a concentration of 0.8×10 18 /cm 3 or greater.

Claim 6

The dual gate field effect transistor of claim 1, wherein said second region of semiconductor material comprises silicon.

Claim 7

The dual gate field effect transistor of claim 1, wherein said second region of semiconductor material comprises silicon germanium alloy.

Claim 8

The dual gate field effect transistor of claim 5, wherein said third region of semiconductor material comprises silicon germanium alloy.

Claim 9

The dual gate field effect transistor of claim 6, wherein said third region of semiconductor material comprises silicon.

Claim 10

The dual gate field effect transistor of claim 1, wherein said third region of semiconductor material is doped greater than 0.8×10 18 /cm 3 .

Claim 11

The dual gate field effect transistor of claim 1, wherein a length of said channel extending from said first region to said third region is less than 200 nm.

Claim 12

The dual gate field effect transistor of claim 1, wherein said first and third region of semiconductor material comprise silicon and said second region of semiconductor material comprises silicon germanium alloy.

Claim 13

The dual gate field effect transistor of claim 1, wherein said first and third region of semiconductor material comprise silicon germanium alloy and said second region of semiconductor material comprises silicon.

Claim 14

The dual gate field effect transistor of claim 1, wherein said second region includes a first and second layer of dielectric on each of said first and second sidewalls, respectively, and a layer of polysilicon on each of said first and second layers of dielectric, respectively, said first and second layers of polysilicon forming said first and second gate regions.

Claim 15

The dual gate field effect transistor of claim 1, wherein said first and third semiconductor materials are different.

Claim 16

The dual gate field effect transistor of claim 1, wherein said first and third semiconductor materials are the same.

Claim 17

The dual gate field effect transistor of claim 1, wherein said second region has a volume such that the channel functions as a single electron transistor (SET).

Claim 18

The dual gate field effect transistor of claim 1, wherein said second region has a volume such that the channel functions as a quantum wire.

Claim 19

The dual gate field effect transistor of claim 1, wherein said second region has a volume such that the channel functions as a quantum dot.

Claim 20

The vertical dual gate field effect transistor of claim 1, wherein said first and second gate regions influence same electrons in said channel.

Claim 21

The vertical dual gate field effect transistor of claim 1 further comprising first and second insulating regions formed between said first and second opposed sidewalls and said first and second gate regions, respectively, said first and second insulating regions each having a thickness of approximately 3 nm.

Claim 22

A vertical dual gate field effect transistor comprising: a channel formed of first semiconductor material positioned between a drain and source of second and third semiconductor materials positioned above and below said channel, respectively; said first, second and third semiconductor materials being single crystal and in epitaxial relationship to one another; said first and third semiconductor materials being doped with a first conductivity type, said second semiconductor material being doped with a second conductivity type; said channel having a substantially uniform thickness between first and second sidewalls, said first and second sidewalls being spaced apart to form said channel having a width in the range from 2.5 to 100 nm; first and second gate regions positioned on said first said second sidewalls, respectively; and said first and third semiconductor materials being different from said second semiconductor material to enable selective etching of said second semiconductor material relative to said first and third semiconductor materials.

Claim 23

A vertical dual gate field effect transistor comprising: a channel formed of first semiconductor material positioned between a drain and source of second and third semiconductor materials positioned above and below said channel, respectively; said first, second and third semiconductor materials being single crystal and in epitaxial relationship to one another; said first and third semiconductor materials being doped with a first conductivity type, said second semiconductor material being doped with a second conductivity type; said channel having a substantially uniform thickness between first and second sidewalls, said first and second sidewalls being spaced apart to form said channel having a width in the range from 2.5 to 100 nm; first and second gate regions positioned on said first said second sidewalls, respectively; and said first and third semiconductor materials being different from said second semiconductor material to enable selective etching of said second semiconductor material relative to said first and third semiconductor materials.

Claim 24

The dual gate field effect transistor of claim 21, wherein said first and second gate regions each include metal in contact with said channel forming a Schottky barrier diode with said channel.

Claim 25

The dual gate field effect transistor of claim 21, wherein said first and third semiconductor material comprises GaAs.

Claim 26

The dual gate field effect transistor of claim 21, wherein said second semiconductor material comprises GaAlAs.

Claim 27

The dual gate field effect transistor of claim 23, wherein said second semiconductor material comprises GaAlAs.

Claim 28

The dual gate field effect transistor of claim 24, wherein said first and third semiconductor material comprises GaAs.

Claim 29

The vertical dual gate field effect transistor of claim 21, wherein said first and second gate regions influence same electrons in said channel.

Claim 30

The vertical dual gate field effect transistor of claim 19 further comprising first and second insulating regions formed between said first and second opposed sidewalls and said first and second gate regions, respectively, said first and second insulating regions each having a thickness of approximately 3 nm.