US5324673A
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Method of formation of vertical transistor
Assignee: NXP USA Inc
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Filing: 1992-11-19
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Granted: 1994-06-28
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Expires: 2012-11-19
Abstract
Abstract A method for forming a vertical transistor (10) begins by providing a substrate (12). A conductive layer (16) is formed overlying the substrate (12). A first current electrode (26), a second current electrode (30), and a channel region (28) are each formed via one of either selective growth, epitaxial growth, in-situ doping, and/or ion implantation. A gate electrode or control electrode (34) is formed laterally adjacent the channel region (28). A selective/epitaxial growth step is used to connect the conductive layer (16) to the control electrode (34) and forms a control electrode interconnect which is reliable and free from electrical short circuits to the current electrodes (26 and 30). The transistor (10) may be vertically stacked to form compact inverter circuits.
Inventors
- 👤 Jon T. Fitch
- 👤 Carlos A. Mazure
- 👤 Keith E. Witek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/025; H10D30/031; H10D30/0321; H10D30/60; H10D30/63; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/837; H10D88/00; H10D88/01; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
135 words
A method for forming a transistor comprising the steps of: providing a substrate; forming a conductive layer overlying the substrate; forming a transistor region at least partially overlying the substrate and laterally adjacent the conductive layer, the transistor region having a first current electrode overlying a second current electrode wherein the first current electrode and the second current electrode are separated by a channel region; forming a layer of conductive material overlying both the transistor region and the conductive layer; removing portions of the layer of conductive material to form a conductive spacer wherein the conductive spacer is adjacent the channel region and functions as a sidewall conductive control electrode; and electrically connecting the sidewall conductive control electrode and the underlying conductive layer together to form an electrical interconnect for the sidewall conductive control electrode.
Claim 2
Independent Claim
135 words
A method for forming a transistor comprising the steps of: providing a substrate; forming a conductive layer overlying the substrate; forming a transistor region at least partially overlying the substrate and laterally adjacent the conductive layer, the transistor region having a first current electrode overlying a second current electrode wherein the first current electrode and the second current electrode are separated by a channel region; forming a layer of conductive material overlying both the transistor region and the conductive layer; removing portions of the layer of conductive material to form a conductive spacer wherein the conductive spacer is adjacent the channel region and functions as a sidewall conductive control electrode; and electrically connecting the sidewall conductive control electrode and the underlying conductive layer together to form an electrical interconnect for the sidewall conductive control electrode.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein the step of forming the conductive layer further comprises a step of: forming an etch stop layer over the conductive layer.
Claim 4
Dependent Claim
37 words
The method of claim 1 wherein the step of forming the conductive layer further comprises the steps of: forming a first dielectric layer underlying the conductive layer; and forming a second dielectric layer overlying the conductive layer.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein the step of forming the transistor region further comprises a step of: forming a diffusion within the substrate.
Claim 6
Dependent Claim
48 words
The method of claim 1 wherein the step of forming the transistor region further comprises: using a doping process to dope the first current electrode, second current electrode, and channel region, the doping process selected from a group consisting of: in-situ doping, ion implantation, and thermal dopant diffusion.
Claim 7
Dependent Claim
46 words
The method of claim 1 wherein the step of forming the transistor region further comprises the steps of: laterally overgrowing the second current electrode to form a lateral overgrowth region; and using the lateral overgrowth region to at least partially define the sidewall conductive control electrode.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein the transistor is formed overlying another transistor formed in accordance with claim 1.
Claim 9
Dependent Claim
23 words
The method of claim 1 wherein the step of forming the transistor region further comprises: growing a gate oxide adjacent the channel region.
Claim 10
Dependent Claim
58 words
The method of claim 1 wherein the step of electrically connecting the sidewall conductive control electrode and the underlying conductive layer comprises the step of: exposing both the sidewall conductive control electrode and the conductive layer to a selective growth environment wherein the sidewall conductive control electrode and the conductive layer grow together in the selective growth environment.
Claim 11
Independent Claim
131 words
A method for forming a vertical transistor comprising the steps of: providing a substrate; forming a conductive layer overlying the substrate; forming a dielectric layer having an upper surface overlying the conductive layer; forming an opening through the conductive layer and the dielectric layer to expose a portion of the substrate; forming a first current electrode overlying the substrate and within the opening; forming a channel region overlying the first current electrode and within the opening; forming a second current electrode overlying the channel region, the second current electrode being laterally overgrown over the upper surface of the dielectric layer; removing the dielectric layer; forming a sidewall control electrode adjacent the channel region; and selectively connecting the sidewall control electrode and the conductive layer together to form a control electrode interconnect.
Claim 12
Independent Claim
131 words
A method for forming a vertical transistor comprising the steps of: providing a substrate; forming a conductive layer overlying the substrate; forming a dielectric layer having an upper surface overlying the conductive layer; forming an opening through the conductive layer and the dielectric layer to expose a portion of the substrate; forming a first current electrode overlying the substrate and within the opening; forming a channel region overlying the first current electrode and within the opening; forming a second current electrode overlying the channel region, the second current electrode being laterally overgrown over the upper surface of the dielectric layer; removing the dielectric layer; forming a sidewall control electrode adjacent the channel region; and selectively connecting the sidewall control electrode and the conductive layer together to form a control electrode interconnect.
Claim 13
Dependent Claim
26 words
The method of claim 10 wherein the step of forming the first current electrode further comprises a step of: forming a diffusion region within the substrate.
Claim 14
Dependent Claim
36 words
The method of claim 10 wherein the step of forming the sidewall control electrode further comprises the steps of: using the lateral overgrowth portion of the second current electrode to define the sidewall conductive control electrode.
Claim 15
Dependent Claim
21 words
The method of claim 10 wherein the vertical transistor is formed overlying another vertical transistor formed in accordance with claim 1.
Claim 16
Dependent Claim
24 words
The method of claim 10 wherein the step of removing the dielectric layer further comprises: growing a gate oxide layer adjacent the channel region.
Claim 17
Dependent Claim
44 words
The method of claim 10 wherein the step of forming the sidewall conductive control electrode further comprises the steps of: depositing a substantially conformal conductive layer of material; and etching the substantially conformal conductive layer of material to form said sidewall conductive control electrode.
Claim 18
Independent Claim
161 words
A method for forming a vertical transistor comprising the steps of: providing a substrate; forming a first dielectric layer overlying the substrate; forming a conductive interconnect layer overlying the substrate; forming an etch stop layer overlying the conductive interconnect layer; etching an opening through the first dielectric layer, the conductive interconnect layer, and the etch stop layer to expose a portion of the substrate; forming a first control electrode from the exposed portion of the substrate; forming a channel region overlying the first control electrode; forming a second current electrode overlying the channel region; forming a gate layer overlying the etch stop layer; etching the gate layer selective to the etch stop layer to form a gate sidewall spacer laterally adjacent the channel region; removing a portion of the etch stop layer to expose a portion of the conductive interconnect layer; and connecting the gate sidewall spacer to the exposed portion of the conductive interconnect layer in a selective growth environment.
Claim 19
Independent Claim
161 words
A method for forming a vertical transistor comprising the steps of: providing a substrate; forming a first dielectric layer overlying the substrate; forming a conductive interconnect layer overlying the substrate; forming an etch stop layer overlying the conductive interconnect layer; etching an opening through the first dielectric layer, the conductive interconnect layer, and the etch stop layer to expose a portion of the substrate; forming a first control electrode from the exposed portion of the substrate; forming a channel region overlying the first control electrode; forming a second current electrode overlying the channel region; forming a gate layer overlying the etch stop layer; etching the gate layer selective to the etch stop layer to form a gate sidewall spacer laterally adjacent the channel region; removing a portion of the etch stop layer to expose a portion of the conductive interconnect layer; and connecting the gate sidewall spacer to the exposed portion of the conductive interconnect layer in a selective growth environment.
Claim 20
Dependent Claim
40 words
The method of claim 16 wherein the step of connecting the gate sidewall spacer to the exposed portion of the conductive interconnect layer comprises: selectively growing selective material from the gate sidewall spacer to connect to the conductive interconnect layer.
Claim 21
Dependent Claim
40 words
The method of claim 16 wherein the step of connecting the gate sidewall spacer to the exposed portion of the conductive interconnect layer comprises: selectively growing selective material from the conductive interconnect layer to connect to the gate sidewall spacer.
Claim 22
Dependent Claim
55 words
The method of claim 16 further comprising the steps of: forming a second dielectric layer overlying the etch stop layer; laterally overgrowing the second current electrode to form a lateral overgrowth region over a portion of the second dielectric layer; and using the lateral overgrowth region to define a width of the gate sidewall spacer.
Claim 23
Dependent Claim
19 words
The method of claim 16 wherein the transistor is formed overlying another transistor formed in accordance with claim 21.
Claim 24
Independent Claim
131 words
A method for forming a transistor comprising the steps of: providing a substrate; forming a conductive layer overlying the substrate; forming a transistor region at least partially overlying the substrate and laterally adjacent the conductive layer, the transistor region having a first current electrode overlying a second current electrode wherein the first current electrode and the second current electrode are separated by a channel region; laterally overgrowing the second current electrode to form a lateral overgrowth region; forming a sidewall conductive control electrode adjacent the channel region wherein the lateral overgrowth region is used to at least partially define a geometry of the sidewall conductive control electrode; and selectively connecting the sidewall conductive control electrode and the conductive layer together to form an electrical interconnect for the sidewall conductive control electrode.
Claim 25
Independent Claim
131 words
A method for forming a transistor comprising the steps of: providing a substrate; forming a conductive layer overlying the substrate; forming a transistor region at least partially overlying the substrate and laterally adjacent the conductive layer, the transistor region having a first current electrode overlying a second current electrode wherein the first current electrode and the second current electrode are separated by a channel region; laterally overgrowing the second current electrode to form a lateral overgrowth region; forming a sidewall conductive control electrode adjacent the channel region wherein the lateral overgrowth region is used to at least partially define a geometry of the sidewall conductive control electrode; and selectively connecting the sidewall conductive control electrode and the conductive layer together to form an electrical interconnect for the sidewall conductive control electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-27 | 1997-12-27 | 1998-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-27 | 2001-12-27 | 2002-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-27 | 2005-12-27 | 2006-06-28 | $7700.00 | Window Closed / Lapsed |