Abstract In one form of the invention, a method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a pressure below approximately 1×10 -7 mbar, maintaining the semiconductor surface at a substantially fixed first temperature between approximately 25° C. and 400° C., depositing an epitaxial metal layer on the semiconductor surface, adjusting the semiconductor surface to a substantially fixed second temperature between approximately 25° C. and 200° C., starting a deposition of epitaxial CaF 2 on the first metal layer, ramping the second temperature to a third substantially fixed temperature between 200° C. and 500° C. over a time period, maintaining the third temperature until the epitaxial CaF 2 has deposited to a desired thickness, and stopping the deposition of epitaxial CaF 2 on the first metal layer. Other devices, systems and methods are also disclosed.
A method for the growth of epitaxial CaF 2 and metal on a semiconductor surface, comprising the steps of: forming epitaxial CaF 2 on said semiconductor surface using neutral beam epitaxy while ramping the temperature of said semiconductor surface from approximately 100° C. to approximately 600° C. over a period of approximately five minutes and then holding the temperature of said semiconductor surface at approximately 600° C.; adjusting said semiconductor surface to a second temperature between approximately 25° C. and 400° C.; and forming epitaxial metal on said CaF 2 .
Claim 2
Independent Claim
91 words
A method for the growth of epitaxial CaF 2 and metal on a semiconductor surface, comprising the steps of: forming epitaxial CaF 2 on said semiconductor surface using neutral beam epitaxy while ramping the temperature of said semiconductor surface from approximately 100° C. to approximately 600° C. over a period of approximately five minutes and then holding the temperature of said semiconductor surface at approximately 600° C.; adjusting said semiconductor surface to a second temperature between approximately 25° C. and 400° C.; and forming epitaxial metal on said CaF 2 .
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said epitaxial metal is an elemental metal.
Claim 4
Dependent Claim
11 words
The method of claim 2 wherein said elemental metal is aluminum.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said neutral beam epitaxy is molecular beam epitaxy.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein said second temperature is approximately 300° C.
Claim 7
Dependent Claim
10 words
The method of claim 1 wherein said substrate is silicon(111).