Patent US5751540A successfully refreshed from Google Patents.
US5751540A
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Ferroelectric capacitor with rhodium electrodes
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-03-19
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Granted: 1998-05-12
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Expires: 2016-03-19
Abstract
Abstract A ferroelectric capacitor used as a memory cell in a ferroelectric random access memory (FRAM) is provided. The ferroelectric capacitor includes a substrate, an insulating layer formed on the substrate, a Rh lower electrode provided on the insulating layer, an adhesive layer between the insulating layer and the lower electrode, a ferroelectric layer provided on the lower electrode, and a Rh upper electrode provided on the ferroelectric layer. The Rh used as the electrode material is not affected by diffusion of Si due to its fine structure when compared to a Pt electrode, and has excellent electrical properties due to better electrical conductivity and good heat-transfer properties.
Inventors
- 👤 June-key Lee
- 👤 Il-sub Chung
- 👤 Seshu Babu Desu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:52
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/68; H10D1/692; H10D1/696; H10D1/682
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
54 words
A ferroelectric capacitor comprising: a substrate; an insulating layer formed on said substrate; a Rh lower electrode provided on said insulating layer; a rhodium oxide layer between said insulating layer and said Rh lower electrode; a ferroelectric layer provided on said Rh lower electrode; and a Rh upper electrode provided on said ferroelectric layer.
Claim 2
Dependent Claim
54 words
A ferroelectric capacitor comprising: a substrate; an insulating layer formed on said substrate; a Rh lower electrode provided on said insulating layer; a rhodium oxide layer between said insulating layer and said Rh lower electrode; a ferroelectric layer provided on said Rh lower electrode; and a Rh upper electrode provided on said ferroelectric layer.
Claim 3
Dependent Claim
19 words
A ferroelectric capacitor as claimed in claim 1, wherein the material of said insulating layer is SiO 2 .
Claim 4
Dependent Claim
25 words
A ferroelectric capacitor as claimed in claim 2, wherein said ferroelectric layer is any one selected from the group consisting of PZT, Y1 and BST.
Claim 5
Dependent Claim
16 words
A ferroelectric capacitor as claimed in claim 1, wherein said rhodium oxide is RhO 2 .
Claim 6
Dependent Claim
18 words
A ferroelectric capacitor as claimed in claim 1, wherein said rhodium oxide is Rh 2 O 3 .
Claim 7
Dependent Claim
24 words
A ferroelectric capacitor as claimed in claim 1, wherein said rhodium oxide is a mixture of RhO 2 and Rh 2 O 3 .
Claim 8
Dependent Claim
25 words
A ferroelectric capacitor as claimed in claim 1, wherein said ferroelectric layer is any one selected from the group consisting of PZT, Y1 and BST.
Claim 9
Dependent Claim
29 words
A ferroelectric capacitor as claimed in claim 1, wherein said ferroelectric layer is PZT doped with any one selected from the group consisting of Nb, La, Zn, Ta, Sc.
Claim 10
Dependent Claim
29 words
A ferroelectric capacitor as claimed in claim 1 wherein said ferroelectric layer is PZT doped with any one selected from the group consisting of Nb, Zn, Ta, and Sc.
Claim 11
Dependent Claim
64 words
A ferroelectric capacitor comprising: a substrate; an insulating layer formed on said substrate; a RH lower electrode provided on said substrate; a first rhodium oxide layer between said insulating layer and said Rh lower electrode; a ferroelectric layer provided on said Rh lower electrode; a second rhodium oxide layer formed on said ferroelectric layer; and a Rh upper layer provided on the second layer.
Claim 12
Dependent Claim
64 words
A ferroelectric capacitor comprising: a substrate; an insulating layer formed on said substrate; a RH lower electrode provided on said substrate; a first rhodium oxide layer between said insulating layer and said Rh lower electrode; a ferroelectric layer provided on said Rh lower electrode; a second rhodium oxide layer formed on said ferroelectric layer; and a Rh upper layer provided on the second layer.
Claim 13
Dependent Claim
19 words
A ferroelectric capacitor as claimed in claim 10, wherein the material of said insulating layer is SiO 2 .
Claim 14
Dependent Claim
25 words
A ferroelectric capacitor as claimed in claim 11, wherein said ferroelectric layer is any one selected from the group consisting of PZT, Y1 and BST.
Claim 15
Dependent Claim
25 words
A ferroelectric capacitor as claimed in claim 10, wherein said ferroelectric layer is any one selected from the group consisting of PZT, Y1 and BST.
Claim 16
Dependent Claim
16 words
A ferroelectric capacitor as claimed in claim 10, wherein said rhodium oxide is RhO 2 .
Claim 17
Dependent Claim
18 words
A ferroelectric capacitor as claimed in claim 10, wherein said rhodium oxide is Rh 2 O 3 .
Claim 18
Dependent Claim
24 words
A ferroelectric capacitor as claimed in claim 10, wherein said rhodium oxide is a mixture of RhO 2 and Rh 2 O 3 .
References Cited (Backward Citations)
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