Patent US5742472A successfully refreshed from Google Patents.
US5742472A
Expired / Lapsed
US
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Stacked capacitors for integrated circuit devices and related methods
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-07-03
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Granted: 1998-04-21
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Expires: 2016-07-03
Abstract
Abstract A method for fabricating a capacitor on a substrate includes the steps of forming an insulating layer on the substrate, and forming the first plate electrode on the insulating layer. A first dielectric layer is then formed on the plate electrode, and a first common storage electrode is formed on the first dielectric layer. A contact hole is then formed through the insulating layer, the first plate electrode, the first dielectric layer, and the first common storage electrode, thereby exposing a predetermined portion of the substrate. A first spacer is formed on a sidewall of the contact hole, and a conductive plug is formed in the contact hole extending from the substrate to the first common storage electrode.
Inventors
- 👤 Myoung-Bum Lee
- 👤 Hyeon-deok Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:35
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/682; H10D1/694
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
215 words
A method for fabricating a capacitor on a semiconductor substrate, said method comprising the steps of: forming an insulating layer on the semiconductor substrate; forming a first plate electrode on said insulating layer; forming a first dielectric layer on said plate electrode; forming a first common storage electrode on said first dielectric layer; forming a contact hole through said insulating layer, said first plate electrode, said first dielectric layer, and said first common storage electrode thereby exposing a predetermined portion of the substrate; forming a first spacer on a sidewall of said contact hole; forming a conductive polysilicon plug in said contact hole extending from the substrate to said first common storage electrode; forming a second common storage electrode on said conductive polysilicon plug and on said first common storage electrode wherein said second common storage electrode is formed from polysilicon; patterning said first dielectric layer, said first common storage electrode, and said second common storage electrode to form a mesa structure; forming a second spacer along a sidewall of said mesa structure; forming a second dielectric layer extending over said second common storage electrode and said second spacer to an exposed portion of said first plate electrode; and forming a second plate electrode on said second dielectric layer opposite said second common storage electrode.
Claim 2
Independent Claim
215 words
A method for fabricating a capacitor on a semiconductor substrate, said method comprising the steps of: forming an insulating layer on the semiconductor substrate; forming a first plate electrode on said insulating layer; forming a first dielectric layer on said plate electrode; forming a first common storage electrode on said first dielectric layer; forming a contact hole through said insulating layer, said first plate electrode, said first dielectric layer, and said first common storage electrode thereby exposing a predetermined portion of the substrate; forming a first spacer on a sidewall of said contact hole; forming a conductive polysilicon plug in said contact hole extending from the substrate to said first common storage electrode; forming a second common storage electrode on said conductive polysilicon plug and on said first common storage electrode wherein said second common storage electrode is formed from polysilicon; patterning said first dielectric layer, said first common storage electrode, and said second common storage electrode to form a mesa structure; forming a second spacer along a sidewall of said mesa structure; forming a second dielectric layer extending over said second common storage electrode and said second spacer to an exposed portion of said first plate electrode; and forming a second plate electrode on said second dielectric layer opposite said second common storage electrode.
Claim 3
Dependent Claim
25 words
A method according to claim 1 wherein said first plate electrode and said first common storage electrode each comprise a layer of a noble metal.
Claim 4
Dependent Claim
25 words
A method according to claim 1 further comprising the step of forming a titanium layer between said first plate electrode and said first dielectric layer.
Claim 5
Dependent Claim
22 words
A method according to claim 1 wherein said first dielectric layer comprises a layer of a ferroelectric material having a perovskite structure.
Claim 6
Dependent Claim
23 words
A method according to claim 4 wherein said ferroelectric material is selected from the group consisting of PbZrTiO 3 and BaSrTiO 3 .
Claim 7
Dependent Claim
28 words
A method according to claim 1 further comprising the step of forming a TiN barrier layer between said first common storage electrode and said second common storage electrode.
Claim 8
Dependent Claim
36 words
A method according to claim 1 wherein said second dielectric layer comprises a layer of a material selected from the group consisting of Ta 2 O 5 , Si 3 N 4 , and oxide/nitride/oxide (ONO).
Claim 9
Dependent Claim
198 words
A capacitor on a substrate, said capacitor comprising: a patterned insulating layer on the substrate, said patterned insulating layer defining an opening therethrough; a first patterned plate electrode on said insulating layer, said first patterned plate electrode defining an opening therethrough coincident with said patterned insulator opening; a first dielectric layer on said plate electrode, said first dielectric layer defining an opening therethrough coincident with said patterned insulator opening and said first patterned plate electrode opening; a first common storage electrode on said first dielectric layer, said first common storage electrode defining an opening therethrough coincident with said patterned insulator opening, said first patterned plate electrode opening, and said first dielectric layer opening so that said plurality of openings define a contact hole exposing a portion of said substrate; a first spacer on a sidewall of the contact hole; a conductive plug in said contact hole extending from the substrate to said first common storage electrode; a second common storage electrode on said conductive plug and on said first common storage electrode; a second dielectric layer on said second common storage electrode; and a second plate electrode on said second dielectric layer opposite said second common storage electrode.
Claim 10
Dependent Claim
198 words
A capacitor on a substrate, said capacitor comprising: a patterned insulating layer on the substrate, said patterned insulating layer defining an opening therethrough; a first patterned plate electrode on said insulating layer, said first patterned plate electrode defining an opening therethrough coincident with said patterned insulator opening; a first dielectric layer on said plate electrode, said first dielectric layer defining an opening therethrough coincident with said patterned insulator opening and said first patterned plate electrode opening; a first common storage electrode on said first dielectric layer, said first common storage electrode defining an opening therethrough coincident with said patterned insulator opening, said first patterned plate electrode opening, and said first dielectric layer opening so that said plurality of openings define a contact hole exposing a portion of said substrate; a first spacer on a sidewall of the contact hole; a conductive plug in said contact hole extending from the substrate to said first common storage electrode; a second common storage electrode on said conductive plug and on said first common storage electrode; a second dielectric layer on said second common storage electrode; and a second plate electrode on said second dielectric layer opposite said second common storage electrode.
Claim 11
Dependent Claim
23 words
A capacitor according to claim 8 wherein each of said conductive plug and said second common storage electrode are each formed from polysilicon.
Claim 12
Dependent Claim
28 words
A capacitor according to claim 8 wherein said dielectric layer, said first common storage electrode, and said second common storage electrode together define a three layer mesa structure.
Claim 13
Dependent Claim
18 words
A capacitor according to claim 10 further comprising a second spacer along a sidewall of said mesa structure.
Claim 14
Dependent Claim
31 words
A capacitor according to claim 11 wherein said second dielectric layer extends over said second common storage electrode and said second spacer to an exposed portion of said first plate electrode.
Claim 15
Dependent Claim
34 words
A capacitor according to claim 12 wherein said second dielectric layer comprises a layer of a material selected from the group consisting of TaO 5 , Si 3 N 4 , and oxide/nitride/oxide (ONO).
Claim 16
Dependent Claim
24 words
A capacitor according to claim 8 further comprising a TiN barrier layer between said first common storage electrode and said second common storage electrode.
Claim 17
Dependent Claim
25 words
A capacitor according to claim 8 wherein said first plate electrode and said first common storage electrode each comprise a layer of a noble metal.
Claim 18
Dependent Claim
22 words
A capacitor according to claim 8 wherein said first dielectric layer comprises a layer of a ferroelectric material having a perovskite structure.
Claim 19
Dependent Claim
23 words
A capacitor according to claim 16 wherein said ferroelectric material is selected from the group consisting of PbZrTiO 3 and BaSrTiO 3 .
Claim 20
Dependent Claim
170 words
A capacitor on a substrate, said capacitor comprising: a patterned insulating layer on the substrate, said patterned insulating layer defining an opening therethrough; a first patterned plate electrode on said insulating layer, said first patterned plate electrode defining an opening therethrough coincident with said patterned insulator opening; a first dielectric layer on said plate electrode, said first dielectric layer defining an opening therethrough coincident with said patterned insulator opening and said first patterned plate electrode opening; a first common storage electrode on said first dielectric layer, said first common storage electrode defining an opening therethrough coincident with said patterned insulator opening, said first patterned plate electrode opening, and said first dielectric layer opening so that said plurality of openings define a contact hole exposing a portion of said substrate; a first spacer on a sidewall of the contact hole; a conductive plug in said contact hole extending from the substrate to said first common storage electrode; and a titanium layer between said first plate electrode and said first dielectric layer.
Claim 21
Dependent Claim
170 words
A capacitor on a substrate, said capacitor comprising: a patterned insulating layer on the substrate, said patterned insulating layer defining an opening therethrough; a first patterned plate electrode on said insulating layer, said first patterned plate electrode defining an opening therethrough coincident with said patterned insulator opening; a first dielectric layer on said plate electrode, said first dielectric layer defining an opening therethrough coincident with said patterned insulator opening and said first patterned plate electrode opening; a first common storage electrode on said first dielectric layer, said first common storage electrode defining an opening therethrough coincident with said patterned insulator opening, said first patterned plate electrode opening, and said first dielectric layer opening so that said plurality of openings define a contact hole exposing a portion of said substrate; a first spacer on a sidewall of the contact hole; a conductive plug in said contact hole extending from the substrate to said first common storage electrode; and a titanium layer between said first plate electrode and said first dielectric layer.
Claim 22
Independent Claim
150 words
A method for fabricating a capacitor on a semiconductor substrate, said method comprising the steps of: forming an insulating layer on the semiconductor substrate; forming a first plate electrode on said insulating layer; forming a first dielectric layer on said plate electrode; forming a contact hole through said insulating layer, said first plate electrode, and said first dielectric layer, thereby exposing a predetermined portion of the substrate; forming a first spacer on a sidewall of said contact hole; forming a conductive plug on said first spacer in said contact hole extending from the substrate to a surface of said dielectric layer opposite said substrate; forming a common storage electrode on said first dielectric layer electrically connected to said substrate through said conductive plug; forming a second dielectric layer on said common storage electrode; and forming a second plate electrode on said second dielectric layer opposite said second common storage electrode.
Claim 23
Independent Claim
150 words
A method for fabricating a capacitor on a semiconductor substrate, said method comprising the steps of: forming an insulating layer on the semiconductor substrate; forming a first plate electrode on said insulating layer; forming a first dielectric layer on said plate electrode; forming a contact hole through said insulating layer, said first plate electrode, and said first dielectric layer, thereby exposing a predetermined portion of the substrate; forming a first spacer on a sidewall of said contact hole; forming a conductive plug on said first spacer in said contact hole extending from the substrate to a surface of said dielectric layer opposite said substrate; forming a common storage electrode on said first dielectric layer electrically connected to said substrate through said conductive plug; forming a second dielectric layer on said common storage electrode; and forming a second plate electrode on said second dielectric layer opposite said second common storage electrode.
Claim 24
Dependent Claim
79 words
A method according to claim 19 wherein said step of forming said common storage electrode comprises forming a first common storage electrode on said first dielectric layer, wherein said step of forming said contact hole comprises forming said contact hole through said first common storage electrode, and wherein said step of forming said second dielectric layer is preceded by the step of forming a second common storage electrode on said conductive plug and on said first common storage electrode.
Claim 25
Dependent Claim
55 words
A method according to claim 20 wherein said steps of forming said first dielectric layer, forming said first common storage electrode, and forming said second common storage electrode are followed by the step of patterning said first dielectric layer, said first common storage electrode, and said second common storage electrode to form a mesa structure.
Claim 26
Dependent Claim
27 words
A method according to claim 21 wherein said patterning step is followed by the step of forming a second spacer along a sidewall of said mesa structure.
Claim 27
Dependent Claim
25 words
A method according to claim 19 further comprising the step of forming a titanium layer between said first plate electrode and said first dielectric layer.
Claim 28
Dependent Claim
166 words
A capacitor on a substrate, said capacitor comprising: a patterned insulating layer on the substrate, said patterned insulating layer defining an opening therethrough; a first patterned plate electrode on said insulating layer, said first patterned plate electrode defining an opening therethrough coincident with said patterned insulator opening; a first dielectric layer on said plate electrode, said first dielectric layer defining an opening therethrough coincident with said patterned insulator opening and said first patterned plate electrode opening so that said plurality of openings define a contact hole exposing a portion of said substrate; a first spacer on a sidewall of the contact hole; a conductive plug in said contact hole extending from the substrate to a surface of said dielectric layer opposite said substrate; a first common storage electrode on said first dielectric layer electrically connected to the substrate through said conductive plug; a second dielectric layer on said common storage electrode; and a second plate electrode on said second dielectric layer opposite said common storage electrode.
Claim 29
Dependent Claim
166 words
A capacitor on a substrate, said capacitor comprising: a patterned insulating layer on the substrate, said patterned insulating layer defining an opening therethrough; a first patterned plate electrode on said insulating layer, said first patterned plate electrode defining an opening therethrough coincident with said patterned insulator opening; a first dielectric layer on said plate electrode, said first dielectric layer defining an opening therethrough coincident with said patterned insulator opening and said first patterned plate electrode opening so that said plurality of openings define a contact hole exposing a portion of said substrate; a first spacer on a sidewall of the contact hole; a conductive plug in said contact hole extending from the substrate to a surface of said dielectric layer opposite said substrate; a first common storage electrode on said first dielectric layer electrically connected to the substrate through said conductive plug; a second dielectric layer on said common storage electrode; and a second plate electrode on said second dielectric layer opposite said common storage electrode.
Claim 30
Dependent Claim
57 words
A capacitor according to claim 24 wherein said common storage electrode comprises a first common storage electrode on said first dielectric layer, wherein said first common storage electrode defines an opening therein coincident with said plurality of openings, and further comprising a second common storage electrode on said conductive plug and on said first common storage electrode.
Claim 31
Dependent Claim
29 words
A capacitor according to claim 25 wherein said first dielectric layer, said first common storage electrode, and said second common storage electrode together define a three layer mesa structure.
Claim 32
Dependent Claim
18 words
A capacitor according to claim 26 further comprising a second spacer along a sidewall of said mesa structure.
Claim 33
Dependent Claim
21 words
A capacitor according to claim 24 further comprising a titanium layer between said first plate electrode and said first dielectric layer.
References Cited (Backward Citations)
US5583360A
Cited
US5583068A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-20 | 2001-10-20 | 2002-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-20 | 2005-10-20 | 2006-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-20 | 2009-10-20 | 2010-04-21 | $7700.00 | Window Closed / Lapsed |