Structure and process for mounting semiconductor chip

Claim 2

A semiconductor chip mount structure comprising: a substrate having a base surface on which base side connectors are formed; a semiconductor chip mounted on said base surface of the substrate, said semiconductor chip having chip side connectors on a first surface thereof facing said base surface of the substrate, said chip side connectors being electrically connected to said base side connectors; an insulating resin layer covering said chip side connectors and said base side connectors; a metal layer, including a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, covering said semiconductor chip and said insulating resin layer; and a wetting characteristic improving layer formed along at least a part of a contact surface between said metal layer and said insulating resin layer.

Claim 3

A semiconductor chip mount structure as set forth in claim 1, wherein said metal layer also covers at least a part of said base surface of the substrate and a second wetting characteristic improving layer is formed along at least a part of a second contact surface between said metal layer and said base surface of the substrate.

Claim 4

A semiconductor chip mount structure as set forth in claim 1, wherein said semiconductor chip has a second surface which is exposed outside said insulating resin layer but is covered by said metal layer.

Claim 5

A semiconductor chip mount structure as set forth in claim 3, wherein a heat radiation member is provided on said metal layer adjacent to said second surface of the semiconductor chip.

Claim 6

A semiconductor chip mount structure as set forth in claim 1, wherein said metal layer includes a low melting point metal which melts at a temperature lower than 450°.

Claim 7

A semiconductor chip mount structure as set forth in claim 1, wherein said metal layer includes a low melting point base metal and metal powder, wherein said metal powder is mixed in said base metal and has a melting point higher than said base metal.

Claim 8

A semiconductor chip mount structure as set forth in claim 6, wherein said metal powder is one or a mixture of two or more selected from a group consisting of tungsten (W) powder, molybdenum (Mo) powder, silver (Ag) powder and copper (Cu) powder.

Claim 9

A semiconductor chip mount structure as set forth in claim 1, wherein said metal layer includes a base metal and an inorganic powder, mixed in said base metal, and has a melting point higher than said base metal.

Claim 10

A semiconductor chip mount structure as set forth in claim 8, wherein said inorganic powder is one or more selected form a group consisting of silicon dioxide (SiO 2 ) powder, silicon carbide (SiC) powder, aluminum nitride (AlN) powder, boron nitride (BN) powder and carbon (C) powder.

Claim 11

A semiconductor chip mount structure as set forth in claim 1, wherein said insulating resin layer comprises an insulating inorganic powder.

Claim 12

A semiconductor chip mount structure as set forth in claim 1, wherein said wetting characteristic improving layer is a metal powder or metal foil layer attached onto said insulating resin layer which is in contact with said metal layer.

Claim 13

A semiconductor chip mount structure as set forth in claim 11, wherein said metal powder or metal foil layer includes a metal having a melting point higher than said melting point of the metal layer.

Claim 14

A semiconductor chip mount structure as set forth in claim 2, wherein said second wetting characteristic improving layer is a metal powder or metal foil layer attached onto said base surface of the substrate which is in contact with said metal layer.

Claim 15

A semiconductor chip mount structure as set forth in claim 13, wherein said metal powder or metal foil layer includes a metal having a melting point higher than said melting point of the metal layer.

Claim 16

A semiconductor chip mount structure as set forth in claim 1, wherein said base side connectors formed on said base surface of the substrate comprise at least one ground pattern and said metal layer is electrically connected to said ground pattern.

Claim 17

A semiconductor chip mount structure as set forth in claim 1, wherein said chip side connectors are electrically connected to said base side connectors by connecting terminals mounted on said semiconductor chip.

Claim 18

A semiconductor chip mount structure as set forth in claim 1, wherein said chip side connectors are electrically connected to said base side connectors by a tape automated bonding tape having a conductive pattern.

Claim 19

A semiconductor chip mount structure as set forth in claim 1, wherein a plurality of semiconductor chips is mounted on said base surface of the substrate, and each of said semiconductor chips has respective said chip side connectors which are electrically connected to said base side connectors, said insulating resin layer covers said chip side connectors and said base side connectors, and said metal layer covers said insulating resin layer and said plurality of semiconductor chips.

Claim 20

A semiconductor chip mount structure as set forth in claim 1, wherein said substrate having said base surface on which said base side connectors are formed comprises a flexible film.

Claim 21

A process for mounting a semiconductor chip, having chip side connectors on a first surface thereof, on a substrate having a base surface on which base side connectors are formed, said process comprising the following steps of: mounting said semiconductor chip on said base surface of the substrate, so that said chip side connectors of said semiconductor chip are electrically connected to said base side connectors; filling an insulating resin into a gap between said base surface of the substrate and said first surface of the semiconductor chip to form an insulating resin layer which covers said chip side connectors and said base connectors; forming a wetting characteristic improving layer on at least a part of an exposed surface of said insulating resin layer, a wetting characteristic of said wetting characteristic improving layer with respect to a low melting point metal layer being at least better than that of said insulating resin layer; and forming said metal layer of a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, for covering said semiconductor chip and said insulating resin layer.

Claim 22

A process for mounting a semiconductor chip, having chip side connectors on a first surface thereof, on a substrate having a base surface on which base side connectors are formed, said process comprising the following steps of: mounting said semiconductor chip on said base surface of the substrate, so that said chip side connectors of said semiconductor chip are electrically connected to said base side connectors; filling an insulating resin into a gap between said base surface of the substrate and said first surface of the semiconductor chip to form an insulating resin layer which covers said chip side connectors and said base connectors; forming a wetting characteristic improving layer on at least a part of an exposed surface of said insulating resin layer, a wetting characteristic of said wetting characteristic improving layer with respect to a low melting point metal layer being at least better than that of said insulating resin layer; and forming said metal layer of a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, for covering said semiconductor chip and said insulating resin layer.

Claim 23

A process for mounting a semiconductor chip, having chip side connectors on a first surface thereof, on a substrate having a base surface on which base side connectors are formed, said process comprising the following steps of: mounting said semiconductor chip on said base surface of the substrate, so that said chip side connectors of said semiconductor chip are electrically connected to said base side connectors; filling an insulating resin into a gap between said base surface of the substrate and said first surface of the semiconductor chip to form an insulating resin layer which covers said chip side connectors and said base side connectors; forming first and second wetting characteristic improving layers on at least a part of an exposed surface of said insulating resin layer and on at least a part of said base surface of the substrate, respectively, a wetting characteristic of said first and second wetting characteristic improving layers with respect to first and second low melting point metal layers being at least better than that of said insulating resin layer and said base surface of the substrate, respectively; forming said first and second metal layers of a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, for covering said semiconductor chip, said insulating resin layer and said base surface of the substrate.

Claim 24

A process for mounting a semiconductor chip, having chip side connectors on a first surface thereof, on a substrate having a base surface on which base side connectors are formed, said process comprising the following steps of: mounting said semiconductor chip on said base surface of the substrate, so that said chip side connectors of said semiconductor chip are electrically connected to said base side connectors; filling an insulating resin into a gap between said base surface of the substrate and said first surface of the semiconductor chip to form an insulating resin layer which covers said chip side connectors and said base side connectors; forming first and second wetting characteristic improving layers on at least a part of an exposed surface of said insulating resin layer and on at least a part of said base surface of the substrate, respectively, a wetting characteristic of said first and second wetting characteristic improving layers with respect to first and second low melting point metal layers being at least better than that of said insulating resin layer and said base surface of the substrate, respectively; forming said first and second metal layers of a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, for covering said semiconductor chip, said insulating resin layer and said base surface of the substrate.

Claim 25

A semiconductor chip as set forth in claim 4, wherein the heat radiation member comprises a heat spreader.

Claim 26

A semiconductor chip as set forth in claim 4, wherein the heat radiation member comprises a fin member.

Claim 27

A semiconductor chip as set forth in claim 5, wherein the low melting point metal comprises solder.

Claim 28

A semiconductor chip as set forth in claim 10, wherein said insulating inorganic powder comprises silicon dioxide (SiO 2 ).

Claim 29

A semiconductor chip as set forth in claim 16, wherein said connecting terminals comprise solder bumps.

Claim 30

A semiconductor chip mount structure, comprising: a substrate having a base surface on which a first connector is formed; a semiconductor chip mounted on said base surface, said semiconductor chip having a second connector on a first surface thereof facing said base surface, said second connector being electrically connected to said first connector; an insulating resin layer covering at least a portion of said first and second connectors; a metal layer, including a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, and covering at least a portion of said semiconductor chip and said insulating resin layer; and a wetting characteristic improving layer formed along at least a part of a contact surface between said metal layer and said insulating resin layer.

Claim 31

A semiconductor chip mount structure, comprising: a substrate having a base surface on which a first connector is formed; a semiconductor chip mounted on said base surface, said semiconductor chip having a second connector on a first surface thereof facing said base surface, said second connector being electrically connected to said first connector; an insulating resin layer covering at least a portion of said first and second connectors; a metal layer, including a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, and covering at least a portion of said semiconductor chip and said insulating resin layer; and a wetting characteristic improving layer formed along at least a part of a contact surface between said metal layer and said insulating resin layer.

Claim 32

A process for mounting a semiconductor chip, having a first connector on a first surface thereof, on a substrate having a base surface on which a second connector is formed, said process comprising the steps of: mounting said semiconductor chip on said base surface, so that said first connector is electrically connected to said second connector; filling an insulating resin into a gap formed between said base surface and said first surface of the semiconductor chip to form an insulating resin layer which covers at least a portion of said first and second connectors; forming a wetting characteristic improving layer on at least a portion of said insulating resin layer, a wetting characteristic of said wetting characteristic improving layer with respect to a low melting point metal layer being at least better than that of said insulating resin layer; and forming said metal layer including a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, for covering at least a portion of said semiconductor chip and said insulating resin layer.

Claim 33

A process for mounting a semiconductor chip, having a first connector on a first surface thereof, on a substrate having a base surface on which a second connector is formed, said process comprising the steps of: mounting said semiconductor chip on said base surface, so that said first connector is electrically connected to said second connector; filling an insulating resin into a gap formed between said base surface and said first surface of the semiconductor chip to form an insulating resin layer which covers at least a portion of said first and second connectors; forming a wetting characteristic improving layer on at least a portion of said insulating resin layer, a wetting characteristic of said wetting characteristic improving layer with respect to a low melting point metal layer being at least better than that of said insulating resin layer; and forming said metal layer including a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, for covering at least a portion of said semiconductor chip and said insulating resin layer.

Claim 34

A process for mounting a semiconductor chip, having a first connector on a first surface thereof, on a substrate having a base surface on which a second connector is formed, said process comprising the steps of: mounting said semiconductor chip on said base surface, so that said first connector is electrically connected to said second connector; filling an insulating resin into a gap formed between said base surface and said first surface of the semiconductor chip to form an insulating resin layer which covers at least a portion of said first and second connectors; forming first and second wetting characteristic improving layers on at least a portion of said insulating resin layer and on at least a portion of said base surface, respectively, a wetting characteristic of said first and second wetting characteristic improving layers with respect to first and second low melting point metal layers being at least better than that of said insulating resin layer and said base surface, respectively; forming said first and second metal layers including a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, and covering at least a portion of said semiconductor chip, said insulating resin layer and said base surface.

Claim 35

A process for mounting a semiconductor chip, having a first connector on a first surface thereof, on a substrate having a base surface on which a second connector is formed, said process comprising the steps of: mounting said semiconductor chip on said base surface, so that said first connector is electrically connected to said second connector; filling an insulating resin into a gap formed between said base surface and said first surface of the semiconductor chip to form an insulating resin layer which covers at least a portion of said first and second connectors; forming first and second wetting characteristic improving layers on at least a portion of said insulating resin layer and on at least a portion of said base surface, respectively, a wetting characteristic of said first and second wetting characteristic improving layers with respect to first and second low melting point metal layers being at least better than that of said insulating resin layer and said base surface, respectively; forming said first and second metal layers including a metal having a melting point lower than a temperature at which circuits or other components of said semiconductor chip may be thermally destroyed, and covering at least a portion of said semiconductor chip, said insulating resin layer and said base surface.