Termal shunt stabilization of multiple part heterojunction bipolar transistors

Claim 1

Bipolar transistor apparatus comprising the combination of: a semiconductor substrate member; first semiconductor layer means including both a lowermost sub collector layer and an overlaying collector layer disposed proximate an exposed surface of said substrate member and including a collector layer first doped region of first shape configuration for achieving transistor collector element realization; second semiconductor layer means overlaying said first semiconductor layer means and including a second doped region of second shape configuration and alignment with said first semiconductor layer means first shape configuration region for transistor base element realization; third semiconductor layer means overlaying said second semiconductor layer means and including a third doped region of selected shape configuration and alignment with said second semiconductor layer means shape configuration for transistor emitter element realization; said first, second and third semiconductor layer means comprising a first transistor site in said transistor apparatus; fourth layer means of a rigid electrical insulating material overlaying said third semiconductor layer means for electrically and physically isolating third semiconductor layer means surface area-received portions of said transistor site; thermal conductor means extending through said fourth layer means and thermally connecting with said third semiconductor layer means transistor emitter element for conveying thermal energy from said transistor emitter element and semiconductor regions adjacent said emitter element to a fourth layer means surface region-received thermal node portion of said thermal conductor means; thermal shunting means received over said fourth layer means on an exterior surface of said transistor apparatus and connecting with said thermal conductor means thermal node portions and with an additional thermal node portion of a second transistor site in said transistor apparatus for maintaining said transistor element sites at similar operating temperatures; heat spreader means received on said first layer means sub collector layer in substantial cross sectioned area thermal communication with said sub collector layer and said substrate member underlying said sub collector layer and thermally connected with an extremity of said thermal shunting means for conducting thermal energy received via said thermal conductor means and said thermal shunting means from said third semiconductor layer means transistor emitter element into said substrate member for dissipation.