US5145809A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of gunn diode semiconductor devices
Assignee: MLV EQUITY LLC
•
Filing: 1990-12-04
•
Granted: 1992-09-08
•
Expires: 2010-12-04
Abstract
Abstract An improved method for manufacturing a semiconductor device is described. In the preferred embodiment, a Gunn diode is manufactured from InP active and buffer layers. The buffer layer is deposited on a GaAs substrate using an epitaxial deposition process and the active layer is deposited onto the buffer layer. Electrical connection to the InP layers is made by etching a via through the GaAs substrate and metallizing the walls of the via. After the device has been placed in its final package, the GaAs substrate material is removed. As a result, good thermal and electrical contact is made to the InP active layer, and therefore, a Gunn diode manufactured according to this invention can reliably produced greater output power.
Inventors
- 👤 David K. Walker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 03:16
CPC Classifications
H; H10; H10N; H10N80/00; H10N80/10; H10N80/107; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/64; H10D62/00; H10D62/80; H10D62/85; H10D8/00; H10D8/01; H10D8/043; H10D8/051; H10D8/40; H10D8/60; Y; Y10; Y10S; Y10S148/00; Y10S148/135; Y10S438/00; Y10S438/90
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
132 words
A method of forming a semiconductor device comprising the steps of: applying a first semiconductor material to a first side of a second semiconductor material, the first and the second semiconductor materials having different etch rates with respect to an etchant material; applying masking material to a second side of the second material, the masking material having at least one aperture therein; etching away the second material beneath the aperture in the masking material, to create a via extending through the second material to a surface of the first material; metallizing the second side of the second material, so as to create a metallization layer that extends inwardly along the walls of the via and contacts the surface of the first material; and etching away the second material external to the via.
Claim 2
Independent Claim
132 words
A method of forming a semiconductor device comprising the steps of: applying a first semiconductor material to a first side of a second semiconductor material, the first and the second semiconductor materials having different etch rates with respect to an etchant material; applying masking material to a second side of the second material, the masking material having at least one aperture therein; etching away the second material beneath the aperture in the masking material, to create a via extending through the second material to a surface of the first material; metallizing the second side of the second material, so as to create a metallization layer that extends inwardly along the walls of the via and contacts the surface of the first material; and etching away the second material external to the via.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein the first semiconductor material is InP and the second semiconductor material is GaAs.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein the first semiconductor material comprises an n doped active layer and an n+ doped buffer layer.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein the first semiconductor material is an etch-stop layer.
Claim 6
Dependent Claim
23 words
The method of claim 4 wherein the first semiconductor material is Al x Ga 1-x As and the second semiconductor material is GaAs.
Claim 7
Dependent Claim
15 words
The method of claim 1 wherein the etching step is performed by reactive ion etching.
Claim 8
Dependent Claim
17 words
The method of claim 6 wherein the etching is performed with a gas containing Cl- or F-.
Claim 9
Dependent Claim
17 words
The method of claim 1 further comprising the step of bonding the semiconductor device into a package.
Claim 10
Dependent Claim
13 words
The method of claim 8 wherein the step of bonding is ultrasonic bonding.
Claim 11
Dependent Claim
13 words
The method of claim 8 wherein the step of bonding is thermal bonding.
Claim 12
Dependent Claim
13 words
The method of claim 8 wherein the step of bonding is reflow solder.
Claim 13
Dependent Claim
13 words
The method of claim 8 wherein the step of bonding is compression bonding.
Claim 14
Independent Claim
179 words
A method of forming a Gunn diode, comprising the steps of: applying an n+ doped buffer layer of a first semiconductor material to a first side of a planar substrate of a second semiconductor material of similar crystalline dimensions using an epitaxial deposition technique to create a heterojunction, the substrate and the first semiconductor material having different etch rates with respect to an etchant material; applying an n doped active layer of the first semiconductor material over the buffer layer, using an epitaxial deposition technique; applying a masking material to a second side of the planar substrate, the masking material having at least one aperture therein; etching away the substrate beneath the aperture in the masking material, to create a via extending through the second material to a surface of the buffer layer; metallizing the second side of the substrate, so as to create a first metallization layer on the second side of the substrate that extends inwardly along the walls of the via and contacts the buffer layer; and etching away the substrate material external to the via.
Claim 15
Independent Claim
179 words
A method of forming a Gunn diode, comprising the steps of: applying an n+ doped buffer layer of a first semiconductor material to a first side of a planar substrate of a second semiconductor material of similar crystalline dimensions using an epitaxial deposition technique to create a heterojunction, the substrate and the first semiconductor material having different etch rates with respect to an etchant material; applying an n doped active layer of the first semiconductor material over the buffer layer, using an epitaxial deposition technique; applying a masking material to a second side of the planar substrate, the masking material having at least one aperture therein; etching away the substrate beneath the aperture in the masking material, to create a via extending through the second material to a surface of the buffer layer; metallizing the second side of the substrate, so as to create a first metallization layer on the second side of the substrate that extends inwardly along the walls of the via and contacts the buffer layer; and etching away the substrate material external to the via.
Claim 16
Dependent Claim
22 words
The method of claim 13, further comprising the step of metallizing the active layer, so as to create a second metallization layer.
Claim 17
Dependent Claim
28 words
The method of claim 14 wherein the first semiconductor material of the buffer and active layers is InP and the second semiconductor material of the substrate is GaAs.
Claim 18
Dependent Claim
15 words
The method of claim 13 wherein the etching step is performed by reactive ion etching.
Claim 19
Dependent Claim
17 words
The method of claim 16 wherein the etching is performed with a gas containing Cl- or F-.
Claim 20
Dependent Claim
14 words
The method of claim 13 wherein the first metallization layer is formed from AuGeNi.
Claim 21
Dependent Claim
14 words
The method of claim 13 further comprising the step of removing the masking material.
Claim 22
Dependent Claim
17 words
The method of claim 13 further comprising the step of bonding the Gunn diode into a package.
Claim 23
Dependent Claim
13 words
The method of claim 20 wherein the step of bonding is ultrasonic bonding.
Claim 24
Dependent Claim
13 words
The method of claim 20 wherein the step of bonding is thermal bonding.
Claim 25
Dependent Claim
13 words
The method of claim 20 wherein the step of bonding is compression bonding.
Claim 26
Dependent Claim
13 words
The method of claim 20 wherein the step of bonding is reflow solder.
References Cited (Backward Citations)
US3981073A
Cited
US3963537A
Cited
US3959037A
Cited
US4596070A
Cited
US4832761A
Cited
US4879250A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-08 | 1996-03-09 | 1996-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-08 | 2000-03-09 | 2000-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-08 | 2004-03-09 | 2004-09-08 | $7700.00 | Window Closed / Lapsed |