US3963537A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the production of a semiconductor luminescence diode
Assignee: Siemens AG
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Filing: 1974-08-27
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Granted: 1976-06-15
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Expires: 1994-08-27
Abstract
Abstract A process for producing semiconductor luminescence diodes wherein an epitaxial layer is deposited on a monocrystal composed of a semi-insulating semiconductor material, a portion of the monocrystal at least up to the level of the epitaxial layer is removed to leave a border of monocrystal material and exposed epitaxial layer, and a dopant is diffused into this exposed epitaxial layer and the remaining border of the monocrystal material to produce a pn-junction in the epitaxial layer, and finally suitable electrodes are applied to the thus redoped zone of the epitaxial layer.
Inventors
- 👤 Hermann Kniepkamp
- 👤 Guenter Winstel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:25
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/80; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/051; Y10S148/065; Y10S148/072; Y10S148/135
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
140 words
In the process of producing a semiconductor luminescence diode in which an epitaxial layer is deposited on a monocrystal composed of a semi-insulating semiconductor material and a pn-junction is formed in the epitaxial layer in such a manner that at least a part of the surface of the pn-junction runs parallel to the boundary area between said monocrystal and said epitaxial layer, the combination of said epitaxial layer and said monocrystal providing a light emitting diode, the improvement which comprises removing a portion of said monocrystal at least up to the level of the epitaxial layer to leave a border of monocrystal material, diffusing a dopant into the thus exposed epitaxial layer and the remaining border of monocrystal material to produce said pn-junction in said epitaxial layer, and finally applying a block-free electrode to each side of the resulting pn-junction.
Claim 2
Dependent Claim
140 words
In the process of producing a semiconductor luminescence diode in which an epitaxial layer is deposited on a monocrystal composed of a semi-insulating semiconductor material and a pn-junction is formed in the epitaxial layer in such a manner that at least a part of the surface of the pn-junction runs parallel to the boundary area between said monocrystal and said epitaxial layer, the combination of said epitaxial layer and said monocrystal providing a light emitting diode, the improvement which comprises removing a portion of said monocrystal at least up to the level of the epitaxial layer to leave a border of monocrystal material, diffusing a dopant into the thus exposed epitaxial layer and the remaining border of monocrystal material to produce said pn-junction in said epitaxial layer, and finally applying a block-free electrode to each side of the resulting pn-junction.
Claim 3
Dependent Claim
53 words
The process of claim 1 wherein the monocrystal is composed of gallium arsenide having a doped layer of GaAl-As in which the ratio of Al to Ga varies as a function of the distance from the surface of said monocrystal, and in which the pn-junction is produced by the diffusion of acceptor material.
Claim 4
Dependent Claim
30 words
The process of claim 2 in which the epitaxial layer is deposited in such a manner that the aluminum content decreases with increasing distance from the surface of the monocrystal.
Claim 5
Dependent Claim
46 words
The process of claim 1 in which the epitaxial layer is first doped with an n-type dopant and the pn-junction is formed by diffusing zinc at the surface of the epitaxial layer formed by the partial removal of the monocrystal and the remaining border of monocrystal.
Claim 6
Dependent Claim
34 words
The process of claim 4 in which the zonc doping is carried out to a surface concentration of about 1 × 10 19 per cubic centimeter and a penetration depth of about 2 microns.
Claim 7
Dependent Claim
24 words
The process of claim 4 in which the n-type dopant is present at a concentration of about 2 × 10 18 per cubic centimeter.
Claim 8
Dependent Claim
23 words
The process of claim 1 in which the thickness of the epitaxial layer is in the range from about 100 to 150 microns.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-15 | 1979-12-15 | 1980-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-15 | 1983-12-15 | 1984-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-15 | 1987-12-15 | 1988-06-15 | $7700.00 | Window Closed / Lapsed |