US4879250A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a monolithic interleaved LED/PIN photodetector array
Assignee: Boeing Co
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Filing: 1988-09-29
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Granted: 1989-11-07
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Expires: 2008-09-29
Abstract
Abstract Interleaved arrays of photoelectronic devices are fabricated utilizing one-step epitaxial growth of all active layers and simple planar processing. Exemplary arrays include interleaved LED transmitters and PIN photodiode receivers that operate at the same wavelength on light that enters the PINs and exits the LEDs along opposite but parallel paths and interleaved arrays of LED transmitters that emit light at two different wavelengths.
Inventors
- 👤 Eric Y. Chan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:58
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/05; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F55/00; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H10H29/00; H10H29/10; H10H29/14; H10H29/142; H10W; H10W10/00; H10W10/01; Y; Y10; Y10S; Y10S438/00; Y10S438/956
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
222 words
A process for fabricating an integrated optical device, comprising the steps of: in a single epitaxial growth operation and in succession on a substrate, growing an intrinsic layer, a first confining layer, an active light emitting layer, a second confining layer, and a cap layer; depositing an insulating layer on said cap layer; opening a plurality of first holes through said insulating layer to said cap layer; diffusing a conductivity effecting material through said first holes into said intrinsic layer; opening a plurality of second holes through said insulating layer to said cap layer; forming first and second metal p-contacts on said insulating layer, one of said first metal p-contacts being formed through each of said first holes, one of said second metal p-contacts being formed through each of said second holes; forming metal n-contacts on a side of said substrate that lies opposite said insulating layer, said metal n-contacts being arranged to leave portions of said substrate exposed, one of said exposed portions lying opposite each of said first and second metal p-contacts; etching an isolation groove between each of said first and second metal p-contacts, said grooves extending into said intrinsic layer; and etching windows through said substrate and said intrinsic layer to said first confining layer, one of said windows being etched opposite each of said second metal p-contacts.
Claim 2
Dependent Claim
222 words
A process for fabricating an integrated optical device, comprising the steps of: in a single epitaxial growth operation and in succession on a substrate, growing an intrinsic layer, a first confining layer, an active light emitting layer, a second confining layer, and a cap layer; depositing an insulating layer on said cap layer; opening a plurality of first holes through said insulating layer to said cap layer; diffusing a conductivity effecting material through said first holes into said intrinsic layer; opening a plurality of second holes through said insulating layer to said cap layer; forming first and second metal p-contacts on said insulating layer, one of said first metal p-contacts being formed through each of said first holes, one of said second metal p-contacts being formed through each of said second holes; forming metal n-contacts on a side of said substrate that lies opposite said insulating layer, said metal n-contacts being arranged to leave portions of said substrate exposed, one of said exposed portions lying opposite each of said first and second metal p-contacts; etching an isolation groove between each of said first and second metal p-contacts, said grooves extending into said intrinsic layer; and etching windows through said substrate and said intrinsic layer to said first confining layer, one of said windows being etched opposite each of said second metal p-contacts.
Claim 3
Dependent Claim
46 words
The process of claim 1, wherein said substrate is formed of InP, said intrinsic layer is formed of InGaAs, said first and second confining layers are formed of InP, said active light emitting layer is formed of InGaAsP, and said cap layer if formed of InGaAsP.
Claim 4
Dependent Claim
70 words
The process of claim 1, wherein, before growing the intrinsic layer, a window layer is grown on said substrate and wherein said step of etching windows comprises: etching PIN windows through said substrate to said window layer, one of said PIN windows being etched opposite each of said first metal p-contacts; and etching LED windows through said substrate, said window layer, and said intrinsic layer to said first confining layer.
Claim 5
Dependent Claim
50 words
The process of claim 3, wherein said substrate is formed of GaAs, said window layer if formed of GaAlAs, said intrinsic layer is formed of GaAs, and said first and second confining layers and said active light emitting layer are each formed of Ga 1-x Al x As, where 0<x≦1.
Claim 6
Dependent Claim
38 words
The process of claim 4, wherein: said first and second confining layers are formed of Ga 0 .75 Al 0 .25 As; and said active light emitting layer is formed of Ga 0 .95 Al 0 .05 As.
Claim 7
Dependent Claim
199 words
A process for fabricating an integrated optical device, comprising the steps of: in a single epitaxial growth operation and in succession on a substrate, growing a first confining layer, a first light emitting layer, a second confining layer, a second light emitting layer, a third confining layer, and a cap layer; depositing an insulating layer on said cap layer; opening a plurality of first holes through said insulating layer; diffusing a conductivity effecting material through said first holes into said first light emitting layer; opening a plurality of second holes through said insulating layer to said cap layer; forming first and second metal p-contacts on said cap layer, one of said first metal p-contacts being formed through each of said first holes, one of said second p-metal contacts being formed through each of said second holes; forming metal n-contacts on a side of said substrate that lies opposite said insulating layer, said metal n-contacts being arranged to leave portions of said substrate exposed, one of said exposed portions lying opposite each of said first and metal p-contacts; and etching an isolation groove between each of said first and second metal p-contacts, said grooves extending into said first confining layer.
Claim 8
Dependent Claim
199 words
A process for fabricating an integrated optical device, comprising the steps of: in a single epitaxial growth operation and in succession on a substrate, growing a first confining layer, a first light emitting layer, a second confining layer, a second light emitting layer, a third confining layer, and a cap layer; depositing an insulating layer on said cap layer; opening a plurality of first holes through said insulating layer; diffusing a conductivity effecting material through said first holes into said first light emitting layer; opening a plurality of second holes through said insulating layer to said cap layer; forming first and second metal p-contacts on said cap layer, one of said first metal p-contacts being formed through each of said first holes, one of said second p-metal contacts being formed through each of said second holes; forming metal n-contacts on a side of said substrate that lies opposite said insulating layer, said metal n-contacts being arranged to leave portions of said substrate exposed, one of said exposed portions lying opposite each of said first and metal p-contacts; and etching an isolation groove between each of said first and second metal p-contacts, said grooves extending into said first confining layer.
Claim 9
Dependent Claim
24 words
The process of claim 6, wherein said substrate and said first and second light emitting layers are each formed of a Group IIIA-VA compound.
Claim 10
Dependent Claim
71 words
The process of claim 7, wherein said first light emitting layer is formed of a first quarternary Group IIIA-VA compound and said second light emitting layer is formed of a second quarternary Group IIIA-VA compound, the constituent elements in said first and second quarternary Group IIIA-VA compounds being the same, the properties of said constituent elements being different whereby said first and second light emitting layers emit photons having different wavelengths.
Claim 11
Dependent Claim
49 words
The process of claim 8, wherein said first quarternary Group IIIA-VA compound is in In x Ga 1-x As y P 1-y , where 0<x≦1 and 0<y≦1, and wherein said second quarternary Group IIIA-VA compound is In a Ga 1-a As b P 1-b , where 0<a≦1 and 0<b≦1.
References Cited (Backward Citations)
US3914137A
Cited
US3852798A
Cited
US3979587A
Cited
US4110781A
Cited
US4115150A
Cited
US4136928A
Cited
US4152044A
Cited
US4152713A
Cited
US4292512A
Cited
US4216485A
Cited
US4275404A
Cited
US4327962A
Cited
US4284884A
Cited
JPS56152266A
Cited
GB2094060A
Cited
JPS57190373A
Cited
EP0070234A2
Cited
US4477721A
Cited
US4675518A
Cited
JPS6021577A
Cited
JPS6085579A
Cited
US4667212A
Cited
JPS61229359A
Cited
JPS6237979A
Cited
JPS62119981A
Cited
JPS6365682A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-11-06 | 1993-05-08 | 1993-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-06 | 1997-05-08 | 1997-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-06 | 2001-05-08 | 2001-11-07 | $7700.00 | Window Closed / Lapsed |