Method of making a monolithic interleaved LED/PIN photodetector array

Claim 1

A process for fabricating an integrated optical device, comprising the steps of: in a single epitaxial growth operation and in succession on a substrate, growing an intrinsic layer, a first confining layer, an active light emitting layer, a second confining layer, and a cap layer; depositing an insulating layer on said cap layer; opening a plurality of first holes through said insulating layer to said cap layer; diffusing a conductivity effecting material through said first holes into said intrinsic layer; opening a plurality of second holes through said insulating layer to said cap layer; forming first and second metal p-contacts on said insulating layer, one of said first metal p-contacts being formed through each of said first holes, one of said second metal p-contacts being formed through each of said second holes; forming metal n-contacts on a side of said substrate that lies opposite said insulating layer, said metal n-contacts being arranged to leave portions of said substrate exposed, one of said exposed portions lying opposite each of said first and second metal p-contacts; etching an isolation groove between each of said first and second metal p-contacts, said grooves extending into said intrinsic layer; and etching windows through said substrate and said intrinsic layer to said first confining layer, one of said windows being etched opposite each of said second metal p-contacts.