Patent US5726487A successfully refreshed from Google Patents.
US5726487A
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Semiconductor device having an improved thin film transistor
Assignee: Sony Corp
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Filing: 1994-10-28
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Granted: 1998-03-10
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Expires: 2014-10-28
Abstract
Abstract The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
Inventors
- 👤 Toshiyuki Sameshima
- 👤 Masaki Hara
- 👤 Naoki Sano
- 👤 Dharam Pal Gosain
- 👤 Setsuo Usui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/01; H10D30/021; H10D30/031; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
48 words
A semiconductor device comprising: an insulating substrate; a thin film transistor formed on the insulating substrate, the thin film transistor having a channel region of a crystallized SiGe layer converted from an amorphous SiGe layer; and a drain region formed of a crystallized Si or a crystallized SiC.
Claim 2
Dependent Claim
48 words
A semiconductor device comprising: an insulating substrate; a thin film transistor formed on the insulating substrate, the thin film transistor having a channel region of a crystallized SiGe layer converted from an amorphous SiGe layer; and a drain region formed of a crystallized Si or a crystallized SiC.
Claim 3
Dependent Claim
18 words
The semiconductor device according to claim 1 wherein said crystallized SiGe layer is an intrinsic crystallized SiGe layer.
Claim 4
Dependent Claim
29 words
The semiconductor device according to claim 1 wherein said drain region is formed of a crystallized Si or a crystallized SiC having an impurity of a first conductivity type.
Claim 5
Dependent Claim
17 words
The semiconductor device according to claim 1 wherein said crystallized SiGe layer comprises a polycrystalline SiGe layer.
Claim 6
Dependent Claim
16 words
The semiconductor device according to claim 1 including an insulating layer deposited on said insulating substrate.
Claim 7
Dependent Claim
11 words
The semiconductor device according to claim 1 including a drain electrode.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-09 | 2001-09-08 | 2002-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-09 | 2005-09-08 | 2006-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-09 | 2009-09-08 | 2010-03-10 | $7700.00 | Window Closed / Lapsed |