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US5721455A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device having a thermal resistance detector in the heat radiating path

Assignee: Toshiba Corp
•
Filing: 1996-11-20
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Granted: 1998-02-24
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Expires: 2016-11-20
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Abstract

Abstract In a semiconductor device comprising a semiconductor chip on which semiconductor elements are formed, the semiconductor device further comprises a thermal resistance detector for detecting an increase of thermal resistance of a heat radiating path which is provided to radiate the heat generated in the semiconductor device during operation, and a thermal resistance detection result output circuit for outputting a result of a detection by the thermal resistance detector to an output of the semiconductor device. The semiconductor device can detect at the early stage the increase of the thermal resistance of the heat radiating path, and the deterioration of the semiconductor device due to the crack in the solder layer bonding the chip mounting insulation substrate and heat sink during the operation of the device.

Inventors

  • 👤 Masakatsu Takashita

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 01:48
CPC Classifications
H; H10; H10W; H10W40/00; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/751; H10W90/754

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 121 words
A semiconductor device comprising: a semiconductor chip; a heat sink; an insulation substrate having high thermal conductivity and being provided between the semiconductor chip and the heat sink so as to hold the semiconductor chip; a solder layer for bonding the insulation substrate to the heat sink; thermal resistance detection means for detecting an increase of thermal resistance of a heat radiating path including the insulation substrate, the solder and the heat sink, the thermal resistance detection means being provided on a peripheral portion of the insulation substrate and being electrically insulated from the semiconductor chip; and thermal resistance detection result output means for outputting a result of a detection by the thermal resistance detection means externally of the semiconductor device.
Claim 2
Dependent Claim 121 words
A semiconductor device comprising: a semiconductor chip; a heat sink; an insulation substrate having high thermal conductivity and being provided between the semiconductor chip and the heat sink so as to hold the semiconductor chip; a solder layer for bonding the insulation substrate to the heat sink; thermal resistance detection means for detecting an increase of thermal resistance of a heat radiating path including the insulation substrate, the solder and the heat sink, the thermal resistance detection means being provided on a peripheral portion of the insulation substrate and being electrically insulated from the semiconductor chip; and thermal resistance detection result output means for outputting a result of a detection by the thermal resistance detection means externally of the semiconductor device.
Claim 3
Dependent Claim 55 words
A semiconductor device according to claim 1, wherein the thermal resistance detection means determine on the basis of temperature detection output of one or a plurality of temperature detection element/elements arranged at least on a periphery of the insulation substrate that the thermal resistance in the heat radiating path is higher than a reference value.
Claim 4
Dependent Claim 61 words
A semiconductor device according to claim 1, wherein the thermal resistance detection means determine that the thermal resistance in the heat radiating path is higher than a reference value on the basis of an electric characteristics output depending on a thermal resistance of one or a plurality of temperature detection element/elements arranged at least on a periphery of the insulation substrate.
Claim 5
Dependent Claim 43 words
A semiconductor device according to claim 1, wherein the thermal resistance detection means determine that the thermal resistance in the heat radiating path is higher than a reference value by use of temperature detection element/elements arranged on a periphery of the semiconductor chip.
Claim 6
Dependent Claim 207 words
A semiconductor device comprising: a semiconductor chip; an insulation substrate having an element mounting surface on which a metal pattern is formed, and a back surface on which a metal layer is formed; a first solder layer for bonding the insulation substrate to the semiconductor chip in a state where the semiconductor chip is mounted on the metal pattern for mounting the chip; bonding wires provided between the metal pattern on the insulation substrate for mounting the semiconductor chip and a pad section of the semiconductor chip; a heat sink; a second solder layer for bonding the metal on the back surface of the insulation substrate to the heat sink in a state where the metal on the back surface of the insulation substrate contacts on the heat sink; thermal resistance detection means for detecting an increase of thermal resistance of a heat radiating path including the insulation substrate, the first solder, the second solder and the heat sink, the thermal resistance detection means being provided on a peripheral portion of the insulation substrate and being electrically insulated from the semiconductor chip; and thermal resistance detection result output means for outputting a result of a detection by the thermal resistance detection means externally of the semiconductor device.
Claim 7
Dependent Claim 207 words
A semiconductor device comprising: a semiconductor chip; an insulation substrate having an element mounting surface on which a metal pattern is formed, and a back surface on which a metal layer is formed; a first solder layer for bonding the insulation substrate to the semiconductor chip in a state where the semiconductor chip is mounted on the metal pattern for mounting the chip; bonding wires provided between the metal pattern on the insulation substrate for mounting the semiconductor chip and a pad section of the semiconductor chip; a heat sink; a second solder layer for bonding the metal on the back surface of the insulation substrate to the heat sink in a state where the metal on the back surface of the insulation substrate contacts on the heat sink; thermal resistance detection means for detecting an increase of thermal resistance of a heat radiating path including the insulation substrate, the first solder, the second solder and the heat sink, the thermal resistance detection means being provided on a peripheral portion of the insulation substrate and being electrically insulated from the semiconductor chip; and thermal resistance detection result output means for outputting a result of a detection by the thermal resistance detection means externally of the semiconductor device.

References Cited (Backward Citations)

US4125777A Cited
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US5172215A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-02-23 2001-08-25 2002-02-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-02-23 2005-08-25 2006-02-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-02-23 2009-08-25 2010-02-24 $7700.00 Window Closed / Lapsed

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