Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
148 words
An overcurrent limiting semiconductor device comprising: a package formed with a base plate, sidewalls and a cover plate; at least one transistor fixed onto said base plate; an encapsulation layer comprising a first resin layer formed on said base plate and a second resin layer formed on said first resin layer, said first resin layer and said second resin layer being made of different materials; terminal conductors respectively connected to the base, emitter and collector electrodes of said transistor, and being led out through the cover plate; and, a plurality of diodes electrically connected in series across base and emitter terminal conductors of said transistor, said being located in a space provided between said cover plate and said base plate of said package and being connected to the base and emitter terminal conductor of said transistor, said diodes comprising overcurrent limiting diodes enclosed in said second resin layer.
Claim 2
Dependent Claim
148 words
An overcurrent limiting semiconductor device comprising: a package formed with a base plate, sidewalls and a cover plate; at least one transistor fixed onto said base plate; an encapsulation layer comprising a first resin layer formed on said base plate and a second resin layer formed on said first resin layer, said first resin layer and said second resin layer being made of different materials; terminal conductors respectively connected to the base, emitter and collector electrodes of said transistor, and being led out through the cover plate; and, a plurality of diodes electrically connected in series across base and emitter terminal conductors of said transistor, said being located in a space provided between said cover plate and said base plate of said package and being connected to the base and emitter terminal conductor of said transistor, said diodes comprising overcurrent limiting diodes enclosed in said second resin layer.
Claim 3
Dependent Claim
35 words
An overcurrent limiting semiconductor device as claimed in claim 1, wherein said diodes are lead-mount type diodes, which are connected to each other and to the base and emitter terminal conductors by means of leads.
Claim 4
Dependent Claim
32 words
An overcurrent limiting semiconductor device as claimed in claim 1, wherein said diodes are positioned in parallel and in close proximity to each other and electrical leads interconnecting said diodes are bent.
Claim 5
Dependent Claim
18 words
An overcurrent limiting semiconductor device as claimed in claim 3, wherein said diodes are in a side-touching relationship.
Claim 6
Dependent Claim
18 words
An overcurrent limiting semiconductor device as claimed in claim 2, further comprising means for holding said diodes together.
Claim 7
Dependent Claim
19 words
An overcurrent limiting semiconductor device as claimed in claim 5, wherein said holding means is a heat shrinkable tubing.
Claim 8
Dependent Claim
32 words
An overcurrent limiting semiconductor device as claimed in claim 2, wherein said diodes are positioned in parallel and in close proximity to each other and electrical leads interconnecting said diodes are bent.
Claim 9
Dependent Claim
31 words
An overcurrent limiting semiconductor device as claimed in claim 1, wherein said diodes positioned in parallel and in close proximity to each other and electrical leads interconnecting said diodes are bent.
Claim 10
Dependent Claim
49 words
An overcurrent limiting semiconductor device as claimed in claim 1, wherein said diodes are in the form of a plurality of stacked and serially connected diode chips, which are commonly encapsulated and connected to the base and emitter terminal conductors by means of leads extending out of the encapsulation.
Claim 11
Dependent Claim
21 words
An overcurrent limiting semiconductor device as claimed in claim 1, wherein said transistor is in the form of a transistor chip.
Claim 12
Dependent Claim
27 words
An overcurrent limiting semiconductor device according to claim 1, wherein said first resin layer is made of silicon and said second resin layer is made of epoxy.