US5708288A
Expired / Lapsed
US
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Thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection and method
Assignee: NXP USA Inc
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Filing: 1995-11-02
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Granted: 1998-01-13
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Expires: 2015-11-02
Abstract
Abstract A thin film silicon on insulator circuit with a low voltage triggered, surface silicon controlled rectifier (30) for electrostatic damage protection and method is provided. A surface silicon controller rectifier (30) is formed in a thin device layer (130), overlying a buried insulation layer (110) and electrically coupled to a low voltage trigger apparatus (36). In one embodiment, a zener diode is employed as the low voltage trigger apparatus (36), and in another embodiment low voltage trigger apparatus (36) is an n-channel MOSFET.
Inventors
- 👤 John H. Quigley
- 👤 Jeremy C. Smith
- 👤 Percy Gilbert
- 👤 Shih Wei Sun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:48
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D86/00; H10D86/201
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
207 words
A thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection comprising: a thin silicon on insulator semiconductor substrate comprising a silicon device layer overlying a buried insulation layer, comprised of silicon oxide, and wherein said buried insulation layer overlies a silicon substrate; a plurality of integrated circuit devices formed in said silicon device layer, wherein said plurality of integrated circuit devices comprises an input/output circuit; and a surface silicon controlled rectifier formed in said silicon device layer, abutting said buried insulation layer, and electrically coupled to said input/output circuit, said surface silicon controlled rectifier comprising; a first transistor having a control electrode, a first current carrying electrode, and a second current carrying electrode, the control electrode of the first transistor coupled to the first current carrying electrode of the first transistor; a second transistor having a control electrode, a first current carrying electrode, and a second current carrying electrode, the control electrode of the second transistor coupled to the first current carrying electrode of the second transistor, the second current carrying electrode of the second transistor coupled to the control electrode of the first transistor and the second current carrying electrode of the first transistor coupled to the control electrode of the second transistor.
Claim 2
Dependent Claim
207 words
A thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection comprising: a thin silicon on insulator semiconductor substrate comprising a silicon device layer overlying a buried insulation layer, comprised of silicon oxide, and wherein said buried insulation layer overlies a silicon substrate; a plurality of integrated circuit devices formed in said silicon device layer, wherein said plurality of integrated circuit devices comprises an input/output circuit; and a surface silicon controlled rectifier formed in said silicon device layer, abutting said buried insulation layer, and electrically coupled to said input/output circuit, said surface silicon controlled rectifier comprising; a first transistor having a control electrode, a first current carrying electrode, and a second current carrying electrode, the control electrode of the first transistor coupled to the first current carrying electrode of the first transistor; a second transistor having a control electrode, a first current carrying electrode, and a second current carrying electrode, the control electrode of the second transistor coupled to the first current carrying electrode of the second transistor, the second current carrying electrode of the second transistor coupled to the control electrode of the first transistor and the second current carrying electrode of the first transistor coupled to the control electrode of the second transistor.
Claim 3
Dependent Claim
42 words
The thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection of claim 1, wherein said surface silicon controlled rectifier further comprises a low voltage triggering apparatus coupled between the control electrode of the first transistor and the second transistor.
Claim 4
Dependent Claim
26 words
The thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection of claim 2, wherein said low voltage triggering apparatus comprises a zener diode.
Claim 5
Dependent Claim
26 words
The thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection of claim 2, wherein said low voltage triggering apparatus comprises an n-channel MOSFET.
Claim 6
Dependent Claim
36 words
The thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection of claim 2, wherein said low voltage triggering apparatus is electrically coupled to said surface silicon controlled rectifier by a refractory metal silicide.
Claim 7
Dependent Claim
24 words
The thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection of claim 5, wherein the refractory metal silicide comprises titanium silicide.
Claim 8
Dependent Claim
33 words
The thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection of claim 2, wherein all elements of said low voltage triggering apparatus are formed within said surface silicon controlled rectifier.
Claim 9
Dependent Claim
32 words
The thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection of claim 1, wherein the first transistor is a bipolar transistor and the second transistor is a bipolar transistor.
Claim 10
Independent Claim
190 words
A method of protecting integrated circuits formed in thin film silicon on insulator substrates from electrostatic damage, comprising: forming a surface silicon controlled rectifier in a thin silicon device layer, the surface silicon controlled rectifier comprising: a first transistor having a control electrode, a first current carrying electrode, and a second current carrying electrode, the control electrode of the first transistor coupled to the first current carrying electrode of the first transistor; and a second transistor having a control electrode, a first current carrying electrode, and a second current carrying electrode, the control electrode of the second transistor coupled to the first current carrying electrode of the second transistor, the second current carrying electrode of the second transistor coupled to the control electrode of the first transistor and the second current carrying electrode of the first transistor coupled to the control electrode of the second transistor; forming a low voltage triggering apparatus in said thin silicon device layer; electrically coupling said low voltage triggering apparatus to said surface silicon controlled rectifier to form an electrostatic damage protection device; and electrically coupling said electrostatic damage protection device to an input/output circuit.
Claim 11
Independent Claim
190 words
A method of protecting integrated circuits formed in thin film silicon on insulator substrates from electrostatic damage, comprising: forming a surface silicon controlled rectifier in a thin silicon device layer, the surface silicon controlled rectifier comprising: a first transistor having a control electrode, a first current carrying electrode, and a second current carrying electrode, the control electrode of the first transistor coupled to the first current carrying electrode of the first transistor; and a second transistor having a control electrode, a first current carrying electrode, and a second current carrying electrode, the control electrode of the second transistor coupled to the first current carrying electrode of the second transistor, the second current carrying electrode of the second transistor coupled to the control electrode of the first transistor and the second current carrying electrode of the first transistor coupled to the control electrode of the second transistor; forming a low voltage triggering apparatus in said thin silicon device layer; electrically coupling said low voltage triggering apparatus to said surface silicon controlled rectifier to form an electrostatic damage protection device; and electrically coupling said electrostatic damage protection device to an input/output circuit.
Claim 12
Dependent Claim
36 words
The method of protecting integrated circuits formed in thin film silicon on insulator substrates from electrostatic damage of claim 9, wherein the step of forming the low voltage triggering apparatus further comprises forming a zener diode.
Claim 13
Dependent Claim
40 words
The method of protecting integrated circuits formed in thin film silicon on insulator substrates from electrostatic damage of claim 10, wherein the step of forming a zener diode further comprises forming a zener diode within said surface silicon controlled rectifier.
Claim 14
Dependent Claim
36 words
The method of protecting integrated circuits formed in thin film silicon on insulator substrates from electrostatic damage of claim 9, wherein the step of forming the low voltage triggering apparatus further comprises forming an n-channel MOSFET.
Claim 15
Dependent Claim
40 words
The method of protecting integrated circuits formed in thin film silicon on insulator substrates from electrostatic damage of claim 12, wherein the step of forming an n-channel MOSFET further comprises forming an n-channel MOSFET within said surface silicon controlled rectifier.
Claim 16
Dependent Claim
42 words
The method of protecting integrated circuits formed in thin film silicon on insulator substrates from electrostatic damage of claim 9 wherein the step of electrically coupling said low voltage triggering apparatus to said surface silicon controlled rectifier further comprises forming silicide interconnects.
Claim 17
Dependent Claim
153 words
The method of protecting integrated circuits formed in thin film silicon on insulator substrates from electrostatic damage of claim 9 wherein the step of forming a surface silicon controlled rectifier in a thin silicon device layer further comprises the steps of: forming a N+ doped surface silicon controlled rectifier (SSCR) region in a thin silicon device layer abutting a buried insulation layer; forming a P- doped SSCR region in said thin silicon device layer abutting said buried insulation layer, wherein said P- type SSCR region is adjacent said N+ type SSCR region; forming a N- doped SSCR region in said thin silicon device layer abutting said buried insulation layer, wherein said N- type SSCR region is adjacent said P- type SSCR region; and forming a P+ doped SSCR region in said thin silicon device layer abutting said buried insulation layer, wherein said P+ type SSCR region is adjacent said N- type SSCR region.
Claim 18
Independent Claim
137 words
A method of forming a low voltage triggered silicon controlled rectifier on a thin film silicon on insulator substrate comprising the steps of: forming a first transistor having a base, an emitter and a collector in a thin silicon device layer; forming a second transistor having a base, an emitter and a collector in said thin silicon device layer, wherein said collector of said first transistor is electrically coupled to said base of said second transistor and wherein said collector of said second transistor is electrically coupled to said base of said first transistor; and forming a low voltage triggering apparatus wherein said low voltage triggering apparatus is electrically coupled to said base of said first transistor and said base of said second transistor, and wherein said low voltage triggering apparatus is self-triggering at a predictable current.
Claim 19
Independent Claim
137 words
A method of forming a low voltage triggered silicon controlled rectifier on a thin film silicon on insulator substrate comprising the steps of: forming a first transistor having a base, an emitter and a collector in a thin silicon device layer; forming a second transistor having a base, an emitter and a collector in said thin silicon device layer, wherein said collector of said first transistor is electrically coupled to said base of said second transistor and wherein said collector of said second transistor is electrically coupled to said base of said first transistor; and forming a low voltage triggering apparatus wherein said low voltage triggering apparatus is electrically coupled to said base of said first transistor and said base of said second transistor, and wherein said low voltage triggering apparatus is self-triggering at a predictable current.
Claim 20
Dependent Claim
37 words
The method of forming a low voltage triggered silicon controlled rectifier on a thin film silicon on insulator substrate of claim 16, wherein the step of forming the low voltage triggering apparatus comprises forming a zener diode.
Claim 21
Dependent Claim
37 words
The method of forming a low voltage triggered silicon controlled rectifier on a thin film silicon on insulator substrate of claim 16, wherein the step of forming the low voltage triggering apparatus comprises forming an n-channel MOSFET.
Claim 22
Dependent Claim
45 words
The method of forming a low voltage triggered silicon controlled rectifier on a thin film silicon on insulator substrate of claim 16, wherein the step of forming the first transistor and the step of forming the second transistor comprise forming a surface silicon controlled rectifier.
Claim 23
Dependent Claim
66 words
The thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection of claim 1, wherein the control electrode of the first transistor is coupled to the second current carrying electrode of the first transistor via a first distributed resistance and the control electrode of the second transistor is coupled to the second current carrying electrode of the second transistor via a second distributed resistance.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-01-12 | 2001-07-14 | 2002-01-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-12 | 2005-07-14 | 2006-01-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-12 | 2009-07-14 | 2010-01-13 | $7700.00 | Window Closed / Lapsed |