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US5705846A
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US
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CMOS-compatible active pixel image array using vertical pnp cell
Assignee: Foveon Inc
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Filing: 1995-07-31
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Granted: 1998-01-06
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Expires: 2015-07-31
Abstract
Abstract A preferred pnp bipolar phototransistor pixel element in accordance with the present invention has a p-type collector region formed in p-type semiconductor material. An n-type base region is formed in the collector region. A p-type emitter region is formed in the base region. An annular n-type capacitor region is formed in the base region surrounding and spaced-apart from the emitter region. Conductive material is disposed over the capacitor region and separated therefrom by underlying dielectric material to define the pixel element's coupling capacitor.
Inventors
- 👤 Richard Billings Merrill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:21
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/196; H10F39/197
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
109 words
A vertical pnp bipolar phototransistor pixel element comprising: a collector region formed of semiconductor material of p-type conductivity; a base region of n-type conductivity formed in the collector region the base region having a first conductivity; an emitter region of p-type conductivity formed in the base region; a capacitor region of n-type conductivity formed in the base region in spaced-apart relationship to the emitter region the capacitor region having a second conductivity that is greater than the first conductivity; dielectric material formed on a surface of the capacitor region; and conductive material formed on the dielectric material above the capacitor region to be capacitively coupled to the capacitor region.
Claim 2
Dependent Claim
109 words
A vertical pnp bipolar phototransistor pixel element comprising: a collector region formed of semiconductor material of p-type conductivity; a base region of n-type conductivity formed in the collector region the base region having a first conductivity; an emitter region of p-type conductivity formed in the base region; a capacitor region of n-type conductivity formed in the base region in spaced-apart relationship to the emitter region the capacitor region having a second conductivity that is greater than the first conductivity; dielectric material formed on a surface of the capacitor region; and conductive material formed on the dielectric material above the capacitor region to be capacitively coupled to the capacitor region.
Claim 3
Dependent Claim
22 words
A phototransistor pixel element as in claim 1 wherein the capacitor region comprises a generally annular shape that surrounds the emitter region.
Claim 4
Dependent Claim
19 words
A phototransistor pixel element as in claim 1 wherein the dielectric material comprises silicon dioxide about 200-300 Å thick.
Claim 5
Dependent Claim
18 words
A phototransistor pixel element as in claim 3 wherein the conductive material comprises polysilicon about 3250 Å thick.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-01-05 | 2001-07-07 | 2002-01-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-05 | 2005-07-07 | 2006-01-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-05 | 2009-07-07 | 2010-01-06 | $7700.00 | Window Closed / Lapsed |