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US5705232A Expired / Lapsed US ⏱️ 0.0 years remaining

In-situ coat, bake and cure of dielectric material processing system for semiconductor manufacturing

Assignee: Texas Instruments Inc
•
Filing: 1994-09-20
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Granted: 1998-01-06
•
Expires: 2014-09-20
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Abstract

Abstract This is a system and method of in-situ coating, baking and curing of dielectric material. The system may include: dispensing apparatus for dispensing spin-on material; a lamp module 50; a window 54 connected to the lamp module 50; an environmental control chamber 56 connected to the window 54; an access gate 60 for wafers 58 in the environmental control chamber 56; a spin chuck 62 inside the environmental control chamber 56; and an exhaust pipe 64 connected to the environmental control chamber 56. The lamp module 50 may contains infra red and ultra violet lamps. In addition, the coating chamber may process dielectric material such as spin-on glass, silicon dioxide and various other spin-on material.

Inventors

  • 👤 Ming Hwang
  • 👤 Toyotaro Horiuchi
  • 👤 Peter Ying
  • 👤 Jing Shu

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 01:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; B; B05; B05D; B05D1/00; B05D1/002; B05D1/005; B05D3/00; B05D3/02; B05D3/0254; B05D3/0263; B05D3/06; B05D3/061; B05D3/065; B05D3/067; H10P14/65; H10P14/6516; H10P14/6536; H10P14/68; H10P14/683; H10P72/00; H10P72/04; H10P72/0448; H10P14/6538; H10P14/687

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 43 words
A method of processing spin-on material within a single chamber, said method comprising: coating a curable spin-on material on a semiconductor wafer; spinning said spin-on material, wherein said spinning provides a uniform thickness and dries said spin-on material; and curing said spin-on material.
Claim 2
Independent Claim 43 words
A method of processing spin-on material within a single chamber, said method comprising: coating a curable spin-on material on a semiconductor wafer; spinning said spin-on material, wherein said spinning provides a uniform thickness and dries said spin-on material; and curing said spin-on material.
Claim 3
Dependent Claim 15 words
The method of claim 1, wherein said coating spin-on material includes spinning-on low dielectric material.
Claim 4
Dependent Claim 15 words
The method of claim 1, wherein said coating spin-on material includes spinning-on polymeric spin-on glass.
Claim 5
Dependent Claim 13 words
The method of claim 1, wherein said coating spin-on material includes spinning-on polyimide.
Claim 6
Dependent Claim 14 words
The method of claim 1, wherein said coating spin-on material includes spinning-on silicon dioxide.
Claim 7
Dependent Claim 14 words
The method of claim 1, wherein said coating spin-on material includes coating organic compounds.
Claim 8
Dependent Claim 12 words
The method of claim 1, wherein said method includes single wafer processing.
Claim 9
Dependent Claim 24 words
The method of claim 1, wherein said method further includes single wafer processing in an assembly line process including other processing of said wafer.
Claim 10
Dependent Claim 21 words
The method of claim 1, whereto said method further includes depositing a protective layer over said spin-on material before said curing.
Claim 11
Dependent Claim 22 words
The method of claim 1, wherein said method further includes depositing a low dielectric material over said spin-on material before said curing.
Claim 12
Dependent Claim 30 words
The method of claim 1, wherein said curing includes curing said dielectric material with a heating lamp for less than 10 minutes, wherein said heating lamp provides optical radiation energy.
Claim 13
Dependent Claim 24 words
The method of claim 11, wherein said optical radiation energy includes an infrared spectral range of about 1 micron to 3.5 microns in wavelength.
Claim 14
Dependent Claim 18 words
The method of claim 1, wherein said curing of said spin-on material is done by a tungsten-halogen lamp.
Claim 15
Dependent Claim 24 words
The method of claim 1, wherein curing of said spin-on material includes curing a polyimide and said curing time is less than 5 minutes.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-01-05 2001-07-07 2002-01-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-01-05 2005-07-07 2006-01-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-01-05 2009-07-07 2010-01-06 $7700.00 Window Closed / Lapsed

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