US5098198A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wafer heating and monitor module and method of operation
Assignee: Applied Materials Inc
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Filing: 1991-09-03
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Granted: 1992-03-24
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Expires: 2011-09-03
Abstract
Abstract The temperature of a semiconductor wafer during annealing of metallization is accurately and indirectly monitored by supporting the wafer on a thin susceptor of constant emissivity and monitoring the temperature of the susceptor. The system has the added advantage of providing efficient, controlled heating of the wafer by radiant heating of the backside of the susceptor.
Inventors
- 👤 Jaim Nulman
- 👤 Dan Maydan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:19
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/06; H10P72/0602; H10P72/04; H10P72/0431; H10P72/0436
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
86 words
Apparatus for measuring the temperature of a semiconductor wafer, during heat treatment of the wafer, comprising: a thin, constant emissivity susceptor for providing fast thermal response between the susceptor and a wafer supported on the front side of the susceptor; means for mounting the susceptor with substantially the entire backside area thereof exposed; means for heating the susceptor from at least the backside thereof; and means for monitoring the temperature of the backside of the susceptor, whereby the temperature of the wafer can be indirectly determined.
Claim 2
Dependent Claim
86 words
Apparatus for measuring the temperature of a semiconductor wafer, during heat treatment of the wafer, comprising: a thin, constant emissivity susceptor for providing fast thermal response between the susceptor and a wafer supported on the front side of the susceptor; means for mounting the susceptor with substantially the entire backside area thereof exposed; means for heating the susceptor from at least the backside thereof; and means for monitoring the temperature of the backside of the susceptor, whereby the temperature of the wafer can be indirectly determined.
Claim 3
Dependent Claim
22 words
The apparatus of claim 1, wherein emissivity of the susceptor is about 0.9 and the susceptor is approximately 0.5 mm-8 mm thick.
Claim 4
Dependent Claim
17 words
The apparatus of claim 1 or 2, wherein the susceptor is silicon carbide or silicon carbide-coated graphite.
Claim 5
Dependent Claim
25 words
The apparatus of claim 1, wherein the means for mounting the susceptor comprises a plurality of fingers arranged for engaging the periphery of the susceptor.
Claim 6
Dependent Claim
22 words
The apparatus of claim 1, wherein the means for monitoring the temperature of the backside of the susceptor is an infrared sensor.
Claim 7
Dependent Claim
21 words
The apparatus of claim 1, wherein the means for monitoring the temperature of the backside of the susceptor is a thermocouple.
Claim 8
Dependent Claim
74 words
A process for monitoring the temperature of a semiconductor wafer, during heat treatment thereof comprising: providing a constant emissivity susceptor; supporting the susceptor so as to leave substantially all of the backside of the susceptor uncovered; supporting a semiconductor wafer on the front side of the susceptor; heating the susceptor from at least the backside thereof; and monitoring the temperature of the wafer indirectly by monitoring the temperature of the backside of the susceptor.
Claim 9
Dependent Claim
74 words
A process for monitoring the temperature of a semiconductor wafer, during heat treatment thereof comprising: providing a constant emissivity susceptor; supporting the susceptor so as to leave substantially all of the backside of the susceptor uncovered; supporting a semiconductor wafer on the front side of the susceptor; heating the susceptor from at least the backside thereof; and monitoring the temperature of the wafer indirectly by monitoring the temperature of the backside of the susceptor.
Claim 10
Dependent Claim
30 words
The method of monitoring the temperature of a wafer of claim 7, wherein the emissivity of the susceptor is about 0.9 and the susceptor is approximately 0.5 mm-8 mm thick.
Claim 11
Dependent Claim
17 words
The method of claim 7 or 8, wherein the susceptor is silicon carbide or silicon carbide-coated graphite.
Claim 12
Dependent Claim
20 words
The temperature monitoring method of claim 7, wherein the susceptor temperature is measured using a thermocouple attached to the susceptor.
Claim 13
Dependent Claim
22 words
The temperature monitoring method of claim 7, wherein the susceptor temperature is measured by sensing thermal energy emitted from the backside thereof.
Claim 14
Dependent Claim
58 words
The method of monitoring the temperature of a wafer of claim 7, further comprising the step of calibrating the susceptor relative to the temperature of the wafer by monitoring the temperature of the wafer and the susceptor over a range of temperatures and determining the difference in temperature between the wafer and the susceptor over the temperature range.
Claim 15
Dependent Claim
84 words
Apparatus for measuring the temperature of a wafer during heat treatment thereof which comprises: a) a susceptor having a known emissivity of the backside thereof; b) means for mounting said susceptor so that its backside is exposed, c) means for mounting a semiconductor wafer onto the frontside of said susceptor, d) means for heating said susceptor, and e) means for measuring the temperature of the backside of said susceptor whereby the temperature of said wafer is measured indirectly from the temperature of said susceptor.
Claim 16
Dependent Claim
84 words
Apparatus for measuring the temperature of a wafer during heat treatment thereof which comprises: a) a susceptor having a known emissivity of the backside thereof; b) means for mounting said susceptor so that its backside is exposed, c) means for mounting a semiconductor wafer onto the frontside of said susceptor, d) means for heating said susceptor, and e) means for measuring the temperature of the backside of said susceptor whereby the temperature of said wafer is measured indirectly from the temperature of said susceptor.
Claim 17
Dependent Claim
46 words
Apparatus according to claim 13 wherein the means for measuring the temperature of the backside of the susceptor comprises means for measuring thermal radiation emitted from the backside surface of the susceptor, and means for calculating the temperature of the susceptor based on the measured radiation.
Claim 18
Dependent Claim
28 words
Apparatus according to claim 14 wherein the means for measuring the temperature of the backside of the susceptor comprises a thermocouple mounted on or embedded in said susceptor.
Claim 19
Dependent Claim
22 words
Apparatus according to claim 14 wherein the means for measuring the temperature of the backside of the susceptor comprises an infrared sensor.
Claim 20
Independent Claim
63 words
A method of indirectly measuring the temperature of a semiconductor wafer during heat treatment thereof which comprises a) contacting said wafer with the frontside of a susceptor having a known emissivity, b) heating said susceptor from the backside thereof, c) measuring the temperature of the backside of said susceptor, and d) calculating the temperature of said wafer from the temperature of said susceptor.
Claim 21
Independent Claim
63 words
A method of indirectly measuring the temperature of a semiconductor wafer during heat treatment thereof which comprises a) contacting said wafer with the frontside of a susceptor having a known emissivity, b) heating said susceptor from the backside thereof, c) measuring the temperature of the backside of said susceptor, and d) calculating the temperature of said wafer from the temperature of said susceptor.
Claim 22
Dependent Claim
42 words
A method according to claim 17 wherein the temperature of the backside of said susceptor is measured by measuring the thermal radiation emitted from the backside surface of said susceptor and calculating the temperature of the susceptor based on the measured radiation.
Claim 23
Dependent Claim
24 words
A method according to claim 18 wherein the thermal radiation is measured by means of a thermocouple mounted on or embedded in said susceptor.
Claim 24
Dependent Claim
18 words
A method according to claim 18 wherein the thermal radiation is measure by means of an infrared sensor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-24 | 1995-09-23 | 1996-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-24 | 1999-09-23 | 2000-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-24 | 2003-09-23 | 2004-03-24 | $7700.00 | Window Closed / Lapsed |