Patent US1649078A successfully refreshed from Google Patents.
Patent US5702847A successfully refreshed from Google Patents.
US5702847A
Expired / Lapsed
US
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Phase shift photomask, phase shift photomask blank, and process for fabricating them
Assignee: Dai Nippon Printing Co Ltd
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Filing: 1995-05-30
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Granted: 1997-12-30
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Expires: 2015-05-30
Abstract
Abstract The invention relates to a phase shift photomask in which the peripheral region portion of a phase shift layer is removed by a relatively simple procedure and which has no or little defect and is inexpensive, a blank therefor, and a process for fabricating them. The process includes the steps of forming phase shift layer 23 all over the surface of one side of transparent substrate 21, and immersing only the peripheral region of substrate 21 in etching solution 25 to etch away the peripheral region of phase shift layer 23, whereby phase shift layer 27 is confined within an area smaller than that of substrate 21.
Inventors
- 👤 Norihiro Tarumoto
- 👤 Hiroyuki Miyashita
- 👤 Yukio Iimura
- 👤 Koichi Mikami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 22:57
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/29; G03F1/30; G03F1/32; G03F1/68; G03F1/80
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
72 words
A phase shift photomask blank for projection exposure having at least a phase shift layer comprising spin-on glass on a transparent substrate wherein light which impinges on said photomask blank and passes through said phase shift layer is shifted in phase, characterized in that the peripheral region of the phase shift layer on the substrate is removed to confine the phase shift layer within an area smaller than that of the substrate.
Claim 2
Dependent Claim
72 words
A phase shift photomask blank for projection exposure having at least a phase shift layer comprising spin-on glass on a transparent substrate wherein light which impinges on said photomask blank and passes through said phase shift layer is shifted in phase, characterized in that the peripheral region of the phase shift layer on the substrate is removed to confine the phase shift layer within an area smaller than that of the substrate.
Claim 3
Dependent Claim
27 words
A phase shift photomask blank according to claim 1, characterized in that the removal of the peripheral region of the phase shift film is achieved by etching.
Claim 4
Dependent Claim
45 words
A phase shift photomask blank according to claim 1, characterized in that the removal of the peripheral region of the phase shift film is achieved by providing a layer of material capable of repelling the phase shift layer on the peripheral region of the substrate.
Claim 5
Dependent Claim
46 words
A phase shift photomask blank according to claim 1, characterized in that the removal of the peripheral region of the phase shift film is achieved by providing a layer of material capable of lifting off the phase shift layer on the peripheral region of the substrate.
Claim 6
Dependent Claim
47 words
A phase shift photomask having at least a phase shift pattern on a transparent substrate, characterized in that the peripheral region of the phase shift pattern area on the substrate is removed to confine the phase shift layer within an area smaller than that of the substrate.
Claim 7
Dependent Claim
47 words
A phase shift photomask having at least a phase shift pattern on a transparent substrate, characterized in that the peripheral region of the phase shift pattern area on the substrate is removed to confine the phase shift layer within an area smaller than that of the substrate.
Claim 8
Dependent Claim
21 words
A phase shift photomask according to claim 5, characterized in that the phase shift pattern is made up of spin-on glass.
Claim 9
Dependent Claim
29 words
A phase shift photomask according to claim 5 or 6, characterized in that the removal of the peripheral region of the phase shift pattern area is achieved by etching.
Claim 10
Dependent Claim
47 words
A phase shift photomask according to claim 5 or 6, characterized in that the removal of the peripheral region of the phase shift pattern area is achieved by providing, on the peripheral region of the substrate, a layer of material capable of repelling the phase shift layer.
Claim 11
Dependent Claim
49 words
A phase shift photomask according to claim 5 or 6, characterized in that the removal of the peripheral region of the phase shift pattern area is achieved by providing, on the peripheral region of the substrate, a layer of material capable of lifting off the phase shift pattern area.
Claim 12
Dependent Claim
93 words
A process for fabricating a phase shift photomask blank for projection exposure, characterized by: forming a phase shift layer comprising spin-on glass all over the surface of one side of a transparent substrate so that light which impinges on said photomask blank and passes through said phase shift layer is shifted in phase, and immersing only the peripheral region of the substrate in an etching solution to etch away the peripheral region of the phase shift layer, whereby the phase shift layer is confined within an area smaller than that of the substrate.
Claim 13
Dependent Claim
93 words
A process for fabricating a phase shift photomask blank for projection exposure, characterized by: forming a phase shift layer comprising spin-on glass all over the surface of one side of a transparent substrate so that light which impinges on said photomask blank and passes through said phase shift layer is shifted in phase, and immersing only the peripheral region of the substrate in an etching solution to etch away the peripheral region of the phase shift layer, whereby the phase shift layer is confined within an area smaller than that of the substrate.
Claim 14
Dependent Claim
28 words
A process for fabricating a phase shift photomask blank according to claim 10, characterized in that the etching is done with the use of an alkaline etching solution.
Claim 15
Dependent Claim
66 words
A process for fabricating a phase shift photomask, characterized by: forming a phase shift pattern all over the surface of one side of a transparent substrate, and immersing only the peripheral region of the substrate in an etching solution to etch away the peripheral region of the phase shift pattern, whereby the phase shift pattern is confined within an area smaller than that of the substrate.
Claim 16
Dependent Claim
66 words
A process for fabricating a phase shift photomask, characterized by: forming a phase shift pattern all over the surface of one side of a transparent substrate, and immersing only the peripheral region of the substrate in an etching solution to etch away the peripheral region of the phase shift pattern, whereby the phase shift pattern is confined within an area smaller than that of the substrate.
Claim 17
Dependent Claim
27 words
A process for fabricating a phase shift photomask according to claim 12, characterized in that the etching is done with the use of an alkaline etching solution.
Claim 18
Dependent Claim
89 words
A process for fabricating a phase shift photomask blank for projection exposure, characterized by including the step of providing a layer of material capable of repelling an overlying phase shift layer comprising spin-on glass on the peripheral region of a transparent substrate, whereby, when the overlying phase shift layer is provided so that light which impinges on said photomask blank and passes through said phase shift layer is shifted in phase, only the peripheral region of the phase shift layer is repelled by said layer of material for removal.
Claim 19
Dependent Claim
89 words
A process for fabricating a phase shift photomask blank for projection exposure, characterized by including the step of providing a layer of material capable of repelling an overlying phase shift layer comprising spin-on glass on the peripheral region of a transparent substrate, whereby, when the overlying phase shift layer is provided so that light which impinges on said photomask blank and passes through said phase shift layer is shifted in phase, only the peripheral region of the phase shift layer is repelled by said layer of material for removal.
Claim 20
Dependent Claim
31 words
A process for fabricating a phase shift photomask blank according to claim 14, characterized in that the material provided on the peripheral region of the transparent substrate is a fluorocarbon resin.
Claim 21
Dependent Claim
74 words
A process for fabricating a phase shift photomask, said process comprising the steps of: providing a layer of material on the peripheral region of a transparent substrate; providing a phase shift layer overlying said transparent substrate, wherein the material provided on the peripheral region of the transparent substrate repels formation of a phase shift pattern area so that a phase shift pattern area is not formed on the peripheral region of the transparent substrate.
Claim 22
Dependent Claim
74 words
A process for fabricating a phase shift photomask, said process comprising the steps of: providing a layer of material on the peripheral region of a transparent substrate; providing a phase shift layer overlying said transparent substrate, wherein the material provided on the peripheral region of the transparent substrate repels formation of a phase shift pattern area so that a phase shift pattern area is not formed on the peripheral region of the transparent substrate.
Claim 23
Dependent Claim
30 words
A process for fabricating a phase shift photomask according to claim 16, characterized in that the material provided on the peripheral region of the transparent substrate is a fluorocarbon resin.
Claim 24
Dependent Claim
78 words
A process for fabricating a phase shift mask blank for projection exposure, characterized by including the steps of providing a layer of material capable of lifting off an overlying phase shift layer comprising spin-on glass on the peripheral region of a transparent substrate, providing the overlying phase shift layer so that light which impinges on said phase shift mask blank and passes through said phase shift layer is shifted in phase, and lifting off the phase shift layer.
Claim 25
Dependent Claim
78 words
A process for fabricating a phase shift mask blank for projection exposure, characterized by including the steps of providing a layer of material capable of lifting off an overlying phase shift layer comprising spin-on glass on the peripheral region of a transparent substrate, providing the overlying phase shift layer so that light which impinges on said phase shift mask blank and passes through said phase shift layer is shifted in phase, and lifting off the phase shift layer.
Claim 26
Dependent Claim
22 words
A process for fabricating a phase shift mask blank according to claim 18, characterized in that the lifting-off is done by heating.
Claim 27
Dependent Claim
58 words
A process for fabricating a phase shift mask blank according to claim 19, characterized in that the material capable of lifting off the overlying phase shift pattern area is a material that is solid at normal temperature or 25° C., has a melting point of 150° C. or lower, and is melted by heating at a suitable temperature.
Claim 28
Dependent Claim
53 words
A process for fabricating a phase shift mask, comprising the steps of providing a layer of material capable of lifting off an overlying phase shift pattern area comprising spin-on glass on the peripheral region of a transparent substrate, providing the overlying phase shift pattern area, and lifting off the phase shift pattern area.
Claim 29
Dependent Claim
53 words
A process for fabricating a phase shift mask, comprising the steps of providing a layer of material capable of lifting off an overlying phase shift pattern area comprising spin-on glass on the peripheral region of a transparent substrate, providing the overlying phase shift pattern area, and lifting off the phase shift pattern area.
Claim 30
Dependent Claim
21 words
A process for fabricating a phase shift mask according to claim 21, characterized in that the lifting-off is done by heating.
Claim 31
Dependent Claim
56 words
A process for fabricating a phase shift mask according to claim 22, characterized in that the material capable of lifting off the overlying phase shift layer is a material that is solid at normal temperature or 25° C., has a melting point of 150° C. or lower, and is melted by heating at a suitable temperature.
References Cited (Backward Citations)
US3986876A
Cited
US4057777A
Cited
US4506006A
Cited
US4533624A
Cited
US4568573A
Cited
US4995339A
Cited
US5362591A
Cited
US5248575A
Cited
US5472812A
Cited
US5368963A
Cited
US5246800A
Cited
US5292623A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-29 | 2001-06-30 | 2001-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-29 | 2005-06-30 | 2005-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-29 | 2009-06-30 | 2009-12-30 | $7700.00 | Window Closed / Lapsed |