Mask having a phase shifter and method of manufacturing same

Claim 2

A mask member comprising: a substrate substantially transparent to exposure light; a first phase shifter layer formed on said substrate; and a second phase shifter layer formed on said first shifter layer; said first phase shifter layer being adapted to change a phase of incident light by 180°±10° when said incident light transmits through said first phase shifter layer, and said second phase shifter layer being adapted to further change the phase of said incident light by 180°±10° when said incident light which has transmitted through said first phase shifter layer further transmits through said second phase shifter layer.

Claim 3

A mask member according to claim 1, wherein the thickness of said first and second phase shifter layers falls within a range of λ/(4(n-1)) to (3λ)/(4(4(n-1)) where λ represents the wave length of the exposure light and n represents the refractive index of the phase shifter layer forming material at the wave length λ.

Claim 4

A mask member according to claim 1, wherein a light shielding film having a predetermined configuration is provided between said substrate and said first phase shifter layer.

Claim 5

A mask member according to claim 1, wherein a light shielding film having a predetermined configuration is provided between said first phase shifter layer and said second phase shifter layer.

Claim 6

A mask member according to claim 1, wherein a light shielding film having a predetermined configuration is provided on said second phase shifter layer.

Claim 7

A mask member according to claim 1, wherein a material of said first phase shifter layer is different from a material of said second phase shifter layer.

Claim 8

A mask member according to claim 1, wherein said first phase shifter layer and said second phase shifter layer are formed by using materials so that when said first and second phase shifter layers are etched successively by using a same etching means, etching rate of said first phase shifter layer is larger than an etching rate of said second phase shifter layer.

Claim 9

A masking member according to claim 1, wherein said second phase shifter layer is a transparent antistatic layer.

Claim 10

A mask member, comprising: a substrate substantially transparent to exposure light; a first phase shifter layer formed on said substrate; and a second phase shifter layer formed on a first portion of said first phase shifter layer but not on a second portion thereof, said first phase shifter layer being adapted to change a phase of incident light of 180° plus or minus 10° when said incident light transmits through said first phase shifter layer, and said second phase shifter layer being adapted to further change the phase of said incident light by 180° plus or minus 10° when said incident light which has been transmitted through said first phase shifter layer further transmits through said second phase shifter layer whereby a defect portion in said second phase shifter layer can be corrected by removal of both the second phase shifter layer and the underlying first phase shifter layer in the area of said defect portion, and wherein a material of said first phase shifter layer is the same as a material of said second phase shifter layer.

Claim 11

A mask member, comprising: a substrate substantially transparent to exposure light; a first phase shifter layer formed on said substrate; and a second phase shifter layer formed on a first portion of said first phase shifter layer but not on a second portion thereof, said first phase shifter layer being adapted to change a phase of incident light of 180° plus or minus 10° when said incident light transmits through said first phase shifter layer, and said second phase shifter layer being adapted to further change the phase of said incident light by 180° plus or minus 10° when said incident light which has been transmitted through said first phase shifter layer further transmits through said second phase shifter layer whereby a defect portion in said second phase shifter layer can be corrected by removal of both the second phase shifter layer and the underlying first phase shifter layer in the area of said defect portion, and wherein a material of said first phase shifter layer is the same as a material of said second phase shifter layer.

Claim 12

A mask for exposure comprising: a substrate having a light transmitting property to exposure light; a light shielding film formed partially on said substrate with a predetermined thickness and pattern configuration; and a phase shifter film formed on a side wall of said light shielding film so as to surround the side wall, said phase shifter film having a width which is smaller than a resolution limit of an optical projection system to be used for a pattern transference with the mask.

Claim 13

A mask for exposure comprising: a substrate having a light transmitting property to exposure light; a light shielding film formed partially on said substrate with a predetermined thickness and pattern configuration; and a phase shifter film formed on a side wall of said light shielding film so as to surround the side wall, said phase shifter film having a width which is smaller than a resolution limit of an optical projection system to be used for a pattern transference with the mask.

Claim 14

A mask for exposure comprising: a substrate having a light transmitting property to exposure light; a light shielding film formed partially on said substrate with a predetermined thickness and pattern configuration; a phase shifter film formed between said substrate and said light shielding film; wherein said light shielding film and said phase shifter film are disposed overlapping to each other when viewed in a plane geometry so that a peripheral portion of said phase shifter film extends beyond a periphery of said light shielding film viewed in a plane geometry, and a coat film is formed as a phase shifter on the extended portion of said phase shifter film and on a side wall of said light shielding film to surround the side wall, said coat film on the side wall having a width which is smaller than a resolution limit of projection system to be used for a pattern transference with the mask.

Claim 15

A mask for exposure comprising: a substrate having a light transmitting property to exposure light; a light shielding film formed partially on said substrate with a predetermined thickness and pattern configuration; a phase shifter film formed between said substrate and said light shielding film; wherein said light shielding film and said phase shifter film are disposed overlapping to each other when viewed in a plane geometry so that a peripheral portion of said phase shifter film extends beyond a periphery of said light shielding film viewed in a plane geometry, and a coat film is formed as a phase shifter on the extended portion of said phase shifter film and on a side wall of said light shielding film to surround the side wall, said coat film on the side wall having a width which is smaller than a resolution limit of projection system to be used for a pattern transference with the mask.