Flash memory erase with controlled band-to-band tunneling current

Claim 2

A floating gate memory integrated circuit, comprising: a set of floating gate memory cells arranged in a plurality of rows and columns, said cells having a high threshold state in which cells are not conductive in response to a read potential applied to control gate terminals, and a low threshold state in which cells are conductive in response to the read potential applied to the control gate terminals; a plurality of drain lines coupled to drain terminals of respective columns of cells in the set; a plurality of source lines coupled to source terminals of respective columns of cells in the set; a plurality of word lines coupled to control gate terminals of respective rows of cells in the set; a control circuit, coupled to the pluralities of drain lines, source lines and word lines, for setting the cells in the set in the high threshold state in parallel to the low threshold state, including voltage supply circuits to supply a first voltage sequence to lower the thresholds of cells in the set by Fowler-Nordheim tunneling, the first voltage sequence including applying a negative potential to the plurality of word lines, and applying a first positive potential to the plurality of source lines, then testing the thresholds of the cells, and if all the cells are not in the low threshold state, and if a number M of times the first voltage sequence has been tried does not equal a retry limit, then retrying the first voltage sequence and the testing until all the cells are in the low threshold state, where M is greater than or equal to one, and if any of the cells are not in the low threshold state after the number M of retries of the first voltage sequence, supply a second voltage sequence to lower the thresholds of cells in the set by Fowler-Nordheim tunneling, the second voltage sequence including applying a negative potential to the plurality of word lines, and applying a second positive potential to the plurality of source lines, then testing the thresholds of the cells, and if all the cells are not in the low threshold state, retrying the second voltage sequence and the testing until all the cells are in the low threshold state, or at least until a number of retries has been executed; wherein the first and second voltage sequences induce band-to-band tunneling current in addition to Fowler-Nordheim maneling current, said band-to-band tunneling current characterized by a turn on threshold source potential which is inversely related to the threshold of the cell receiving said first or second voltage sequence, and said first positive voltage is set at a level which is near or above the turn on threshold source potential for higher threshold cells in the high threshold state, and less than the turn on threshold source potential for lower threshold cells in the high threshold state, and the second positive potential is set at level which is near or above the turn on threshold source potential for lower threshold cells in the high threshold state, so that band-to-band tunneling current is controlled in said first voltage sequence in the presence of higher threshold cells in the high threshold state, and the higher threshold cells in the high threshold state are lowered in threshold before said second voltage sequence to limit peak current consumption.

Claim 3

The floating gate memory integrated circuit of claim 1, wherein said first positive potential is less than 5 volts, and said second positive potential is less than 7 volts.

Claim 4

The floating gate memory integrated circuit of claim 2, wherein said negative potential in said first voltage sequence is less than negative 6 volts.

Claim 5

The floating gate memory integrated circuit of claim 2, wherein said negative potentials in said first voltage sequence and in said second voltage sequence are less than negative 6 volts.

Claim 6

The floating gate memory integrated circuit of claim 1, wherein said first positive potential is between 4 and 5 volts, and said second positive potential is between 5 and 6 volts.

Claim 7

The floating gate memory integrated circuit of claim 5, wherein said negative potentials in said first voltage sequence and in said second voltage sequence are less than negative 7 volts.

Claim 8

The floating gate memory integrated circuit of claim 1, wherein said set of cells includes more than 250 thousand cells.

Claim 9

The floating gate memory integrated circuit of claim 1, wherein said set of cells includes more than 4 million cells.

Claim 10

The floating gate integrated circuit of claim 1, wherein said control circuit sets the plurality of drain lines to an open circuit state in said first and second voltage sequences.

Claim 11

A floating gate memory integrated circuit, comprising: an array of floating gate memory cells arranged in a plurality of rows and columns including a plurality of sectors, said cells having a high threshold state in which cells are not conductive in response to a read potential applied to control gate terminals, and a low threshold state in which cells are conductive in response to the read potential applied to the control gate terminals, and in which each sector includes a plurality of drain lines coupled to drain terminals of respective columns of cells in the sector; a plurality of source lines coupled to source terminals of respective columns of cells in the sector; and a plurality of word lines coupled to control gate terminals of respective rows of cells in the sector; a plurality of sector flags indicating sectors of the array to be erased in response to input signals; a first control circuit, coupled to the pluralities of sector flags, drain lines, source lines and word lines, for setting the cells in selected sectors having set sector flags in the high threshold state in parallel to the low threshold state, including voltage supply circuits to supply a first voltage sequence to lower the thresholds of cells in the selected sectors by Fowler-Nordheim tunneling, the first voltage sequence including applying a negative potential to the plurality of word lines, and applying a first positive potential to the plurality of source lines, then testing the thresholds of the cells, and if all the cells are not in the low threshold state, and if a number M of times the first voltage sequence has been tried does not equal a retry limit, then retrying the first voltage sequence and the testing until all the cells are in the low threshold state, where M is greater than or equal to one, if any of the cells are not in the low threshold state after the number M of retries of the first voltage sequence, supply a second voltage sequence to lower the thresholds of cells in the selected sectors by Fowler-Nordheim tunneling, the second voltage sequence including applying a negative potential to the plurality of word lines, and applying a second positive potential to the plurality of source lines, then testing the thresholds of the cells, and if all the cells are not in the low threshold state, retrying the second voltage sequence and the testing until all the cells are in the low threshold state, or at least until a number of retries has been executed; wherein the first and second voltage sequences induce band-to-band tunneling current in addition to Fowler-Nordheim tunneling current, said band-to-band tunneling current characterized by a turn on threshold source potential which is inversely related to the threshold of the cell receiving said first or second voltage sequence, and said first positive voltage is set at a level which is near or above the turn on threshold source potential for higher threshold cells in the high threshold state, and less than the turn on threshold source potential for lower threshold cells in the high threshold state, and the second positive potential is set at level which is near or above the turn on threshold source potential for lower threshold cells in the high threshold state, so that band-to-band maneling current is controlled in said first voltage sequence in the presence of higher threshold cells in the high threshold state, and the higher threshold cells in the high threshold state are lowered in threshold before said second voltage sequence to limit peak current consumption; and a second control circuit, coupled to the plurality of sector flags, and to the pluralities of drain lines, source lines and word lines in the plurality of sectors, and wherein said first and second voltage sequences result in some cells having thresholds lowered below a selected limit of threshold voltages, including voltage supply circuits to supply a repair pulse to the selected sectors indicated by the plurality of sector flags, during a repair time interval across the plurality of source lines and the plurality of drain lines, while setting the voltage on the plurality of word lines to a level below the selected limit.

Claim 12

A floating gate memory integrated circuit, comprising: an array of floating gate memory cells arranged in a plurality of rows and columns including a plurality of sectors, said cells having a high threshold state in which cells are not conductive in response to a read potential applied to control gate terminals, and a low threshold state in which cells are conductive in response to the read potential applied to the control gate terminals, and in which each sector includes a plurality of drain lines coupled to drain terminals of respective columns of cells in the sector; a plurality of source lines coupled to source terminals of respective columns of cells in the sector; and a plurality of word lines coupled to control gate terminals of respective rows of cells in the sector; a plurality of sector flags indicating sectors of the array to be erased in response to input signals; a first control circuit, coupled to the pluralities of sector flags, drain lines, source lines and word lines, for setting the cells in selected sectors having set sector flags in the high threshold state in parallel to the low threshold state, including voltage supply circuits to supply a first voltage sequence to lower the thresholds of cells in the selected sectors by Fowler-Nordheim tunneling, the first voltage sequence including applying a negative potential to the plurality of word lines, and applying a first positive potential to the plurality of source lines, then testing the thresholds of the cells, and if all the cells are not in the low threshold state, and if a number M of times the first voltage sequence has been tried does not equal a retry limit, then retrying the first voltage sequence and the testing until all the cells are in the low threshold state, where M is greater than or equal to one, if any of the cells are not in the low threshold state after the number M of retries of the first voltage sequence, supply a second voltage sequence to lower the thresholds of cells in the selected sectors by Fowler-Nordheim tunneling, the second voltage sequence including applying a negative potential to the plurality of word lines, and applying a second positive potential to the plurality of source lines, then testing the thresholds of the cells, and if all the cells are not in the low threshold state, retrying the second voltage sequence and the testing until all the cells are in the low threshold state, or at least until a number of retries has been executed; wherein the first and second voltage sequences induce band-to-band tunneling current in addition to Fowler-Nordheim tunneling current, said band-to-band tunneling current characterized by a turn on threshold source potential which is inversely related to the threshold of the cell receiving said first or second voltage sequence, and said first positive voltage is set at a level which is near or above the turn on threshold source potential for higher threshold cells in the high threshold state, and less than the turn on threshold source potential for lower threshold cells in the high threshold state, and the second positive potential is set at level which is near or above the turn on threshold source potential for lower threshold cells in the high threshold state, so that band-to-band maneling current is controlled in said first voltage sequence in the presence of higher threshold cells in the high threshold state, and the higher threshold cells in the high threshold state are lowered in threshold before said second voltage sequence to limit peak current consumption; and a second control circuit, coupled to the plurality of sector flags, and to the pluralities of drain lines, source lines and word lines in the plurality of sectors, and wherein said first and second voltage sequences result in some cells having thresholds lowered below a selected limit of threshold voltages, including voltage supply circuits to supply a repair pulse to the selected sectors indicated by the plurality of sector flags, during a repair time interval across the plurality of source lines and the plurality of drain lines, while setting the voltage on the plurality of word lines to a level below the selected limit.

Claim 13

The floating gate memory integrated circuit of claim 10, wherein said first positive potential is less than 5 volts, and said second positive potential is less than 7 volts.

Claim 14

The floating gate memory integrated circuit of claim 11, wherein said negative potential in said first voltage sequence is less than negative 6 volts.

Claim 15

The floating gate memory integrated circuit of claim 11, wherein said negative potentials in said first voltage sequence and in said second voltage sequence are less than negative 6 volts.

Claim 16

The floating gate memory integrated circuit of claim 10, wherein said first positive potential is between 4 and 5 volts, and said second voltage potential is between 5 and 6 volts.

Claim 17

The floating gate memory integrated circuit of claim 14, wherein said negative potentials in said first voltage sequence and in said second positive sequence are less than negative 7 volts.

Claim 18

The floating gate memory integrated circuit of claim 10, wherein said sectors in said plurality of sectors include more than 250 thousand cells.

Claim 19

The floating gate memory integrated circuit of claim 10, wherein said array of cells includes more than 4 million cells.

Claim 20

The floating gate memory integrated circuit of claim 10, wherein said first control circuit sets the plurality of drain lines to an open circuit state in said first and second voltage sequences.

Claim 21

In a floating gate memory integrated circuit, comprising an array of floating gate memory cells arranged in a plurality of rows and columns, said cells having a high threshold state in which cells are not conductive in response to a read potential applied to control gate terminals of the cells, and a low threshold state in which cells are conductive in response to a read potential applied to the control gate terminals; the array including a plurality of drain lines coupled to drain terminals of respective columns of cells, a plurality of source lines coupled to source terminals of respective columns of cells, a plurality of word lines coupled to control gate terminals of respective rows of cells, a method for setting the cells in the array in the high threshold state in parallel to the low threshold state, comprising: supplying a first voltage sequence to lower the thresholds of cells in the array by Fowler-Nordheim tunneling, the first voltage sequence including applying a negative potential to the plurality of word lines, and applying a first positive potential to the plurality of source lines, then testing the thresholds of the cells, and if all the cells are not in the low threshold state, and if a number M of times the first voltage sequence has been tried does not equal a retry limit, then retrying the first voltage sequence and the testing until all the cells are in the low threshold state, where M is greater than or equal to one, and if any of the cells are not in the low threshold state after the number M of retries of the first voltage sequence, supplying a second voltage sequence to lower the thresholds of cells in the array by Fowler-Nordheim tunneling, the second voltage sequence including applying a negative potential to the plurality of word lines, and applying a second positive potential to the plurality of source lines, then testing the thresholds of the cells, and if all the cells are not in the low threshold state, retrying the second voltage sequence and the testing until all the cells are in the low threshold state, or at least until a number of retries has been executed; wherein the first and second voltage sequences induce band-to-band tunneling current in addition to Fowler-Nordheim tunneling current, said band-to-band tunneling current characterized by a turn on threshold source potential which is inversely related to the threshold of the cell receiving said first or second voltage sequence, and said first positive voltage is set at a level which is near or above the turn on threshold source potential for higher threshold cells in the high threshold state, and less than the turn on threshold source potential for lower threshold cells in the high threshold state, and the second positive potential is set at level which is near or above the turn on threshold source potential for lower threshold cells in the high threshold state, so that band-to-band tunneling current is controlled in said first voltage sequence in the presence of higher threshold cells in the high threshold state, and the higher threshold cells in the high threshold state are lowered in threshold before said second voltage sequence to limit peak current consumption.

Claim 22

In a floating gate memory integrated circuit, comprising an array of floating gate memory cells arranged in a plurality of rows and columns, said cells having a high threshold state in which cells are not conductive in response to a read potential applied to control gate terminals of the cells, and a low threshold state in which cells are conductive in response to a read potential applied to the control gate terminals; the array including a plurality of drain lines coupled to drain terminals of respective columns of cells, a plurality of source lines coupled to source terminals of respective columns of cells, a plurality of word lines coupled to control gate terminals of respective rows of cells, a method for setting the cells in the array in the high threshold state in parallel to the low threshold state, comprising: supplying a first voltage sequence to lower the thresholds of cells in the array by Fowler-Nordheim tunneling, the first voltage sequence including applying a negative potential to the plurality of word lines, and applying a first positive potential to the plurality of source lines, then testing the thresholds of the cells, and if all the cells are not in the low threshold state, and if a number M of times the first voltage sequence has been tried does not equal a retry limit, then retrying the first voltage sequence and the testing until all the cells are in the low threshold state, where M is greater than or equal to one, and if any of the cells are not in the low threshold state after the number M of retries of the first voltage sequence, supplying a second voltage sequence to lower the thresholds of cells in the array by Fowler-Nordheim tunneling, the second voltage sequence including applying a negative potential to the plurality of word lines, and applying a second positive potential to the plurality of source lines, then testing the thresholds of the cells, and if all the cells are not in the low threshold state, retrying the second voltage sequence and the testing until all the cells are in the low threshold state, or at least until a number of retries has been executed; wherein the first and second voltage sequences induce band-to-band tunneling current in addition to Fowler-Nordheim tunneling current, said band-to-band tunneling current characterized by a turn on threshold source potential which is inversely related to the threshold of the cell receiving said first or second voltage sequence, and said first positive voltage is set at a level which is near or above the turn on threshold source potential for higher threshold cells in the high threshold state, and less than the turn on threshold source potential for lower threshold cells in the high threshold state, and the second positive potential is set at level which is near or above the turn on threshold source potential for lower threshold cells in the high threshold state, so that band-to-band tunneling current is controlled in said first voltage sequence in the presence of higher threshold cells in the high threshold state, and the higher threshold cells in the high threshold state are lowered in threshold before said second voltage sequence to limit peak current consumption.

Claim 23

The method of claim 19, wherein said first positive potential is less than 5 volts, and said second positive potential is less than 7 volts.

Claim 24

The method of claim 20, wherein said negative potential in said first voltage sequence is less than negative 6 volts.

Claim 25

The method of claim 20, wherein said negative potentials in said first voltage sequence and in said second voltage sequence are less than negative 6 volts.

Claim 26

The method of claim 19, wherein said first positive potential is between 4 and 5 volts, and said second positive potential is between 5 and 6 volts.

Claim 27

The method of claim 23, wherein said negative potentials in said first voltage sequence and in said second voltage sequence are less than negative 7 volts.

Claim 28

The method of claim 19, wherein said array of cells includes more than 250 thousand cells.

Claim 29

The method of claim 19, wherein said set of cells includes more than 4 million cells.

Claim 30

The method of claim 19, including setting plurality of drain lines to an open circuit state in said first and second voltage sequences.

Claim 31

The method of claim 19, wherein said first and second voltage sequences result in some cells having thresholds lowered below a selected limit of threshold voltages, including supplying a repair pulse to the array, during a repair time interval across the plurality of source lines and the plurality of drain lines, while setting the voltage on the plurality of word lines to a level below the selected limit.