US5698062A
Expired / Lapsed
US
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Plasma treatment apparatus and method
Assignee: Tokyo Electron Ltd
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Filing: 1995-09-25
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Granted: 1997-12-16
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Expires: 2015-09-25
Abstract
Abstract A plasma treatment apparatus comprising a chamber earthed, a vacuum pump for exhausting the chamber, a suscepter on which a wafer is mounted, a shower electrode arranged in the chamber, opposing to the suscepter, a unit for supplying plasma generating gas to the wafer on the suscepter through the shower electrode, a first radio frequency power source for adding radio frequency voltage, which has a first frequency f 1 , to both of the suscepter and the shower electrode, a second radio frequency power source for adding radio frequency voltage, which has a second frequency f 2 higher than the first frequency f 1 , at least to one of the suscepter and the shower electrode, a transformer whose primary side is connected to the first radio frequency power source and whose secondary side to first and second electrodes, and a low pass filter arranged in a circuit on the secondary side of the transformer, and serving to allow radio frequency voltage, which has the first frequency f 1 , to pass through it but to cut off radio frequency voltage, which has the second frequency f 2 , while plasma is being generated.
Inventors
- 👤 Takao Sakamoto
- 👤 Kazuhiro Tahara
- 👤 Kenji Momose
- 👤 Kosuke Imafuku
- 👤 Shosuke Endo
- 👤 Yukio Naito
- 👤 Kazuya Nagaseki
- 👤 Keizo Hirose
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:33
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/4401; C23C16/4405; C23C16/4407; C23C16/448; C23C16/4481; C23C16/4483; C23C16/4485; C23C16/4557; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; C23C16/517; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32137; H01J37/32155; H01J37/32165; H01J37/32174; H01J37/32431; H01J37/3244; H01J37/32798; H01J37/32816; H01J37/32834; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
243 words
A plasma treatment apparatus for plasma-treating a substrate in a reduced-pressure atmosphere, comprising: an electrically grounded chamber; a first electrode located inside the chamber; a second electrode located inside the chamber and facing the first electrode, said second electrode having a surface on which the substrate to be plasma-treated is placed; gas supply means for supplying a plasma generating gas into the chamber from a region where the first electrode is located; exhaust means for exhausting gas from the chamber, said exhaust means and said gas supply means controlling the chamber to have an internal pressure which is within 10 to 250 mTorr; and a plasma generating circuit for generating a high-frequency electric field between the first and second electrodes, said plasma generating circuit including: a power supply for generating a high-frequency signal which has a first frequency f 1 ; a frequency divider for deriving a high-frequency signal of a second frequency f 1 /n (n: an integer greater than 1) from the high-frequency signal of the first frequency f 1 ; a first amplifier for amplifying the high-frequency signal of the first frequency f 1 ; a second amplifier for amplifying the high-frequency signal of the second frequency f 1 /n; a first circuit for applying the amplified high-frequency signal of the first frequency f 1 to the first electrode; and a second circuit for applying the amplified high-frequency signal of the second frequency f 1 /n to the second electrode.
Claim 2
Dependent Claim
243 words
A plasma treatment apparatus for plasma-treating a substrate in a reduced-pressure atmosphere, comprising: an electrically grounded chamber; a first electrode located inside the chamber; a second electrode located inside the chamber and facing the first electrode, said second electrode having a surface on which the substrate to be plasma-treated is placed; gas supply means for supplying a plasma generating gas into the chamber from a region where the first electrode is located; exhaust means for exhausting gas from the chamber, said exhaust means and said gas supply means controlling the chamber to have an internal pressure which is within 10 to 250 mTorr; and a plasma generating circuit for generating a high-frequency electric field between the first and second electrodes, said plasma generating circuit including: a power supply for generating a high-frequency signal which has a first frequency f 1 ; a frequency divider for deriving a high-frequency signal of a second frequency f 1 /n (n: an integer greater than 1) from the high-frequency signal of the first frequency f 1 ; a first amplifier for amplifying the high-frequency signal of the first frequency f 1 ; a second amplifier for amplifying the high-frequency signal of the second frequency f 1 /n; a first circuit for applying the amplified high-frequency signal of the first frequency f 1 to the first electrode; and a second circuit for applying the amplified high-frequency signal of the second frequency f 1 /n to the second electrode.
Claim 3
Dependent Claim
14 words
The plasma treatment apparatus of claim 1 wherein f 1 is about 13.56 Mhz.
Claim 4
Dependent Claim
317 words
A plasma treatment apparatus for plasma-treating a substrate in a reduced-pressure atmosphere, comprising: an electrically grounded chamber; a first electrode located inside the chamber; a second electrode located inside the chamber and facing the first electrode, said second electrode having a surface on which the substrate to be plasma-treated is placed; gas supply means for supplying a plasma generating gas into the chamber from a region where the first electrode is located; exhaust means for exhausting gas from the chamber, said exhaust means and said gas supply means controlling the chamber to have an internal pressure which is within 10 to 250 mTorr; and a plasma generating circuit for generating a high-frequency electric field between the first and second electrodes, said plasma generating circuit including: a high-frequency signal source for generating a high-frequency signal; a phase controller for controlling a phase of the high frequency signal and producing first and second high-frequency output signals; a first circuit including a first amplifier for amplifying the first high-frequency output signal produced by phase control, said first circuit applying the amplified first high-frequency output signal to the first electrode; a second circuit including a second amplifier for amplifying the second high-frequency output signal produced by phase control, said second circuit applying the amplified second high-frequency output signal to the second electrode; and a detector for detecting products generated by chemical reaction in the chamber, and for supplying a detection signal to the phase controller, wherein said phase controller controls phases of the signals such that: in an initial period of processing, the first and second high-frequency output signals applied to the first and second electrodes have a phase difference of anisotropic etching, and when a change in the products in the chamber has reached a threshold value, the first and second high-frequency output signals applied to the first and second electrodes have a phase difference of high isotropic etching tendency.
Claim 5
Dependent Claim
317 words
A plasma treatment apparatus for plasma-treating a substrate in a reduced-pressure atmosphere, comprising: an electrically grounded chamber; a first electrode located inside the chamber; a second electrode located inside the chamber and facing the first electrode, said second electrode having a surface on which the substrate to be plasma-treated is placed; gas supply means for supplying a plasma generating gas into the chamber from a region where the first electrode is located; exhaust means for exhausting gas from the chamber, said exhaust means and said gas supply means controlling the chamber to have an internal pressure which is within 10 to 250 mTorr; and a plasma generating circuit for generating a high-frequency electric field between the first and second electrodes, said plasma generating circuit including: a high-frequency signal source for generating a high-frequency signal; a phase controller for controlling a phase of the high frequency signal and producing first and second high-frequency output signals; a first circuit including a first amplifier for amplifying the first high-frequency output signal produced by phase control, said first circuit applying the amplified first high-frequency output signal to the first electrode; a second circuit including a second amplifier for amplifying the second high-frequency output signal produced by phase control, said second circuit applying the amplified second high-frequency output signal to the second electrode; and a detector for detecting products generated by chemical reaction in the chamber, and for supplying a detection signal to the phase controller, wherein said phase controller controls phases of the signals such that: in an initial period of processing, the first and second high-frequency output signals applied to the first and second electrodes have a phase difference of anisotropic etching, and when a change in the products in the chamber has reached a threshold value, the first and second high-frequency output signals applied to the first and second electrodes have a phase difference of high isotropic etching tendency.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-15 | 2001-06-16 | 2001-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-15 | 2005-06-16 | 2005-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-15 | 2009-06-16 | 2009-12-16 | $7700.00 | Window Closed / Lapsed |