US5689123A — III-V aresenide-nitride semiconductor materials a…

Claim 1

Independent Claim 104 words

A III-V compound semiconductor material having at least nitrogen and arsenic disposed at Group V lattice sites wherein concentration of nitrogen to arsenic in said material is either less than about 5% or greater than about 90% comprising misicible regions for said material when utilizing MOCVD, said nitrogen and arsenic being proportioned at said Group V lattice sites of said material within said concentration so that said material is substantially lattice matched to a semiconductor substrate upon which said material is deposited while providing a direct bandgap level lower than the case where either the nitrogen or the arsenic is absent from the material.

Claim 2

Dependent Claim 104 words

A III-V compound semiconductor material having at least nitrogen and arsenic disposed at Group V lattice sites wherein concentration of nitrogen to arsenic in said material is either less than about 5% or greater than about 90% comprising misicible regions for said material when utilizing MOCVD, said nitrogen and arsenic being proportioned at said Group V lattice sites of said material within said concentration so that said material is substantially lattice matched to a semiconductor substrate upon which said material is deposited while providing a direct bandgap level lower than the case where either the nitrogen or the arsenic is absent from the material.

Claim 3

Dependent Claim 21 words

The semiconductor material of claim 1 wherein nitrogen atoms are present at at least 2% of the group V lattice sites.

Claim 4

Dependent Claim 22 words

The semiconductor material of claim 1 wherein the As-to-N ratio in said direct bandgap material is selected to produce said lattice match.

Claim 5

Dependent Claim 20 words

The semiconductor material of claim 1 wherein said direct bandgap material is lattice matched to said substrate due to strain.

Claim 6

Dependent Claim 25 words

The semiconductor material of claim 1 wherein said substrate is selected from the group consisting of GaP, Si, GaAs, Ge, SiC, ZnSe, ZnO and diamond.

Claim 7

Dependent Claim 140 words

A III-V semiconductor single crystal composite material comprising: a series of layers having nitrogen and at least one other Group V atomic species disposed at Group V lattice sites in said series of layers, said series of layers containing nitrogen in one set of said layers and said least one other Group V atomic species in another set of said layers, said layers being sufficiently thin in the monolayer regime to avoid formation of defects, said layer sets arranged with their overall nitrogen to the other Group V atomic species ratio to substantially provide lattice match of said composite material layers to a crystalline substrate while providing an overall direct bandgap level for the combined series of layers lower than the case where either the nitrogen or said least one other Group V atomic species is absent from the layers.

Claim 8

Dependent Claim 140 words

A III-V semiconductor single crystal composite material comprising: a series of layers having nitrogen and at least one other Group V atomic species disposed at Group V lattice sites in said series of layers, said series of layers containing nitrogen in one set of said layers and said least one other Group V atomic species in another set of said layers, said layers being sufficiently thin in the monolayer regime to avoid formation of defects, said layer sets arranged with their overall nitrogen to the other Group V atomic species ratio to substantially provide lattice match of said composite material layers to a crystalline substrate while providing an overall direct bandgap level for the combined series of layers lower than the case where either the nitrogen or said least one other Group V atomic species is absent from the layers.

Claim 9

Dependent Claim 19 words

The composite material of claim 6 wherein at least one layer of said composite material has a direct bandgap.

Claim 10

Dependent Claim 28 words

The composite material of claim 6 wherein said thin layers are composed of In w Al x Ga 1-x-w N and In w Al x Ga 1-x-w As.

Claim 11

Dependent Claim 21 words

The composite material of claim 6 wherein at least one of said layers in said series of layers is a monolayer.

Claim 12

Dependent Claim 26 words

The composite material of claim 6 wherein said substrate is selected from the group consisting of GaP, Si, GaAs, Ge, InN, SiC, ZnSe, ZnO and diamond.

Claim 13

Dependent Claim 59 words

The composite material of claim 6 wherein the material has a composition selected such that a lattice constant of said material is less than 1% different from a lattice constant of said crystalline substrate selected from the group consisting of GaP, Si, GaAs, Ge, InN, ZnSe, ZnO and diamond so that said material and said substrate are lattice matched.

Claim 14

Dependent Claim 59 words

The composite material of claim 6 having a composition selected such that a lattice constant of the material is greater than 1% different than a lattice constant of said crystalline substrate selected from the group consisting of GaP, Si, GaAs, Ge, InN, SiC, ZnSe, ZnO and diamond so that said material and said substrate are lattice matched under strain.

Claim 15

Dependent Claim 130 words

A compound III-V semiconductor material having an overall composition with at least one element from the group consisting of B, Al, Ga and In disposed at Group III lattice sites, and a concentration of both nitrogen atoms and arsenic atoms at Group V lattice sites, the number of nitrogen and arsenic atoms present at the Group V lattice sites within an immiscible region for arsenide-nitride material, said material comprises a series of layers of III-V semiconductor compounds, one set of said layers in said series having a substantial concentration of nitrogen atoms over arsenic atoms, another set of said layers in said series having a significant concentration of arsenic atom over nitrogen atoms, each of said layers being sufficiently thin to avoid the formation of defects due to mismatched lattices.

Claim 16

Dependent Claim 130 words

A compound III-V semiconductor material having an overall composition with at least one element from the group consisting of B, Al, Ga and In disposed at Group III lattice sites, and a concentration of both nitrogen atoms and arsenic atoms at Group V lattice sites, the number of nitrogen and arsenic atoms present at the Group V lattice sites within an immiscible region for arsenide-nitride material, said material comprises a series of layers of III-V semiconductor compounds, one set of said layers in said series having a substantial concentration of nitrogen atoms over arsenic atoms, another set of said layers in said series having a significant concentration of arsenic atom over nitrogen atoms, each of said layers being sufficiently thin to avoid the formation of defects due to mismatched lattices.

Claim 17

Dependent Claim 142 words

A compound semiconductor material having a zinc blende crystal lattice and an overall composition with at least one dement from the group consisting of B, Al, Ga and In disposed at group III lattice sites, and also including a concentration of N atoms of at least 2% disposed at group V lattice sites and a concentration of As atoms of at least 2% disposed at group V lattice sites, said compound semiconductor material comprising a direct bandgap material composed of In w Al x Ga 1-x-w As 1-y-z P z N y , where 0≦w≦1, 0≦x≦1, 0.02≦y≦0.98, 0≦z≦0.96 and 0.02≦1-y-z≦0.98, w, x, y, and z being chosen such that a lattice constant of the material is substantially matched with a lattice constant of a semiconductor substrate selected from the group consisting of GaP, Si, GaAs, Ge, InN, SiC, ZnSe, ZnO and diamond.

Claim 18

Dependent Claim 142 words

A compound semiconductor material having a zinc blende crystal lattice and an overall composition with at least one dement from the group consisting of B, Al, Ga and In disposed at group III lattice sites, and also including a concentration of N atoms of at least 2% disposed at group V lattice sites and a concentration of As atoms of at least 2% disposed at group V lattice sites, said compound semiconductor material comprising a direct bandgap material composed of In w Al x Ga 1-x-w As 1-y-z P z N y , where 0≦w≦1, 0≦x≦1, 0.02≦y≦0.98, 0≦z≦0.96 and 0.02≦1-y-z≦0.98, w, x, y, and z being chosen such that a lattice constant of the material is substantially matched with a lattice constant of a semiconductor substrate selected from the group consisting of GaP, Si, GaAs, Ge, InN, SiC, ZnSe, ZnO and diamond.

Claim 19

Dependent Claim 11 words

The semiconductor material of claim 14 wherein w=0, z=0 and 0.14≦y≦0.20.

Claim 20

Dependent Claim 11 words

The semiconductor material of claim 14 wherein w=0, z>0 and 0.02≦y≦0.10.

Claim 21

Dependent Claim 11 words

The semiconductor material of claim 14 wherein w>0, z=0 and 0.14≦y≦0.27.

Claim 22

Dependent Claim 8 words

The semiconductor material of claim 14 wherein y≦0.90.

Claim 23

Dependent Claim 10 words

The semiconductor material of claim 14 wherein w>0 and y≦0.05.

Claim 24

Dependent Claim 189 words

A semiconductor compound comprising a zinc-blende crystal material composed of a sequence of thin semiconductor compound layers in the monolayer regime disposed on top of one another, each thin layer in said sequence having at least one element from the group consisting of Al, B, Ga and In atoms disposed at Group III lattice sites and at least one element from the group consisting of As, P and N atoms disposed at Group V lattice sites, one set of said monolayer regime layers in said sequence having a substantial proportion of N atoms disposed at said Group V lattice sites and another set of said monolayer regime layers in said sequence having a substantial portion of As atoms disposed at said Group V lattice sites, said sets of layers sequentially chosen to provide a lattice constant that is less than 1% different from a lattice constant of a crystalline substrate upon which said monolayer regime layers are deposited while providing an overall direct bandgap level for the combined series of monolayer regime layers lower than the case where either the N or the As is absent from the material.

Claim 25

Dependent Claim 189 words

A semiconductor compound comprising a zinc-blende crystal material composed of a sequence of thin semiconductor compound layers in the monolayer regime disposed on top of one another, each thin layer in said sequence having at least one element from the group consisting of Al, B, Ga and In atoms disposed at Group III lattice sites and at least one element from the group consisting of As, P and N atoms disposed at Group V lattice sites, one set of said monolayer regime layers in said sequence having a substantial proportion of N atoms disposed at said Group V lattice sites and another set of said monolayer regime layers in said sequence having a substantial portion of As atoms disposed at said Group V lattice sites, said sets of layers sequentially chosen to provide a lattice constant that is less than 1% different from a lattice constant of a crystalline substrate upon which said monolayer regime layers are deposited while providing an overall direct bandgap level for the combined series of monolayer regime layers lower than the case where either the N or the As is absent from the material.

Claim 26

Dependent Claim 38 words

The semiconductor compound of claim 20 wherein after deposition of said sequence of thin layers, said crystal lattice material has been heated such that an appreciable number of atoms in each thin layer have diffused into adjoining layers.

Claim 27

Dependent Claim 158 words

A III-V semiconductor material having at least one element from the group consisting of Al, Ga and In disposed at Group III lattice sites, and having at least nitrogen and arsenic disposed at Group V lattice sites, other elements which can be disposed at said Group V lattice sites being selectable from the group consisting of P and Sb, the concentration of nitrogen at said Group V lattice sites either about 5% or less or about 90% or more comprising a miscible region for said material when utilizing MOCVD, said nitrogen and arsenic being proportioned at said Group V lattice sites of said material within said nitrogen concentration so that said material is substantially lattice matched to a semiconductor substrate upon which said material is deposited, said nitrogen being chosen to achieve a specified energy gap reduction relative to the energy gap of comparable III-V semiconductor material where nitrogen is at 100% of said group V lattice sites.

Claim 28

Dependent Claim 158 words

A III-V semiconductor material having at least one element from the group consisting of Al, Ga and In disposed at Group III lattice sites, and having at least nitrogen and arsenic disposed at Group V lattice sites, other elements which can be disposed at said Group V lattice sites being selectable from the group consisting of P and Sb, the concentration of nitrogen at said Group V lattice sites either about 5% or less or about 90% or more comprising a miscible region for said material when utilizing MOCVD, said nitrogen and arsenic being proportioned at said Group V lattice sites of said material within said nitrogen concentration so that said material is substantially lattice matched to a semiconductor substrate upon which said material is deposited, said nitrogen being chosen to achieve a specified energy gap reduction relative to the energy gap of comparable III-V semiconductor material where nitrogen is at 100% of said group V lattice sites.

Claim 29

Dependent Claim 55 words

The semiconductor material of claim 22 wherein the material is a mixed crystal composed of Al x Ga y In 1-x-y Sb m As n P p N 1-m-n-p , where x and y range from 0 to 1, m and p range from 0 to 0.48, n ranges from 0.02 to 0.50 and 1-m-n-p≧0.50.

Claim 30

Dependent Claim 14 words

The semiconductor material of claim 22 wherein said material is a direct bandgap material.

Claim 31

Dependent Claim 13 words

The semiconductor material of claim 22 wherein said material has a cubic structure.

Claim 32

Dependent Claim 13 words

The semiconductor material of claim 22 wherein said material has a wurtzite structure.

Claim 33

Dependent Claim 27 words

The semiconductor material of claim 22 wherein said material is composed of a plurality of thin layers, each thinner than a critical thickness to avoid defect formation.

Claim 34

Dependent Claim 40 words

The semiconductor material of claim 27 wherein each of said thin layers contains both nitrogen and at least one other element from the group consisting of P, As and Sb disposed at the group V lattice sites of said layers.

Claim 35

Dependent Claim 16 words

The semiconductor material of claim 28 wherein said plurality of thin layers forms a semiconductor heterostructure.

Claim 36

Dependent Claim 16 words

The semiconductor material of claim 28 wherein at least one of said thin layers is strained.

Claim 37

Dependent Claim 27 words

The semiconductor material of claim 30 wherein at least one strained layer has at least Ga and N at respective group III and group V lattice sites.

Claim 38

Dependent Claim 22 words

The semiconductor material of claim 30 wherein the remainder of said thin layers are substantially lattice matched to a single crystal substrate.

Claim 39

Dependent Claim 54 words

The semiconductor material of claim 27 wherein said thin layers contain substantially all nitrogen at group V lattice sites in a first set of layers and substantially all of said at least one other element at said group V lattice sites in a second set of layers intermixed with said first set of layers.

Claim 40

Dependent Claim 32 words

The semiconductor material of claim 33 wherein the overall composite of said intermixed first and second sets of thin layers is lattice matched to a single crystal substrate to within about 3%.

Claim 41

Dependent Claim 18 words

The semiconductor material of claim 22 further comprising a single crystal substrate upon which said material is formed.

Claim 42

Dependent Claim 18 words

The semiconductor material of claim 35 wherein said material is substantially lattice matched to said single crystal substrate.

Claim 43

Dependent Claim 14 words

The semiconductor material of claim 35 wherein said substrate is an indirect bandgap material.

Claim 44

Dependent Claim 137 words

A III-V semiconductor material having at least one element from the group consisting of Al, Ga and In disposed at group III lattice sites, and having at least nitrogen and arsenic disposed at group V lattice sites, other elements which can be disposed at the group V lattice sites being selectable from the group consisting of P and Sb, the concentration of nitrogen being at least 50% of the group V lattice sites and the concentration of arsenic and each other element at said group V lattice sites being chosen to achieve a specified energy gap reduction relative to comparable material with nitrogen at 100% of said group V lattice sites, a single crystal substrate upon which said material is formed being selected from the group consisting of InN, ZnO, SiC and Al 2 O 3 .

Claim 45

Dependent Claim 137 words

A III-V semiconductor material having at least one element from the group consisting of Al, Ga and In disposed at group III lattice sites, and having at least nitrogen and arsenic disposed at group V lattice sites, other elements which can be disposed at the group V lattice sites being selectable from the group consisting of P and Sb, the concentration of nitrogen being at least 50% of the group V lattice sites and the concentration of arsenic and each other element at said group V lattice sites being chosen to achieve a specified energy gap reduction relative to comparable material with nitrogen at 100% of said group V lattice sites, a single crystal substrate upon which said material is formed being selected from the group consisting of InN, ZnO, SiC and Al 2 O 3 .

Claim 46

Dependent Claim 148 words

A high temperature electronic device comprising: a semiconductor crystal substrate, a structure disposed on said substrate of at least one III-V semiconductor material layer including N atoms and As atoms at Group V lattice sites with said N atoms at said Group V lattice sites within the range of either about 5% or less than or about 90% or more than said As atoms, said N atoms and As atoms being proportioned at said Group V sites of said material layer so as to be substantially..lattice matched to said substrate while providing a direct bandgap level lower than the case where either the nitrogen or the arsenic is absent from the structure, said structure having p-type and n-type dopants therein defining at least one p-n junction, and means for applying electrical voltage and current to selected regions of said structure associated with said at least one p-n junction.

Claim 47

Dependent Claim 148 words

A high temperature electronic device comprising: a semiconductor crystal substrate, a structure disposed on said substrate of at least one III-V semiconductor material layer including N atoms and As atoms at Group V lattice sites with said N atoms at said Group V lattice sites within the range of either about 5% or less than or about 90% or more than said As atoms, said N atoms and As atoms being proportioned at said Group V sites of said material layer so as to be substantially..lattice matched to said substrate while providing a direct bandgap level lower than the case where either the nitrogen or the arsenic is absent from the structure, said structure having p-type and n-type dopants therein defining at least one p-n junction, and means for applying electrical voltage and current to selected regions of said structure associated with said at least one p-n junction.

Claim 48

Dependent Claim 22 words

The device of claim 39 wherein at least one III-V semiconductor material layer of said structure is a direct bandgap material layer.

Claim 49

Dependent Claim 25 words

The device of claim 39 wherein said structure has a lattice constant that is less than 1% different from a lattice constant of said substrate.

Claim 50

Dependent Claim 16 words

The device of claim 39 wherein said structure is lattice matched to said substrate under strain.

Claim 51

Dependent Claim 30 words

The compound III-V semiconductor material of claim 13 wherein nitrogen is the majority component in the Group V sites with up to about 20% arsenic at said Group V sites.

Claim 52

Dependent Claim 22 words

The compound III-V semiconductor material of claim 13 wherein nitrogen at said Group V sites is between about 5% and about 90%.

Claim 53

Dependent Claim 21 words

The compound III-V semiconductor material of claim 13 wherein said nitrogen concentration layers and said arsenic concentration layers are interspersed monolayers.

Claim 54

Dependent Claim 21 words

The compound III-V semiconductor material of claim 45 wherein there is about five monolayers of GaAs for every monolayer of GaN.

Claim 55

Dependent Claim 33 words

The compound III-V semiconductor material of claim 46 wherein said sets of layers result in an overall Group V lattice site concentration of nitrogen of approximately 17% and of arsenic of approximately 83%.

Claim 56

Dependent Claim 21 words

The compound III-V semiconductor material of claim 13 wherein said series of layers is grown by low-pressure metal organic vapor deposition.

Claim 57

Dependent Claim 24 words

The compound III-V semiconductor material of claim 48 wherein a nitrogen source used in said deposition is hydra fine, phenol-hyrazine or metal organic source.

Claim 58

Dependent Claim 29 words

The compound III-V semiconductor material of claim 48 wherein nitrogen source used in said deposition is ammonia in combination with a catalyst to enhance the cracking efficiency of ammonia.

Claim 59

Dependent Claim 15 words

The compound III-V semiconductor material of claim 50 wherein said catalyst is arsine or phosphine.

Claim 60

Dependent Claim 135 words

A compound III-V semiconductor material having an overall composition with at least one element from the group consisting of B, Al, Ga and In disposed at Group III lattice sites, and also including a concentration of both nitrogen atoms and arsenic atoms at Group V lattice sites, the number of nitrogen atoms present at the Group V lattice sites is in an immiscible region for arsenide-nitride material, said material comprises a series of layers of III-V semiconductor compounds, one set of said layers in said series having a substantial concentration of nitrogen atoms over arsenic atoms, another set of said layers in said series having a substantial concentration of arsenic atoms over nitrogen atoms, each of said layers being sufficiently thin within the monolayer regime to avoid the formation of defects due to mismatched lattices.

Claim 61

Dependent Claim 135 words

A compound III-V semiconductor material having an overall composition with at least one element from the group consisting of B, Al, Ga and In disposed at Group III lattice sites, and also including a concentration of both nitrogen atoms and arsenic atoms at Group V lattice sites, the number of nitrogen atoms present at the Group V lattice sites is in an immiscible region for arsenide-nitride material, said material comprises a series of layers of III-V semiconductor compounds, one set of said layers in said series having a substantial concentration of nitrogen atoms over arsenic atoms, another set of said layers in said series having a substantial concentration of arsenic atoms over nitrogen atoms, each of said layers being sufficiently thin within the monolayer regime to avoid the formation of defects due to mismatched lattices.

Claim 62

Dependent Claim 28 words

The compound III-V semiconductor material of claim 52 wherein arsenic is the majority component in the Group V sites with above 5% nitrogen at said Group V sites.

Claim 63

Dependent Claim 114 words

A compound III-V semiconductor material comprising: an overall composition with at least one element from the group consisting of B, Al, Ga and In disposed at Group III lattice sites, and a concentration of both N atoms and As atoms at Group V lattice sites, the concentration of N atoms at said Group V lattice sites within a range of either about 5% or less than or about 90% or more than said As atoms, said N atoms and As atoms being proportioned at the Group V sites so as to be substantially lattice matched to said substrate and to reduce the direct bandgap to a desired level within said N atom concentration range.

Claim 64

Dependent Claim 114 words

A compound III-V semiconductor material comprising: an overall composition with at least one element from the group consisting of B, Al, Ga and In disposed at Group III lattice sites, and a concentration of both N atoms and As atoms at Group V lattice sites, the concentration of N atoms at said Group V lattice sites within a range of either about 5% or less than or about 90% or more than said As atoms, said N atoms and As atoms being proportioned at the Group V sites so as to be substantially lattice matched to said substrate and to reduce the direct bandgap to a desired level within said N atom concentration range.

Claim 65

Dependent Claim 22 words

The compound III-V semiconductor material of claim 54 wherein said arsenide-nitride compound is GaAsN, InAsN, GaPN, InPN, InGaAsN, AlGaN, AlGaAsN or AlGaInAsN.

Claim 66

Dependent Claim 26 words

The compound III-V semiconductor material of claim 54 wherein said arsenide-nitride compound comprises GaAs 1-x N x or InAs 1-x N x where x≦0.5 or x≦0.9.

Claim 67

Dependent Claim 23 words

The compound III-V semiconductor material of claim 54 wherein said arsenide-nitride compound is lattice matched to a substrate comprising GaAs, ZnO or SiC.

Claim 68

Dependent Claim 20 words

The compound III-V semiconductor material of claim 54 wherein said arsenide-nitride compound is utilized in a heterostructure light emitting device.

Claim 69

Dependent Claim 17 words

The compound III-V semiconductor material of claim 58 wherein said heterostructure comprises AlGaN, AlGaAsN, AlGaInAsN or SiC.

Claim 70

Dependent Claim 46 words

The compound III-V semiconductor material of claim 58 wherein inclusion of As atoms, P atoms or Sb atoms at Group V lattice sites in a layer of said heterostructure light emitting device comprising an active region having a bandgap chosen within said N atom concentration range.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2000-11-17	2001-05-19	2001-11-18	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2004-11-17	2005-05-19	2005-11-18	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2008-11-17	2009-05-19	2009-11-18	$7700.00	Window Closed / Lapsed

III-V aresenide-nitride semiconductor materials and devices

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