Method for providing known good bare semiconductor die

Claim 1

A method for testing, evaluating, and providing known good bare die, comprising the steps of: providing an integrated circuit die having a bond pad affixed thereto for electrical communication with the integrated circuit; affixing an electrically conductive material onto the die bond pad, the material forming a bump dimensioned for diffusion bonding a lead thereto; providing a test lead; Thermosonic diffusion bonding a portion of the test lead to the bump, the test lead made from an electrically conductive material capable of forming a diffusion bond with the bump material, the diffusion bonding sufficient for providing electrical contact between the lead and the die bond pad during steps of electrically testing the die, the diffusion bonding sufficient for permitting mechanically removing the test lead bonded portion from the bump wherein damage to the bump permits subsequent wire bonding directly thereto; and mechanically removing the test lead including the bonded portion from the bump for providing a known good bare die.

Claim 2

A method for testing, evaluating, and providing known good bare die, comprising the steps of: providing an integrated circuit die having a bond pad affixed thereto for electrical communication with the integrated circuit; affixing an electrically conductive material onto the die bond pad, the material forming a bump dimensioned for diffusion bonding a lead thereto; providing a test lead; Thermosonic diffusion bonding a portion of the test lead to the bump, the test lead made from an electrically conductive material capable of forming a diffusion bond with the bump material, the diffusion bonding sufficient for providing electrical contact between the lead and the die bond pad during steps of electrically testing the die, the diffusion bonding sufficient for permitting mechanically removing the test lead bonded portion from the bump wherein damage to the bump permits subsequent wire bonding directly thereto; and mechanically removing the test lead including the bonded portion from the bump for providing a known good bare die.

Claim 7

A method for testing, evaluating, and providing known good die, comprising the steps of: providing a semiconductor wafer having a plurality of integrated circuit die, each die having a plurality of bond pads affixed to a surface of each die; plating electrically conductive bumps onto each die bond pad; cutting the wafer into individual die; providing a TAB (tape automated bonding) tape having conductive test leads for electrical connection to the die bond pads; Thermosonic diffusion bonding portion of each test lead to selected bumps, the diffusion bonding sufficient for making electrical contact between the tape leads and the die bond pads during burn-in and testing of the die, the diffusion bonding providing an electrical connection sufficient for testing and measuring operational features of the die integrated circuit, the diffusion bonding further sufficient for permitting mechanical removal of the leads from the bumps for subsequent wire bonding directly thereto without reforming the bump; electrically screening the die by operating each die at a required performance level for verifying that the die is operating to within the required performance level; and mechanically removing the test leads including each test lead bonded portion from the bumps for providing a known good bare die.

Claim 8

A method for testing, evaluating, and providing known good die, comprising the steps of: providing a semiconductor wafer having a plurality of integrated circuit die, each die having a plurality of bond pads affixed to a surface of each die; plating electrically conductive bumps onto each die bond pad; cutting the wafer into individual die; providing a TAB (tape automated bonding) tape having conductive test leads for electrical connection to the die bond pads; Thermosonic diffusion bonding portion of each test lead to selected bumps, the diffusion bonding sufficient for making electrical contact between the tape leads and the die bond pads during burn-in and testing of the die, the diffusion bonding providing an electrical connection sufficient for testing and measuring operational features of the die integrated circuit, the diffusion bonding further sufficient for permitting mechanical removal of the leads from the bumps for subsequent wire bonding directly thereto without reforming the bump; electrically screening the die by operating each die at a required performance level for verifying that the die is operating to within the required performance level; and mechanically removing the test leads including each test lead bonded portion from the bumps for providing a known good bare die.

Claim 12

A method for testing, evaluating, and providing known good bare die, the method comprising the steps of: providing a wafer having a plurality of semiconductor die affixed to a surface of the wafer, each die having a plurality of bond pads on a surface of the die; plating conductive bumps onto each bond pad, the plating covering the pad for providing electrical contact with the pad, the bumps of a material capable of forming a diffusion bond with test leads; cutting the wafer into individual die for diffusion bonding test leads to the bumps; providing a TAB tape having test leads adapted for electrical connection to a selected die bond pad; Thermosonic diffusion bonding a portion of each selected test lead to corresponding bumps, the diffusion bonding sufficient to insure electrical connection is maintained between the test leads and the bumps during burn-in and testing, and further permitting the tape leads to be released from the bumps without effective damage to the bumps; attaching test devices to the leads; electrically testing and operating the die for identifying a known good die; and mechanically removing the test leads including the bonded portion from the bumps by lifting each lead from each bump for providing the known good bare die.

Claim 13

A method for testing, evaluating, and providing known good bare die, the method comprising the steps of: providing a wafer having a plurality of semiconductor die affixed to a surface of the wafer, each die having a plurality of bond pads on a surface of the die; plating conductive bumps onto each bond pad, the plating covering the pad for providing electrical contact with the pad, the bumps of a material capable of forming a diffusion bond with test leads; cutting the wafer into individual die for diffusion bonding test leads to the bumps; providing a TAB tape having test leads adapted for electrical connection to a selected die bond pad; Thermosonic diffusion bonding a portion of each selected test lead to corresponding bumps, the diffusion bonding sufficient to insure electrical connection is maintained between the test leads and the bumps during burn-in and testing, and further permitting the tape leads to be released from the bumps without effective damage to the bumps; attaching test devices to the leads; electrically testing and operating the die for identifying a known good die; and mechanically removing the test leads including the bonded portion from the bumps by lifting each lead from each bump for providing the known good bare die.

Claim 17

A method for providing known good die, comprising the steps of: providing a semiconductor wafer having a plurality of integrated circuit die affixed to a surface of the wafer, each die having a plurality of aluminum bond pads affixed to a surface of the die; plating gold bumps onto each die bond pad; cutting the wafer into individual die for bonding of the die to gold test leads; providing a TAB tape having a gold test lead adapted for connecting the test lead to a die bond pad bump, the test lead providing electrical contact with a die testing device; Thermosonic diffusion bonding a portion of the test lead to the gold bump for making electrical contact therewith during burn-in and testing of the die, the diffusion bonding of the test lead portion sufficient for permitting removal of the test lead portion from the bump without deformation of the bump during lifting of the lead from the bump for removal of the die from the TAB tape; affixing a test device to the lead; testing the die for providing a known good bare die; mechanically removing the test lead including the bonded portion from the gold bump for removing the die from the TAB tape; and providing a known good bare die useable without the need for reform the gold bump for wire bonding to a circuit module.

Claim 18

A method for providing known good die, comprising the steps of: providing a semiconductor wafer having a plurality of integrated circuit die affixed to a surface of the wafer, each die having a plurality of aluminum bond pads affixed to a surface of the die; plating gold bumps onto each die bond pad; cutting the wafer into individual die for bonding of the die to gold test leads; providing a TAB tape having a gold test lead adapted for connecting the test lead to a die bond pad bump, the test lead providing electrical contact with a die testing device; Thermosonic diffusion bonding a portion of the test lead to the gold bump for making electrical contact therewith during burn-in and testing of the die, the diffusion bonding of the test lead portion sufficient for permitting removal of the test lead portion from the bump without deformation of the bump during lifting of the lead from the bump for removal of the die from the TAB tape; affixing a test device to the lead; testing the die for providing a known good bare die; mechanically removing the test lead including the bonded portion from the gold bump for removing the die from the TAB tape; and providing a known good bare die useable without the need for reform the gold bump for wire bonding to a circuit module.