Patent US5674356A successfully refreshed from Google Patents.
US5674356A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a semiconductor device in which an anti reflective layer is formed by varying the composition thereof
Assignee: Sony Corp
•
Filing: 1995-04-04
•
Granted: 1997-10-07
•
Expires: 2015-04-04
Abstract
Abstract A method for producing a semiconductor device in which dry etching properties are rendered compatible with satisfactory anti-reflection characteristics in far-infrared lithography. An anti-reflective layer 6 is made up of a lower anti-reflective layer 6 L of SiO X having a relatively low Si ratio and an upper anti-reflective layer 6 H of SiO X having a relatively high Si ratio. After forming a resist pattern 7, the upper anti-reflective layer 6 H and the lower anti-reflective layer 6 U are etched using the etching conditions for Si and those for SiO X , respectively. Such variation in the Si ratio along the film thickness is realized by controlling the CVD film-forming conditions or Si + ion implantation. Since the upper anti-reflective layer 6 H has a refractive index higher than that of the lower anti-reflective layer 6 L of SiO X , the standing wave suppression effect is improved. Since the films 6 U , 6 L are etched under respective optimum conditions, shape anisotropy may be realized. Film formation is not difficult to achieve because the elementary composition of the anti-reflective layer 6 on the whole is uniform.
Inventors
- 👤 Tetsuji Nagayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:24
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H; H10; H10P; H10P95/00; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; Y; Y10; Y10S; Y10S430/00; Y10S430/151; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
94 words
A method for producing a semiconductor device comprising: providing an anti-reflective layer presenting a variation in the composition of a constituent element along the film thickness over a semiconductor substrate, said anti-reflective layer being formed by a vapor phase deposition method and the variation in the composition being achieved by controlling the film forming atmosphere, the anti-reflective layer having a silicone-rich upper layer portion; forming a pattern resist on said anti-reflective layer; and dry-etching said anti-reflective layer under etching conditions conforming to the variation of the composition, using said pattern resist as a mask.
Claim 2
Independent Claim
94 words
A method for producing a semiconductor device comprising: providing an anti-reflective layer presenting a variation in the composition of a constituent element along the film thickness over a semiconductor substrate, said anti-reflective layer being formed by a vapor phase deposition method and the variation in the composition being achieved by controlling the film forming atmosphere, the anti-reflective layer having a silicone-rich upper layer portion; forming a pattern resist on said anti-reflective layer; and dry-etching said anti-reflective layer under etching conditions conforming to the variation of the composition, using said pattern resist as a mask.
Claim 3
Independent Claim
116 words
A method for producing a semiconductor device comprising: providing an anti-reflective layer presenting a variation in composition of a constituent element along the film thickness over a semiconductor substrate, said anti-reflective layer being formed by a vapor phase deposition method and the variation of the composition being achieved by controlling the film forming atmosphere, the anti-reflective layer being a film formed of a silicon compound and having a silicon ratio in the composition thereof which increases proceeding from its lower layer portion towards its upper layer portion; forming a pattern resist on said anti-reflective layer; and dry-etching said anti-reflective layer under conditions conforming to the variation in the composition, using said pattern resist as a mask.
Claim 4
Independent Claim
116 words
A method for producing a semiconductor device comprising: providing an anti-reflective layer presenting a variation in composition of a constituent element along the film thickness over a semiconductor substrate, said anti-reflective layer being formed by a vapor phase deposition method and the variation of the composition being achieved by controlling the film forming atmosphere, the anti-reflective layer being a film formed of a silicon compound and having a silicon ratio in the composition thereof which increases proceeding from its lower layer portion towards its upper layer portion; forming a pattern resist on said anti-reflective layer; and dry-etching said anti-reflective layer under conditions conforming to the variation in the composition, using said pattern resist as a mask.
Claim 5
Dependent Claim
35 words
The method as claimed in claim 1 or 2 wherein the anti-reflective layer has a composition so selected that its upper layer portion has a refractive index higher than that of its lower layer portion.
Claim 6
Dependent Claim
30 words
The method as claimed in claim 1 or 2 wherein the anti-reflective layer is a film formed of a silicon compound and having a composition with a variable silicon ratio.
Claim 7
Dependent Claim
39 words
The method as claimed in claim 1 or 2 wherein the anti-reflective layer is a film of a silicon compound selected from the group consisting of SiO X , SiN x and Si x O y N z .
Claim 8
Dependent Claim
51 words
The method as claimed in claim 1 or 2 wherein the anti-reflective layer is a film having a low refractive index area and a high refractive index area formed on the low refractive index area, said higher refractive index area having a refractive index higher than that of the resist film.
Claim 9
Independent Claim
103 words
A method for producing a semiconductor device comprising: providing an anti-reflective layer presenting a variation in the composition of a constituent element along the film thickness over a semiconductor substrate, said variation in the constituent element being provided by an ion implantation on a previously formed ant-reflective layer, the anti-reflective layer having a composition so selected that its upper layer portion has a refractive index that is higher than that of its lower layer portion; forming a pattern resist on said anti-reflective layer; dry-etching said anti-reflective layer under etching conditions conforming to the variation in composition, using said pattern resist as a mask.
Claim 10
Independent Claim
103 words
A method for producing a semiconductor device comprising: providing an anti-reflective layer presenting a variation in the composition of a constituent element along the film thickness over a semiconductor substrate, said variation in the constituent element being provided by an ion implantation on a previously formed ant-reflective layer, the anti-reflective layer having a composition so selected that its upper layer portion has a refractive index that is higher than that of its lower layer portion; forming a pattern resist on said anti-reflective layer; dry-etching said anti-reflective layer under etching conditions conforming to the variation in composition, using said pattern resist as a mask.
Claim 11
Dependent Claim
32 words
The method as claimed in claim 7, wherein the anti-reflective layer is a film formed of a silicon compound having the same elements but having a composition with a variable silicon ratio.
Claim 12
Independent Claim
85 words
A method for producing a semiconductor device comprising: providing an anti-reflective layer presenting a variation in the composition of a constituent element along the film thickness over a semiconductor substrate said variation in the constituent element being provided by an ion implantation on a previously formed anti-reflective layer, the anti-reflective layer having a silicon-rich upper layer portion; forming a pattern resist on said anti-reflective layer; dry-etching said anti-reflective layer under etching conditions conforming to the variation in composition using said pattern resist as a mask.
Claim 13
Independent Claim
85 words
A method for producing a semiconductor device comprising: providing an anti-reflective layer presenting a variation in the composition of a constituent element along the film thickness over a semiconductor substrate said variation in the constituent element being provided by an ion implantation on a previously formed anti-reflective layer, the anti-reflective layer having a silicon-rich upper layer portion; forming a pattern resist on said anti-reflective layer; dry-etching said anti-reflective layer under etching conditions conforming to the variation in composition using said pattern resist as a mask.
Claim 14
Dependent Claim
39 words
The method as claimed in claim 9 wherein the anti-reflective layer is a film formed of a silicon compound and having a silicon ratio in the composition thereof increased from its lower layer portion towards its upper layer portion.
Claim 15
Dependent Claim
29 words
The method as claimed in claim 7 or 9 wherein the anti-reflective layer is a film of silicon compound having the formula Si x O y N z .
Claim 16
Dependent Claim
49 words
The method as claimed in claim 7 wherein the anti-reflective layer is a film having a low refractive index area and a high refractive index area formed on the low refractive index area, said higher refractive index area having a refractive index higher than that of the resist film.
References Cited (Backward Citations)
US4145457A
Cited
US4070689A
Cited
US4541892A
Cited
US4680742A
Cited
US4592129A
Cited
JPS62104081A
Cited
JPS6371801A
Cited
JPS6379322A
Cited
US4837044A
Cited
US4793897A
Cited
US4978420A
Cited
US5076674A
Cited
US5286608A
Cited
US5378659A
Cited
US5580701A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-06 | 2001-04-07 | 2001-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-06 | 2005-04-07 | 2005-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-06 | 2009-04-07 | 2009-10-07 | $7700.00 | Window Closed / Lapsed |