US5672905A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor fuse and method
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1992-08-26
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Granted: 1997-09-30
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Expires: 2012-08-26
Abstract
Abstract A semiconductor fuse and method for fabricating the same An insulating layer is provided and a trench formed therein. A fusible link is then formed across the insulating layer and trench and conformal therewith. The link has a break region of minimum thickness and width at an intersection of a sidewall and bottom surface of the trench.
Inventors
- 👤 Steven S. Lee
- 👤 Gayle W. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 11:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; H10W20/40; H10W20/49; H10W20/493
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
69 words
A method for fabricating a semiconductor fuse, comprising: providing an insulating layer; forming, in said insulating layer, a trench having a depth that is greater than its length, and having sidewalls and a bottom surface; and forming a fusible link across said layer and trench and conformal therewith, said link having a break region of minimum thickness and width at an intersection of said sidewall and said bottom surface.
Claim 2
Independent Claim
69 words
A method for fabricating a semiconductor fuse, comprising: providing an insulating layer; forming, in said insulating layer, a trench having a depth that is greater than its length, and having sidewalls and a bottom surface; and forming a fusible link across said layer and trench and conformal therewith, said link having a break region of minimum thickness and width at an intersection of said sidewall and said bottom surface.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said fusible link is formed by depositing metal over said insulating layer and trench.
Claim 4
Dependent Claim
21 words
The method of claim 2 wherein selected regions of said deposited metal are etched to define the width of said link.
Claim 5
Dependent Claim
10 words
The method of claim 3 wherein said metal is aluminum.
Claim 6
Dependent Claim
12 words
The method of claim 4 wherein said aluminum is deposited by sputtering.
Claim 7
Dependent Claim
98 words
In a semiconductor, a fusible aluminum link having a break region, said break region covering the intersection of two flat surfaces inside a trench, and the thickness of said break region is less than the thickness of the remainder of said link, wherein said link has a necked down region having a width which is less than the width of the rest of the link, said break region is included in said necked down region, and said necked down region extends across said trench so that it covers a sidewall only at a first end of said trench.
Claim 8
Dependent Claim
98 words
In a semiconductor, a fusible aluminum link having a break region, said break region covering the intersection of two flat surfaces inside a trench, and the thickness of said break region is less than the thickness of the remainder of said link, wherein said link has a necked down region having a width which is less than the width of the rest of the link, said break region is included in said necked down region, and said necked down region extends across said trench so that it covers a sidewall only at a first end of said trench.
Claim 9
Dependent Claim
18 words
The fusible link of claim 6 wherein said link has a break region only at said first end.
Claim 10
Dependent Claim
41 words
In a semiconductor, a fusible metal link, said link having a thickness profile resulting from the deposition of metal onto an insulator and onto sidewalls and bottom of a trench formed therein, the trench having a depth greater than its length.
Claim 11
Dependent Claim
41 words
In a semiconductor, a fusible metal link, said link having a thickness profile resulting from the deposition of metal onto an insulator and onto sidewalls and bottom of a trench formed therein, the trench having a depth greater than its length.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-29 | 2001-03-31 | 2001-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-29 | 2005-03-31 | 2005-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-29 | 2009-03-31 | 2009-09-30 | $7700.00 | Window Closed / Lapsed |