EP0241046A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having fuse-type memory element
Assignee: NEC Corp
•
Filing: 1987-04-10
•
Granted: —
•
Expires: 2007-04-10
Abstract
Abstract A semiconductor device including a fuse-type memory element is disclosed. This device comprises a semi-conductor substrate, a field insulating layer on the substrate in which a hollow or trench is formed, and a fuse formed on the field insulating layer so as to run across the hollow or trench. The fuse is broken down on the edge of the hollow so that the broken point of the fuse may be predetermined.
Inventors
- 👤 Noboru Satoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 09:15
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10D; H10D84/00; H10D84/80; H10D84/811; H10D84/817
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
40 words
A semiconductor device comprising a semiconductor substrate, an insulating layer formed on said semiconductor substrate, and a fuse formed on said insulating layer, characterized in that a hollow is formed in said insulating layer and said fuse crosses said hollow.
Claim 2
Dependent Claim
40 words
A semiconductor device comprising a semiconductor substrate, an insulating layer formed on said semiconductor substrate, and a fuse formed on said insulating layer, characterized in that a hollow is formed in said insulating layer and said fuse crosses said hollow.
Claim 3
Dependent Claim
48 words
A semiconductor device comprising a semiconductor substrate, an insulating layer covering said semiconductor substrate, a trench formed in said insulating layer, a conductive film operating as a fuse formed on said insulating layer so as to cross said trench, and a reflowable glass layer covering said conductive film.
Claim 4
Dependent Claim
48 words
A semiconductor device comprising a semiconductor substrate, an insulating layer covering said semiconductor substrate, a trench formed in said insulating layer, a conductive film operating as a fuse formed on said insulating layer so as to cross said trench, and a reflowable glass layer covering said conductive film.
Claim 5
Dependent Claim
16 words
The device as claimed in Claim 2, wherein said conductive film is made of polycrystalline silicon.
Claim 6
Dependent Claim
14 words
The device as claimed in Claim 2, wherein said reflowable glass is borophosphosilicate glass.
Claim 7
Dependent Claim
69 words
A semiconductor device comprising a semiconductor substrate, a transistor having a region formed in said semiconductor substrate, a thick field insulating layer formed on a field region of said semiconductor substrate, a hollow formed in said thick field insulating layer, a fuse formed on a surface of said thick field insulating film and crossing said hollow, and an interconnection line connecting said region of said transistor to said fuse.
Claim 8
Dependent Claim
69 words
A semiconductor device comprising a semiconductor substrate, a transistor having a region formed in said semiconductor substrate, a thick field insulating layer formed on a field region of said semiconductor substrate, a hollow formed in said thick field insulating layer, a fuse formed on a surface of said thick field insulating film and crossing said hollow, and an interconnection line connecting said region of said transistor to said fuse.
Claim 9
Dependent Claim
16 words
The device as claimed in Claim 5, further comprising a borophosphosilicate glass layer covering said fuse.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.