Abstract A method for forming metal contacts in an integrated circuit, comprises the steps of: forming a first insulating layer on a silicon substrate; forming and patterning a first metal layer on the first insulating layer; forming and patterning a photoresist layer on the first insulating layer and the first metal pattern such that portions of the first insulating layer and first metal pattern are partially exposed; etching the exposed portion of the first metal pattern using the photoresist pattern to form a fine metal pattern; removing the photoresist pattern; depositing a second insulating layer on the overall surface of the structure; removing the second insulating layer to a depth until the fine metal pattern is exposed; coating a third photoresist layer on a surface of the second insulating layer and a surface of the fine metal pattern; patterning the third photoresist layer such that the surface of the fine metal pattern and portions of the surface of the second insulating layer adjacent to and on both sides of the fine metal pattern are covered; etching the second insulating layer using the third photoresist pattern to form spaces in the second insulating layer; removing the third photoresist pattern; forming a second metal layer to fill the spaces in the second insulating layer; and removing the second metal layers until a top surface of the second insulating layer is exposed to thereby form metal contacts.
The method for forming metal contacts in an integrated circuit, comprising the steps of: (a) providing a silicon substrate; (b) forming a first insulating layer on said substrate; (c) forming and patterning a first metal layer into a first metal pattern on said first insulating layer; (d) forming and patterning a photoresist layer on said first insulating layer and said first metal pattern such that a portion of said first insulating layer and a portion of the first metal pattern are partially exposed; (e) etching the exposed portion of the first metal pattern using the photoresist pattern to thereby form a fine metal pattern; (f) removing the photoresist pattern; (g) depositing a second insulating layer on the overall surface of the structure having the fine metal pattern disposed on the insulating layer; (h) removing the second insulating layer to a depth until the fine metal pattern is exposed; (i) coating a third photoresist layer on a surface of the second insulating layer and a surface of the fine metal pattern; (j) patterning the third photoresist layer such that the surface of the fine metal pattern and portions of the surface of the second insulating layer adjacent to and on both sides of the fine metal pattern are covered; (k) etching the second insulating layer using the third photoresist pattern to form spaces in the second insulating layer; (l) removing the third photoresist pattern; (m) forming a second metal layer to fill the spaces in the second insulating layer; and (n) removing the second metal layers until a top surface of the second insulating layer is exposed to thereby form metal contacts.
Claim 2
Independent Claim
271 words
The method for forming metal contacts in an integrated circuit, comprising the steps of: (a) providing a silicon substrate; (b) forming a first insulating layer on said substrate; (c) forming and patterning a first metal layer into a first metal pattern on said first insulating layer; (d) forming and patterning a photoresist layer on said first insulating layer and said first metal pattern such that a portion of said first insulating layer and a portion of the first metal pattern are partially exposed; (e) etching the exposed portion of the first metal pattern using the photoresist pattern to thereby form a fine metal pattern; (f) removing the photoresist pattern; (g) depositing a second insulating layer on the overall surface of the structure having the fine metal pattern disposed on the insulating layer; (h) removing the second insulating layer to a depth until the fine metal pattern is exposed; (i) coating a third photoresist layer on a surface of the second insulating layer and a surface of the fine metal pattern; (j) patterning the third photoresist layer such that the surface of the fine metal pattern and portions of the surface of the second insulating layer adjacent to and on both sides of the fine metal pattern are covered; (k) etching the second insulating layer using the third photoresist pattern to form spaces in the second insulating layer; (l) removing the third photoresist pattern; (m) forming a second metal layer to fill the spaces in the second insulating layer; and (n) removing the second metal layers until a top surface of the second insulating layer is exposed to thereby form metal contacts.
Claim 3
Dependent Claim
25 words
The method of claim 1, wherein said fine metal pattern is about 1000 Å to about 5000 Å smaller in width than the metal contact.
Claim 4
Dependent Claim
28 words
The method of claim 1, wherein said second insulating layer is removed by a plasma blanket etching method to the depth until the fine metal pattern is exposed.
Claim 5
Dependent Claim
28 words
The method of claim 1, wherein said second insulating layer is removed by a chemical mechanical polishing method to the depth until the fine metal contact is exposed.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein the second metal layer is removed by a plasma etching method.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein the second metal layer is removed by a chemical mechanical polishing method.
Claim 8
Dependent Claim
22 words
The method of claim 1 wherein the second insulating layer is a material having different etching rate from the first insulating layer.