Patent US2795915A successfully refreshed from Google Patents.
Patent US5668055A successfully refreshed from Google Patents.
US5668055A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of filling of contact openings and vias by self-extrusion of overlying compressively stressed matal layer
Assignee: Applied Materials Inc
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Filing: 1995-05-05
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Granted: 1997-09-16
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Expires: 2015-05-05
Abstract
Abstract A process and resulting structure are described for using a metal layer formed over an insulating layer as both the filler material to fill openings in the insulating layer and as the patterned metal interconnect or wiring harness on the surface of the insulating layer. The process includes the steps of forming a compressively stressed metal layer over an insulating layer having previously formed openings therethrough to the material under the insulating layer; forming a high tensile strength cap layer of material over the compressively stressed metal layer; and then heating the structure to a temperature sufficient to cause the compressively stressed metal layer to extrude down into the openings in the underlying insulating layer. The overlying cap layer has sufficient tensile strength to prevent or inhibit the compressive stressed metal layer from extruding upwardly to form hillocks which would need to be removed, i.e., by planarization. The temperature to which the compressively stressed metal layer is subsequently heated to cause it to extrude should be less than the melting point of the compressively stressed metal layer.
Inventors
- 👤 Zheng Xu
- 👤 Tse-Yong Yao
- 👤 Hoa Kieu
- 👤 Julio Aranovich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/059; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
179 words
A process for filling openings in an insulating layer on an integrated circuit structure with metal to provide an electrical connection between one or more structures beneath the insulating layer and one or more contacts above the insulating layer which comprises: (a) forming over an integrated circuit structure a layer of insulating material having one or more openings therein extending from an upper surface of said insulating layer to said integrated circuit structure underlying said insulating layer; (b) forming over said insulating layer and over the top of said one or more openings therein a compressively stressed metal layer; (c) then forming, over said compressively stressed metal layer previously formed, a capping layer of high tensile strength material whereby compressive stress is formed in said compressively stressed metal layer prior to forming said capping layer; (d) then heating said structure to a temperature which will permit said compressively stressed metal layer to extrude into said one or more openings to completely fill said one or more openings in said insulating layer with metal from said compressively layer metal layer.
Claim 2
Dependent Claim
179 words
A process for filling openings in an insulating layer on an integrated circuit structure with metal to provide an electrical connection between one or more structures beneath the insulating layer and one or more contacts above the insulating layer which comprises: (a) forming over an integrated circuit structure a layer of insulating material having one or more openings therein extending from an upper surface of said insulating layer to said integrated circuit structure underlying said insulating layer; (b) forming over said insulating layer and over the top of said one or more openings therein a compressively stressed metal layer; (c) then forming, over said compressively stressed metal layer previously formed, a capping layer of high tensile strength material whereby compressive stress is formed in said compressively stressed metal layer prior to forming said capping layer; (d) then heating said structure to a temperature which will permit said compressively stressed metal layer to extrude into said one or more openings to completely fill said one or more openings in said insulating layer with metal from said compressively layer metal layer.
Claim 3
Dependent Claim
55 words
The process of claim 1 including the additional step of forming a barrier layer over said insulating layer, over the sidewalls of said one or more openings therein, and over the exposed surface of said underlying integrated circuit structure prior to said step of forming said layer of compressively stressed metal over said insulating layer.
Claim 4
Dependent Claim
31 words
The process of claim 1 wherein the compressive stress of said metal layer is at a level which will permit extrusion of said metal into said openings during said heating step.
Claim 5
Dependent Claim
32 words
The process of claim 1 wherein the compressive stress of said metal layer is less than that amount of stress which would cause other layers of said integrated circuit structure to crack.
Claim 6
Dependent Claim
15 words
The process of claim 1 wherein said compressively stressed metal layer comprises an aluminum material.
Claim 7
Dependent Claim
25 words
The process of claim 5 wherein the compressive stress of said metal layer ranges from about 10 8 to about 10 10 dynes/cm 2 .
Claim 8
Dependent Claim
31 words
The process of claim 1 wherein said capping layer has a tensile strength which will prevent said compressively stressed metal layer from extruding upwardly to form hillocks during said heating step.
Claim 9
Dependent Claim
21 words
The process of claim 1 wherein said capping layer has a tensile stress exceeding the compressive stress of said metal layer.
Claim 10
Dependent Claim
28 words
The process of claim 1 wherein said structure is heated, during said heating step, to a temperature less than the melting point of said compressively stressed metal layer.
Claim 11
Dependent Claim
43 words
The process of claim 1 wherein said compressively stressed metal layer comprises an aluminum material and said heating step further comprises heating said structure to a temperature of at least about 400° C. to cause said aluminum material to extrude into said openings.
Claim 12
Dependent Claim
238 words
A process for filling openings in an insulating layer on an integrated circuit structure with metal to provide an electrical connection between one or more structures beneath the insulating layer and one or more metal contacts above the insulating layer which comprises: (a) forming over an integrated circuit structure a layer of insulating material having one or more openings therein extending from an upper surface of said insulating layer to said integrated circuit structure underlying said insulating layer; (b) forming a barrier layer over said insulating layer and exposed surfaces within said one or more openings; (c) forming over said barrier layer and over the top of said one or more openings therein a metal layer formed with a compressive stress level which will permit said metal layer to extrude into said openings when said metal layer is subsequently heated; (d) then forming, over said metal layer, previously formed with a compressive stress level, a capping layer of a tensile stressed material having a tensile strength which will prevent said metal layer from extruding upwardly when said metal layer is subsequently heated whereby compressive stress is formed in said metal layer prior to forming said capping layer; and (e) then heating said structure to a temperature which will permit said metal layer to extrude into said one or more openings to completely fill said one or more openings in said insulating layer with metal from said metal layer.
Claim 13
Dependent Claim
238 words
A process for filling openings in an insulating layer on an integrated circuit structure with metal to provide an electrical connection between one or more structures beneath the insulating layer and one or more metal contacts above the insulating layer which comprises: (a) forming over an integrated circuit structure a layer of insulating material having one or more openings therein extending from an upper surface of said insulating layer to said integrated circuit structure underlying said insulating layer; (b) forming a barrier layer over said insulating layer and exposed surfaces within said one or more openings; (c) forming over said barrier layer and over the top of said one or more openings therein a metal layer formed with a compressive stress level which will permit said metal layer to extrude into said openings when said metal layer is subsequently heated; (d) then forming, over said metal layer, previously formed with a compressive stress level, a capping layer of a tensile stressed material having a tensile strength which will prevent said metal layer from extruding upwardly when said metal layer is subsequently heated whereby compressive stress is formed in said metal layer prior to forming said capping layer; and (e) then heating said structure to a temperature which will permit said metal layer to extrude into said one or more openings to completely fill said one or more openings in said insulating layer with metal from said metal layer.
Claim 14
Dependent Claim
21 words
The process of claim 11 wherein said capping layer has a tensile strength exceeding the compressive stress of said metal layer.
Claim 15
Dependent Claim
21 words
The process of claim 11 wherein said step of forming said barrier layer further comprises forming a barrier layer of TiN.
Claim 16
Dependent Claim
28 words
The process of claim 11 wherein said barrier layer has a thickness which will chemically isolate said metal layer from said integrated circuit structure beneath said insulating layer.
Claim 17
Dependent Claim
31 words
The process of claim 11 wherein the compressive stress of said metal layer is at a level which will permit extrusion of said metal into said openings during said heating step.
Claim 18
Dependent Claim
32 words
The process of claim 15 wherein the compressive stress of said metal layer is less than that amount of stress which would cause other layers of said integrated circuit structure to crack.
Claim 19
Dependent Claim
13 words
The process of claim 16 wherein said compressively stressed metal layer comprises aluminum.
Claim 20
Dependent Claim
25 words
The process of claim 17 wherein the compressive stress of said aluminum layer ranges from about 10 8 to about 10 10 dynes/cm 2 .
Claim 21
Dependent Claim
28 words
The process of claim 11 wherein said structure is heated, during said heating step, to a temperature less than the melting point of said compressively stressed metal layer.
Claim 22
Dependent Claim
43 words
The process of claim 11 wherein said compressively stressed metal layer comprises an aluminum material and said heating step further comprises heating said structure to a temperature of at least about 400° C. to cause said aluminum material to extrude into said openings.
Claim 23
Dependent Claim
161 words
In the formation of integrated circuit structures, a process for filling with metal openings in an insulating layer formed over underlying integrated circuit structure using a metal layer initially formed over said insulation layer which comprises: (a) providing an insulating layer having one or more openings therethrough; (b) forming a compressively stressed metal layer over said insulation layer having a thickness which will cover said one or more openings therein; (c) then forming a capping layer over said compressively stressed metal layer, previously formed, said capping layer having a tensile strength level which will resist upward movement of said compressively stressed metal layer during subsequent heating of the structure whereby compressive stress is formed in said compressively stressed metal layer prior to forming said capping layer; and (d) subsequently heating said structure to a temperature which will cause said compressively stressed metal layer to extrude into and fill said one or more openings without, however, melting said compressively stressed metal layer.
Claim 24
Dependent Claim
161 words
In the formation of integrated circuit structures, a process for filling with metal openings in an insulating layer formed over underlying integrated circuit structure using a metal layer initially formed over said insulation layer which comprises: (a) providing an insulating layer having one or more openings therethrough; (b) forming a compressively stressed metal layer over said insulation layer having a thickness which will cover said one or more openings therein; (c) then forming a capping layer over said compressively stressed metal layer, previously formed, said capping layer having a tensile strength level which will resist upward movement of said compressively stressed metal layer during subsequent heating of the structure whereby compressive stress is formed in said compressively stressed metal layer prior to forming said capping layer; and (d) subsequently heating said structure to a temperature which will cause said compressively stressed metal layer to extrude into and fill said one or more openings without, however, melting said compressively stressed metal layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-15 | 2001-03-17 | 2001-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-15 | 2005-03-17 | 2005-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-15 | 2009-03-17 | 2009-09-16 | $7700.00 | Window Closed / Lapsed |