US5658830A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating interconnecting lines and contacts using conformal deposition
Assignee: Vanguard International Semiconductor Corp
•
Filing: 1996-07-12
•
Granted: 1997-08-19
•
Expires: 2016-07-12
Abstract
Abstract The present invention is a method for fabricating interconnecting lines and contacts using conformal deposition. This invention applies patterning trenches simultaneously for interconnecting lines and contact holes and forming spacers technologies to make fully filled interconnecting line and contact holes. Then, utilizing the conformal deposition and blanket etch-back etching method, the present invention can fabricating interconnecting lines and contacts simultaneously.
Inventors
- 👤 Erik S. Jeng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/063; H10W20/0636
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
229 words
A method for fabricating interconnecting lines and contacts in semiconductive device, the method comprising: forming a dielectric layer over a conductive area; forming a first conductive layer on the dielectric layer; forming a first trench and a second trench in the dielectric layer and into the first conductive layer, wherein the first trench is used in forming a contact hole to the conductive area and the second trench is used in forming an interconnect line; depositing a second conductive layer conformally over the first conductive layer and in the first trench, wherein the first trench is filled by the second conductive layer to a thickness greater than a thickness of the second conductive layer located over a portion of a bottom surface of the first trench; forming a spacer on a sidewall of the first trench from a portion of the second conductive layer conformally deposited in the first trench, wherein the portion of a bottom surface of the first trench is exposed; forming a contact hole in the dielectric layer by etching using the spacer as a mask; forming a third conductive layer on the second conductive layer and in the contact hole, wherein the third conductive area contacts the conductive area; and removing portions of the first, second and third conductive layer so that a top surface of an upper portion of the dielectric layer is exposed.
Claim 2
Independent Claim
229 words
A method for fabricating interconnecting lines and contacts in semiconductive device, the method comprising: forming a dielectric layer over a conductive area; forming a first conductive layer on the dielectric layer; forming a first trench and a second trench in the dielectric layer and into the first conductive layer, wherein the first trench is used in forming a contact hole to the conductive area and the second trench is used in forming an interconnect line; depositing a second conductive layer conformally over the first conductive layer and in the first trench, wherein the first trench is filled by the second conductive layer to a thickness greater than a thickness of the second conductive layer located over a portion of a bottom surface of the first trench; forming a spacer on a sidewall of the first trench from a portion of the second conductive layer conformally deposited in the first trench, wherein the portion of a bottom surface of the first trench is exposed; forming a contact hole in the dielectric layer by etching using the spacer as a mask; forming a third conductive layer on the second conductive layer and in the contact hole, wherein the third conductive area contacts the conductive area; and removing portions of the first, second and third conductive layer so that a top surface of an upper portion of the dielectric layer is exposed.
Claim 3
Dependent Claim
14 words
The method according to claim 1, wherein said dielectric layer comprises an oxide layer.
Claim 4
Dependent Claim
16 words
The method according to claim 1 wherein the dielectric layer comprises a borophosphosilicate glass (BPSG) layer.
Claim 5
Dependent Claim
21 words
The method according to claim 1, wherein forming the first conductive layer comprises depositing conductive material using chemical vapor deposit method.
Claim 6
Dependent Claim
15 words
The method according to claim 1, wherein said first conductive layer comprises a metal layer.
Claim 7
Dependent Claim
15 words
The method according to claim 1, wherein said first conductive layer comprises a polysilicon layer.
Claim 8
Dependent Claim
15 words
The method according to claim 1, wherein said second conductive layer comprises a metal layer.
Claim 9
Dependent Claim
15 words
The method according to claim 1, wherein said second conductive layer comprises a polysilicon layer.
Claim 10
Dependent Claim
15 words
The method according to claim 1, wherein said third conductive layer comprises a metal layer.
Claim 11
Dependent Claim
15 words
The method according to claim 1, wherein said third conductive layer comprises a polysilicon layer.
Claim 12
Dependent Claim
50 words
The method according to claim 1, wherein forming the first and second trenches comprises: depositing and etching a photoresist on said first conductive layer, wherein portions of the photoresist serve as a mask; and etching said first conductive layer and said dielectric layer which are not cover by the mask.
Claim 13
Dependent Claim
18 words
The method according to claim 1, wherein the first trench has a greater width than the second trench.
Claim 14
Dependent Claim
28 words
The method according to claim 12, wherein the width of the second trench is about 0.4 μm and the width of the first trench is about 0.7 μm.
Claim 15
Dependent Claim
23 words
The method according to claim 1, wherein said forming of said second conductive layer comprises forming said second conductive layer by conformal deposition.
Claim 16
Dependent Claim
19 words
The method according to claim 1, wherein said forming of said spacer comprises anisotropic etching said second conductive layer.
Claim 17
Dependent Claim
42 words
The method according to claim 1, wherein forming a contact hole comprises etching an exposed portion of the dielectric layer in the first trench until the conductive area is exposed, said first conductive layer and said spacer serving as an etch mask.
Claim 18
Dependent Claim
31 words
The method according to claim 1, wherein the etching comprises using a selective etch process with a selectivity ratio of about 5:1 for the dielectric layer to the first conductive layer.
Claim 19
Dependent Claim
23 words
The method according to claim 1, wherein said forming of said third conductive layer comprises forming said third conductive layer by conformal deposition.
Claim 20
Dependent Claim
22 words
The method according to claim 1, wherein said removing of the portion of the third conductive layer comprises a blanket etch-back process.
Claim 21
Dependent Claim
34 words
The method according to claim 1, wherein said removing of the portion of the first,second,and third conductive layer comprises removing the portion of the first, second, and third conductive layer by chemical mechanical polishing.
Claim 22
Dependent Claim
18 words
The method according to claim 19, wherein the end-point of the blanket etchback process is said dielectric layer.
Claim 23
Independent Claim
177 words
A method for fabricating contacts in semiconductive device, the method comprising: forming a dielectric layer over a conductive area; forming a first conductive layer on the dielectric layer; forming a first trench and in the dielectric layer and through the first conductive layer, wherein the first trench is used in forming a contact hole to the conductive area; depositing a second conductive layer conformally over the first conductive layer and in the first trench; forming a spacer on a sidewall of the first trench from a portion of the second conductive layer conformally deposited in the first trench, wherein a portion of a bottom surface of the first trench is exposed; forming a contact hole in the dielectric layer by etching using the spacer as a mask; forming a third conductive layer on the second conductive layer and in the contact hole, wherein the third conductive area contacts the conductive area; and removing portions of the first, second and third conductive layer so that a top surface of an upper portion of the dielectric layer is exposed.
Claim 24
Independent Claim
177 words
A method for fabricating contacts in semiconductive device, the method comprising: forming a dielectric layer over a conductive area; forming a first conductive layer on the dielectric layer; forming a first trench and in the dielectric layer and through the first conductive layer, wherein the first trench is used in forming a contact hole to the conductive area; depositing a second conductive layer conformally over the first conductive layer and in the first trench; forming a spacer on a sidewall of the first trench from a portion of the second conductive layer conformally deposited in the first trench, wherein a portion of a bottom surface of the first trench is exposed; forming a contact hole in the dielectric layer by etching using the spacer as a mask; forming a third conductive layer on the second conductive layer and in the contact hole, wherein the third conductive area contacts the conductive area; and removing portions of the first, second and third conductive layer so that a top surface of an upper portion of the dielectric layer is exposed.
References Cited (Backward Citations)
US4936950A
Cited
US5200030A
Cited
US5266446A
Cited
US5536625A
Cited
US5316978A
Cited
US5474651A
Cited
US5498566A
Cited
US5460987A
Cited
US5484747A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-18 | 2001-02-17 | 2001-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-18 | 2005-02-17 | 2005-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-18 | 2009-02-17 | 2009-08-19 | $7700.00 | Window Closed / Lapsed |