US5200030A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a planarized metal layer for semiconductor device
Assignee: SK Hynix Inc
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Filing: 1991-10-23
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Granted: 1993-04-06
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Expires: 2011-10-23
Abstract
Abstract A method for manufacturing a planarized metal layer on a wafer of a semiconductor device by providing a wafer and sequentially depositing a conducting layer 1 and an insulating layer 2 on the wafer 10 is described. A contact hole is formed in a portion of the insulating layer 2 exposing a portion of the underlying conducting layer 1 and simultaneously forming a step difference. The resulting wafer 10 comprising the contact hole is placed into a first chamber and heated in order to degas the insulating layer 2 and a first metal layer 3 is deposited on the degassed insulating layer 2 and on the contact hole 5 to a thickness of about 10 to 50% of the desired predetermined final thickness. The resulting wafer comprising the first metal layer is placed into a second chamber and heated. A second metal layer 4 is then deposited on the first metal layer 3 to a thickness of about 50 to 90% of the desired predetermined final thickness to provide a planarized metal layer.
Inventors
- 👤 Gyung S. Cho
- 👤 Chul G. Ko
- 👤 Heon D. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:38
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W20/062
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
244 words
A method for manufacturing a planarized metal layer on a structure having a step difference in semiconductor device comprises: providing a wafer 10; sequentially depositing a conducting layer 1 and an insulating layer 2 on the wafer 10; forming a contact hole 5 by removing a portion of the insulating layer 2 to expose a portion of the underlying conducting layer 1, thereby producing structure 7 having a step difference; introducing the resulting wafer 10 into a first chamber for degassing the insulating layer 2 at a predetermined temperature for a predetermined period; depositing a first metal layer 3 on the entire surface of the resulting structure including the insulating layer 2 and the contact hole 5 to a 30% thickness relative to a predetermined thickness, which is to be finally deposited, at a predetermined temperature in the first chamber, thereby connecting the first metal layer 3 to the exposed portion of the conducting layer 1 through the contact hole 5; introducing the resulting structure including the first metal layer 3 deposited on the wafer 10 into a second chamber; and, depositing a second metal layer 4 on the first metal layer 3 to the remaining 70% thickness of the predetermined thickness to be finally deposited at a predetermined temperature in the second chamber, thereby forming a planarized metal layer 6 including the first and the second metal layer 3 and 4 on the structure 7 having the step difference of the wafer 10.
Claim 2
Independent Claim
244 words
A method for manufacturing a planarized metal layer on a structure having a step difference in semiconductor device comprises: providing a wafer 10; sequentially depositing a conducting layer 1 and an insulating layer 2 on the wafer 10; forming a contact hole 5 by removing a portion of the insulating layer 2 to expose a portion of the underlying conducting layer 1, thereby producing structure 7 having a step difference; introducing the resulting wafer 10 into a first chamber for degassing the insulating layer 2 at a predetermined temperature for a predetermined period; depositing a first metal layer 3 on the entire surface of the resulting structure including the insulating layer 2 and the contact hole 5 to a 30% thickness relative to a predetermined thickness, which is to be finally deposited, at a predetermined temperature in the first chamber, thereby connecting the first metal layer 3 to the exposed portion of the conducting layer 1 through the contact hole 5; introducing the resulting structure including the first metal layer 3 deposited on the wafer 10 into a second chamber; and, depositing a second metal layer 4 on the first metal layer 3 to the remaining 70% thickness of the predetermined thickness to be finally deposited at a predetermined temperature in the second chamber, thereby forming a planarized metal layer 6 including the first and the second metal layer 3 and 4 on the structure 7 having the step difference of the wafer 10.
Claim 3
Dependent Claim
12 words
The method of claim 1, wherein the insulating layer 2 is oxide.
Claim 4
Dependent Claim
20 words
The method of claim 1, wherein the first and second metal layer 3 and 4 are aluminum or aluminum Alloy.
Claim 5
Dependent Claim
43 words
The method of claim 1, wherein the first and second chamber maintain conditions that the vacuum of the chambers is below 5.0×10 -8 Torr, the power thereof is below 5 KW and the Argon pressure required for the chambers is 7 m Torr.
Claim 6
Dependent Claim
30 words
The method of claim 1, wherein the insulating layer 2 is degassed at a temperature of above 400 degree Celsius for a period of 2 minutes in the first chamber.
Claim 7
Dependent Claim
25 words
The method of claim 1, wherein the first metal layer 3 is deposited at a temperature of below 150 degree Celsius in the first chamber.
Claim 8
Dependent Claim
25 words
The method of claim 1, wherein the second metal layer 4 is deposited at a temperature of above 400 degree Celsius at the second chamber.
Claim 9
Independent Claim
260 words
A method for manufacturing a planarized metal layer on a structure having a step difference in semiconductor device comprises: providing an wafer 10; sequentially depositing a conducting layer 1 and an insulating layer 2 on the wafer 10; forming a contact hole 5 by removing a portion of the insulating layer 2 to expose a portion of the underlying conducting layer 1, thereby producing a structure having a difference on the wafer 10; introducing the resulting wafer 10 into a first chamber for degassing the insulating layer 2 at a temperature of above 400 degree Celsius for a period of 2 minutes; depositing a first metal layer 3 on the entire surface of the resulting structure including the insulating layer 2 and the contact hole 5 to a 30% thickness relative to a predetermined thickness, which is to be finally deposited, at a temperature of below 150 degree Celsius in the first chamber, thereby connecting the first metal layer 3 to the exposed portion of the conducting layer through the contact hole 5; introducing the resulting structure including the first metal layer 3 deposited on the wafer 10 into a second chamber; and, depositing a second metal layer 4 on the first metal layer 3 to the remaining 70% thickness of the predetermined thickness to be finally deposited at a temperature of above 400 degree Celsius in the second chamber, thereby forming a planarized metal layer 6 including the first and the second metal layer 3 and 4 on the structure 7 having the step difference of the wafer 10.
Claim 10
Independent Claim
260 words
A method for manufacturing a planarized metal layer on a structure having a step difference in semiconductor device comprises: providing an wafer 10; sequentially depositing a conducting layer 1 and an insulating layer 2 on the wafer 10; forming a contact hole 5 by removing a portion of the insulating layer 2 to expose a portion of the underlying conducting layer 1, thereby producing a structure having a difference on the wafer 10; introducing the resulting wafer 10 into a first chamber for degassing the insulating layer 2 at a temperature of above 400 degree Celsius for a period of 2 minutes; depositing a first metal layer 3 on the entire surface of the resulting structure including the insulating layer 2 and the contact hole 5 to a 30% thickness relative to a predetermined thickness, which is to be finally deposited, at a temperature of below 150 degree Celsius in the first chamber, thereby connecting the first metal layer 3 to the exposed portion of the conducting layer through the contact hole 5; introducing the resulting structure including the first metal layer 3 deposited on the wafer 10 into a second chamber; and, depositing a second metal layer 4 on the first metal layer 3 to the remaining 70% thickness of the predetermined thickness to be finally deposited at a temperature of above 400 degree Celsius in the second chamber, thereby forming a planarized metal layer 6 including the first and the second metal layer 3 and 4 on the structure 7 having the step difference of the wafer 10.
Claim 11
Dependent Claim
12 words
The method of claim 8, wherein the insulating layer 2 is oxide.
Claim 12
Dependent Claim
20 words
The method of claim 8, wherein the first and second metal layer 3 and 4 are aluminum or aluminum alloy.
Claim 13
Dependent Claim
43 words
The method of claim 8, wherein the first and second chamber maintain conditions that the vacuum of the chambers is below 5.0×10 -8 Torr, the power thereof is below 5 KW and the Argon pressure required for the chambers is 7 m Torr.
Claim 14
Independent Claim
177 words
A method for manufacturing a planarized metal layer on a wafer of a semiconductor device having a step difference, said method comprises: providing a wafer; sequentially depositing a conducting layer 1 and an insulating layer 2 on the wafer 10; forming a contact hole in a portion of the insulating layer 2 exposing a portion of the underlying conducting layer 1 and simultaneously forming a step difference; introducing the resulting wafer 10 comprising the contact hole into a first chamber and heating the wafer in order to degas the insulating layer 2 and depositing a first metal layer 3 on the degassed insulating layer 2 and on the contact hole 5 to a thickness of about 10 to 50% of the desired predetermined final thickness; and introducing the resulting wafer comprising the first metal layer into a second chamber and heating the wafer 10 and depositing a second metal layer 4 on the first metal layer 3 to a thickness of about 50 to 90% of the desired predetermined final thickness to provide a planarized metal layer.
Claim 15
Independent Claim
177 words
A method for manufacturing a planarized metal layer on a wafer of a semiconductor device having a step difference, said method comprises: providing a wafer; sequentially depositing a conducting layer 1 and an insulating layer 2 on the wafer 10; forming a contact hole in a portion of the insulating layer 2 exposing a portion of the underlying conducting layer 1 and simultaneously forming a step difference; introducing the resulting wafer 10 comprising the contact hole into a first chamber and heating the wafer in order to degas the insulating layer 2 and depositing a first metal layer 3 on the degassed insulating layer 2 and on the contact hole 5 to a thickness of about 10 to 50% of the desired predetermined final thickness; and introducing the resulting wafer comprising the first metal layer into a second chamber and heating the wafer 10 and depositing a second metal layer 4 on the first metal layer 3 to a thickness of about 50 to 90% of the desired predetermined final thickness to provide a planarized metal layer.
Claim 16
Dependent Claim
26 words
The method of claim 12 wherein the contact hole is formed by dry-etching a portion of the insulating layer 2 by a contact mask patterning process.
Claim 17
Dependent Claim
30 words
The method of claim 12 wherein the insulating layer 2 is degassed in the first chamber at a temperature of above 400 degree Celsius for a period of two minutes.
Claim 18
Dependent Claim
34 words
The method of claim 12 wherein the first metal layer is deposited on the insulating layer 2 at a temperature of below 150 degrees Celsius to ensure the continuity of the first metal layer.
Claim 19
Dependent Claim
31 words
The method of claim 15 wherein the degassed insulating layer is allowed to cool to room temperature before depositing the first metal layer on the resulting wafer comprising the contact hole.
Claim 20
Dependent Claim
39 words
The method of claim 12 wherein the resulting wafer comprising the first metal layer deposited on the insulating layer is heated in the second chamber to a temperature of above 400 degrees Celsius for a period of 1 minute.
Claim 21
Dependent Claim
27 words
The method of claim 12 wherein the second metal layer 4 is deposited on the first metal layer 3 in a temperature of above 400 degrees Celsius.
Claim 22
Dependent Claim
26 words
The method of claim 12 wherein the first and second metal layer 3 and 4 are selected from the group consisting of aluminum or aluminum alloy.
Claim 23
Dependent Claim
69 words
The method of claim 12 wherein the first metal layer is deposited on the degassed insulating layer 2 and on the contact hole 5 to a thickness of about 30% of the desired predetermined final thickness of the metal layer; and the second metal layer is deposited on the first metal layer 3 to a thickness of about 70% of the desired predetermined final thickness of the metal layer.
Claim 24
Independent Claim
243 words
A method for manufacturing a planarized metal layer on a wafer of a semiconductor device having a step difference, said method comprises: providing a wafer of the semiconductor device; sequentially depositing a conducting layer 1 and an insulating layer 2 on the wafer 10; forming a contact hole in a portion of the insulating layer 2 by dry-etching a portion of the insulating layer 2 by a contact mask patterning process to expose a portion of the underlying conducting layer 1 and simultaneously form a step difference; introducing the resulting wafer 10 comprising the contact hole into a first chamber and heating the wafer at a temperature of above 400 degree Celsius for a period of two minutes to degas the insulating layer 2; allowing the degassed insulating layer 2 to cool to room temperature before depositing a first metal layer on the resulting wafer comprising the contact hole; depositing the first metal layer 3 on the degassed insulating layer 2 and on the contact hole 5 to an extent of about 30% of the desired predetermined final thickness at room temperature; and introducing the resulting wafer comprising the first metal layer into a second chamber and heating to a temperature of above 400 degrees Celsius for a period of 1 minute and depositing a second metal layer 4 on the first metal layer 3 to a thickness of about 70% of the desired predetermined final thickness to provide a planarized metal layer.
Claim 25
Independent Claim
243 words
A method for manufacturing a planarized metal layer on a wafer of a semiconductor device having a step difference, said method comprises: providing a wafer of the semiconductor device; sequentially depositing a conducting layer 1 and an insulating layer 2 on the wafer 10; forming a contact hole in a portion of the insulating layer 2 by dry-etching a portion of the insulating layer 2 by a contact mask patterning process to expose a portion of the underlying conducting layer 1 and simultaneously form a step difference; introducing the resulting wafer 10 comprising the contact hole into a first chamber and heating the wafer at a temperature of above 400 degree Celsius for a period of two minutes to degas the insulating layer 2; allowing the degassed insulating layer 2 to cool to room temperature before depositing a first metal layer on the resulting wafer comprising the contact hole; depositing the first metal layer 3 on the degassed insulating layer 2 and on the contact hole 5 to an extent of about 30% of the desired predetermined final thickness at room temperature; and introducing the resulting wafer comprising the first metal layer into a second chamber and heating to a temperature of above 400 degrees Celsius for a period of 1 minute and depositing a second metal layer 4 on the first metal layer 3 to a thickness of about 70% of the desired predetermined final thickness to provide a planarized metal layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-05 | 1996-10-05 | 1997-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-05 | 2000-10-05 | 2001-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-05 | 2004-10-05 | 2005-04-06 | $7700.00 | Window Closed / Lapsed |