US5656555A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Modified hydrogen silsesquioxane spin-on glass
Assignee: Texas Instruments Inc
•
Filing: 1995-02-17
•
Granted: 1997-08-12
•
Expires: 2015-02-17
Abstract
Abstract A modified hydrogen silsesquioxane (HSQ) precursor is disclosed, along with methods for depositing such a precursor on a semiconductor substrate and a semiconductor device having a dielectric thin film deposited from such a precursor. The method comprises coating a semiconductor substrate 10, which typically comprises conductors 12, with a film of a modified HSQ film precursor. The HSQ film precursor comprises a hydrogen silsesquioxane resin and a modifying agent, preferably selected from the group consisting of alkyl alkoxysilanes, fluorinated alkyl alkoxysilanes, and combinations thereof. The method further comprises curing film 14, wherein the inclusion of the modifying agent inhibits oxidation and/or water absorption by the film during and/or after curing. It is believed that the modifying agent modifies film surface 16 to produce this effect. Films produced according to the present invention apparently have repeatable dielectric properties for drying and curing conditions which produced widely varying properties for unmodified films.
Inventors
- 👤 Chih-Chen Cho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6925; H10P14/65; H10P14/6516; H10P14/6529; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
95 words
A method of forming a thin film dielectric on a semiconductor substrate, said method comprising: (a) coating said substrate with a thin film of a modified HSQ film precursor, wherein said modified HSQ film precursor comprises a hydrogen silsesquioxane resin and a modifying agent selected from the group consisting of alkyl alkoxysilanes, fluorinated alkyl alkoxysilanes, and combinations thereof; and (b) curing said thin film at a temperature between 200° C. and 450° C.; whereby the inclusion of said modifying agent in said precursor at least partially inhibits oxidation and/or water absorption of said thin film.
Claim 2
Independent Claim
95 words
A method of forming a thin film dielectric on a semiconductor substrate, said method comprising: (a) coating said substrate with a thin film of a modified HSQ film precursor, wherein said modified HSQ film precursor comprises a hydrogen silsesquioxane resin and a modifying agent selected from the group consisting of alkyl alkoxysilanes, fluorinated alkyl alkoxysilanes, and combinations thereof; and (b) curing said thin film at a temperature between 200° C. and 450° C.; whereby the inclusion of said modifying agent in said precursor at least partially inhibits oxidation and/or water absorption of said thin film.
Claim 3
Dependent Claim
28 words
The method of claim 1, wherein said modified HSQ film precursor comprises a hydrogen silsesquioxane resin and a modifying agent in a volume ratio between 40:1 and 2:8.
Claim 4
Dependent Claim
21 words
The method of claim 1, wherein said curing step is performed in an atmosphere comprising less than 1 mole percent oxygen.
Claim 5
Dependent Claim
15 words
The method of claim 1, wherein said curing step is performed in a reducing atmosphere.
Claim 6
Dependent Claim
23 words
The method of claim 4, wherein said reducing atmosphere is approximately 10 volume percent H 2 and 90 volume percent N 2 .
Claim 7
Dependent Claim
33 words
The method of claim 1, further comprising prior to step b), drying said thin film at a temperature of between 25° C. and 120° C. for a period of less than 10 minutes.
Claim 8
Dependent Claim
40 words
The method of claim 1, further comprising prior to step b), reflowing said thin film by holding said substrate at a temperature between 120° C. and 200° C. for a period of time sufficient to substantially planarize said thin film.
Claim 9
Dependent Claim
16 words
The method of claim 1, wherein said temperature during said curing step is approximately 400° C.
Claim 10
Dependent Claim
20 words
The method of claim 1, said curing step having a duration of between approximately 30 minutes and approximately 60 minutes.
Claim 11
Dependent Claim
12 words
The method of claim 1, wherein said modifying agent is methyl trimethoxysilane.
Claim 12
Dependent Claim
16 words
The method of claim 1, wherein said modified HSQ film precursor further comprises a non-modifying solvent.
Claim 13
Dependent Claim
13 words
The method of claim 11, wherein said non-modifying solvent is methyl isobutyl ketone.
Claim 14
Dependent Claim
15 words
The method of claim 1, wherein said coating step is performed by a spin-on technique.
Claim 15
Dependent Claim
19 words
The method of claim 13, wherein during said coating step, the temperature of said substrate is approximately 25° C.
Claim 16
Independent Claim
109 words
A method of forming a thin film dielectric on a semiconductor substrate, said method comprising: (a) supplying a modified HSQ film precursor, said modified HSQ film precursor comprising hydrogen silsesquioxane resin, a non-modifying solvent, and an alkyl alkoxysilane modifying agent; (b) spinning said film precursor onto said substrate to form said thin film; (c) evaporating said solvent from said thin film; and (d) curing said thin film in an atmosphere comprising less than 1 mole percent oxygen at a temperature of between 200° C. and 450° C.; whereby the inclusion of said modifying agent in said precursor at least partially inhibits oxidation and/or water absorption of said thin film.
Claim 17
Independent Claim
109 words
A method of forming a thin film dielectric on a semiconductor substrate, said method comprising: (a) supplying a modified HSQ film precursor, said modified HSQ film precursor comprising hydrogen silsesquioxane resin, a non-modifying solvent, and an alkyl alkoxysilane modifying agent; (b) spinning said film precursor onto said substrate to form said thin film; (c) evaporating said solvent from said thin film; and (d) curing said thin film in an atmosphere comprising less than 1 mole percent oxygen at a temperature of between 200° C. and 450° C.; whereby the inclusion of said modifying agent in said precursor at least partially inhibits oxidation and/or water absorption of said thin film.
References Cited (Backward Citations)
US4756977A
Cited
US4847162A
Cited
US5380567A
Cited
US5380555A
Cited
US5387480A
Cited
US5320868A
Cited
US5441765A
Cited
US5506177A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-11 | 2001-02-10 | 2001-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-11 | 2009-02-10 | 2009-08-12 | $7700.00 | Window Closed / Lapsed |