Abstract A semiconductor device memory array formed on a semiconductor substrate comprising a multiplicity of field effect transistor DRAM devices disposed in array is disclosed. Each of the DRAM devices is paired with a non-volatile EEPROM cell and the EEPROM cells are disposed in a shallow trench in the semiconductor substrate running between the DRAM devices such that each DRAM-EEPROM pair shares a common drain diffusion. The EEPROM cells are arranged in the trench such that there are discontinuous laterally disposed floating gate polysilicon electrodes and continuous horizontally disposed program and recall gate polysilicon electrodes. The floating gate is separated from the program and recall gates by a silicon rich nitride. The array of the invention provides high density shadow RAMs. Also disclosed are methods for the fabrication of devices of the invention.
A method for providing a polysilicon electrode in a trench having a bottom and two sidewalls, said polysilicon electrode being in the form of an inverted T, comprising: (a) depositing a first polysilicon layer in said trench, and then planarizing and etching back said first polysilicon layer to provide a base of said electrode, said base filling a lower portion of said trench; (b) providing an oxide layer on top of said base; (c) depositing silicon rich nitride on both sidewalls of said trench; (d) etching away an exposed center portion of said oxide layer on said base; and (e) depositing a second polysilicon layer on top of said base of said electrode.
Claim 2
Independent Claim
113 words
A method for providing a polysilicon electrode in a trench having a bottom and two sidewalls, said polysilicon electrode being in the form of an inverted T, comprising: (a) depositing a first polysilicon layer in said trench, and then planarizing and etching back said first polysilicon layer to provide a base of said electrode, said base filling a lower portion of said trench; (b) providing an oxide layer on top of said base; (c) depositing silicon rich nitride on both sidewalls of said trench; (d) etching away an exposed center portion of said oxide layer on said base; and (e) depositing a second polysilicon layer on top of said base of said electrode.